915 research outputs found
Development of a Reference Wafer for On-Wafer Testing of Extreme Impedance Devices
This paper describes the design, fabrication, and testing of an on-wafer substrate that has been developed specifically for measuring extreme impedance devices using an on-wafer probe station. Such devices include carbon nano-tubes (CNTs) and structures based on graphene which possess impedances in the κ Ω range and are generally realised on the nano-scale rather than the micro-scale that is used for conventional on-wafer measurement. These impedances are far removed from the conventional 50- reference impedance of the test equipment. The on-wafer substrate includes methods for transforming from the micro-scale towards the nano-scale and reference standards to enable calibrations for extreme impedance devices. The paper includes typical results obtained from the designed wafer
Информационный бюллетень. Белинка. Даты. События. Люди. Июнь. 2014
Mobile dating apps have become a popular means to meet potential partners.
Although several exist, one recent addition stands out amongst all others.
Tinder presents its users with pictures of people geographically nearby, whom
they can either like or dislike based on first impressions. If two users like
each other, they are allowed to initiate a conversation via the chat feature.
In this paper we use a set of curated profiles to explore the behaviour of men
and women in Tinder. We reveal differences between the way men and women
interact with the app, highlighting the strategies employed. Women attain large
numbers of matches rapidly, whilst men only slowly accumulate matches. To
expand on our findings, we collect survey data to understand user intentions on
Tinder. Most notably, our results indicate that a little effort in grooming
profiles, especially for male users, goes a long way in attracting attention
A near-field scanning microwave microscope in a scanning electron microscope: design and challenges
International audienc
Parameterization Models for Traceable Characterization of Planar CPW SOL Calibration Standards
International audienceMethods for traceable characterization and uncertainty evaluation of planar 1-port CPW short-open-load (SOL) devices are developed. The agreement of modelling and verification measurement results greatly supports the application of the proposed parameterization models and used FEM-based EM modelling of CPW structures for traceable characterization of planar CPW-based SOL devices in the frequency range between a few kHz up to 50 GHz
Multiport Vector Network Analyzer Configured in RF Interferometric Mode for Reference Impedance Renormalization
International audienceA novel active microwave interferometric technique is implemented on a multiport vector network analyzer for renormalizing the reference impedance 50 Ohms into any desired complex impedance. The resulting measured reflection coefficient around the new reference impedance is around zero, resulting in high measurement sensitivity. The method proposed avoids any external component commonly found in interferometric setups. In addition, a zeroing process including vector calibration is developed for broad frequency range and requires only a software procedure to be implemented in the system framework
Observation of psi (3686) -> n(n)over-bar and improved measurement of psi (3686) -> p(p)over-bar
We observe the decay psi (3686) -> n (n) over bar for the first time and measure psi (3686) -> p (p) over bar with improved accuracy by using 1.07 x 10(8) psi (3686) events collected with the BESIII detector. The measured branching fractions are B(psi(3686) -> n (n) over bar) = (3.06 +/- 0.06 +/- 0.14) x 10(-4) and B(psi(3686) -> p (p) over bar) = (3.05 +/- 0.02 +/- 0.12) x 10(-4). Here, the first uncertainties are statistical, and the second ones are systematic. With the hypothesis that the polar angular distributions of the neutron and proton in the center-of-mass system obey 1 + alpha cos(2) theta, we determine the a parameters to be alpha(n (n) over bar) = 0.68 +/- 0.12 +/- 0.11 and alpha(p (p) over bar) = 1.03 +/- 0.06 +/- 0.03 for psi(3686) -> n (n) over bar and psi(3686) -> p (p) over bar, respectively
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