Effect of α‑Heteroatoms on the Formation of Alkene-Derived Monolayers on H–Si(111): A Combined Experimental and Theoretical Study

We investigate herein whether the reactivity and surface coverage of 1-alkenes toward hydrogen-terminated Si(111) surfaces [H-Si(111)] can be improved by introducing heteroatoms such as oxygen and sulfur at the α-position next to the alkene functional group. To this end, the reactivity of 1-pentene, 1-pentyne, vinyl ethyl ether, and vinyl ethyl sulfide toward H–Si(111) and the surface coverage of the resulting monolayers were studied and compared. All modified surfaces were characterized by static water contact angle measurements, ellipsometry, X-ray photoelectron spectroscopy (XPS), and infrared absorption reflection spectroscopy (IRRAS). Quantum chemical calculations were performed to calculate the activation barriers and driving forces for monolayer formation at the M11-L/6-311G­(d,p) level of theory. Both experiments and theory indicate that the presence of α-heteroatoms next to the alkene function improved both the reactivity and surface coverage on H-terminated Si(111) surfaces

Odd–Even Effect in Molecular Electronic Transport via an Aromatic Ring

A distinct odd–even effect on the electrical properties, induced by monolayers of alkyl-phenyl molecules directly bound to Si(111), is reported. Monomers of H₂CCH–(CH₂)_<i>n</i>–phenyl, with <i>n</i> = 2–5, were adsorbed onto Si–H and formed high-quality monolayers with a binding density of 50–60% Si(111) surface atoms. Molecular dynamics simulations suggest that the binding proximity is close enough to allow efficient π–π interactions and therefore distinctly different packing and ring orientations for monomers with odd or even numbers of methylenes in their alkyl spacers. The odd−even alternation in molecular tilt was experimentally confirmed by contact angle, ellipsometry, FT-IR, and XPS with a close quantitative match to the simulation results. The orientations of both the ring plane and the long axis of the alkyl spacer are more perpendicular to the substrate plane for molecules with an even number of methylenes than for those with an odd number of methylenes. Interestingly, those with an even number conduct better than the effectively thinner monolayers of the molecules with the odd number of methylenes. We attribute this to a change in the orientation of the electron density on the aromatic rings with respect to the shortest tunneling path, which increases the barrier for electron transport through the odd monolayers. The high sensitivity of molecular charge transport to the orientation of an aromatic moiety might be relevant to better control over the electronic properties of interfaces in organic electronics

Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfaces

Molecular monolayers at metal/semiconductor heterointerfaces affect electronic energy level alignment at the interface by modifying the interface’s electrical dipole. On a free surface, the molecular dipole is usually manipulated by means of substitution at its external end. However, at an interface such outer substituents are in close proximity to the top contact, making the distinction between molecular and interfacial effects difficult. To examine how the interface dipole would be influenced by a single atom, internal to the molecule, we used a series of three molecules of identical binding and tail groups, differing only in the inner atom: aryl vinyl ether (<b>PhO</b>), aryl vinyl sulfide (<b>PhS</b>), and the corresponding molecule with a CH₂ groupallyl benzene (<b>PhC</b>). Molecular monolayers based on all three molecules have been adsorbed on a flat, oxide-free Si surface. Extensive surface characterization, supported by density functional theory calculations, revealed high-quality, well-aligned monolayers exhibiting excellent chemical and electrical passivation of the silicon substrate, in all three cases. Current–voltage and capacitance–voltage analysis of Hg/PhX (X = C, O, S)/Si interfaces established that the type of internal atom has a significant effect on the Schottky barrier height at the interface, i.e., on the energy level alignment. Surprisingly, despite the formal chemical separation of the internal atom and the metallic electrode, Schottky barrier heights were not correlated to changes in the semiconductor’s effective work function, deduced from Kelvin probe and ultraviolet photoemission spectroscopy on the monolayer-adsorbed Si surface. Rather, these changes correlated well with the ionization potential of the surface-adsorbed molecules. This is interpreted in terms of additional polarization at the molecule/metal interface, driven by potential equilibration considerations even in the absence of a formal chemical bond to the top Hg contact