Effect of Impurity Concentration on the Depth Profile of the Electric Field within Monolayer Thin Film

The effect of impurity concentration ratios on the depth profile of electric field within monolayer film is presented. SnO2 monolayer thin film material was prepared and doped with Co using spray chemical pyrolysis. The concentration ratios of impurity were 1 %, 3 %, 5 % and 7 %. The analysis utilizes matrix formulas based on Abele's formulas from the calculation of reflectance and transmittance. Present study gives an information to contamination sensitivity in optical coating issue. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2779

Study of Some Optical Properties of Mixed SnO2-CuO Thin Films

We report the transparent conducting mixed SnO2-CuO oxides films fabricated by chemical spray pyrolysis technique (CSPT). The effects of the film thickness on the optical absorptance of the TCO films are assessed. Optical absorption measurements were studied by UV-VIS technique in the wavelength ranges 400-1100 nm. Characteristics and optical constants of the mixed oxides thin film such as refractive index, extinction coefficient, real and imaginary parts of dielectric constant have been studied. The optical conductivity and the skin depth are increased with increasing the film thickness. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3026

Nanostructure Zinc Oxide with Cobalt Dopant by PLD for Gas Sensor Applications

The present paper is based on study of polycrystalline ZnO:Co thin films deposited on glass substrates by pulsed laser deposition (PLD) technique using pulsed Nd-YAG laser with wavelength ( = 532 nm) and duration (7 ns) and energy fluence (1.4 J/cm 2) with different doping (1 wt. %, 3 wt. % and 5 wt. %). The X-Ray diffraction patterns of the films showed that the ZnO films and ZnO:Co films exhibit wurtzite crystal structure and high crystalline quality. The root mean square (RMS) surface roughness of Co doped ZnO thin films was estimated using atomic force microscopy (AFM) found to be 50.95 nm, 55.78 nm, 56.94 nm and 67.88 nm for pure,1 wt. %, 3 wt. % and 5 wt. % Co doping concentrations respectively. Through the electrical properties, electrical D.C conductivity at temperature range (27-300) ºC for ZnO:Co films as studied which are realized that these films have two activation energies. Hall effect is studied to estimate the type of carriers, from the result we deduced that the ZnO:Co thin films are n-type. The films exhibited good sensitivity to the ethanol vapors with quick response-recovery characteristics and it was found that the sensitivity for detecting (80) ppm, for ethanol vapor was of (27.5), (31.75), (79.0) and (53.1) at an operating temperature of (50) C for ZnO:Co thin films. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2777