Passive InP regenerator integrated on SOI for the support of broadband silicon modulators

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signal at 1Gb/s with an ER of 2dB. Regenerator operation up to 5Gb/s is demonstrated and using a device simulator a strategy to reach higher bitrate operation is propose

All-optical membrane InP switch on silicon for access applications

Using an integrated membrane switch on SOI, optical clock distribution is achieved while all-optical switching of datapackets is maintained. Transmission through 25km SMF is demonstrated with 1.5dB penalty, limited by signal OSNR and pump extinction

InP membrane based broadband regenerator for silicon-based optical interconnect applications

We demonstrate the use of a Membrane-InP-Switch(MIPS) on-silicon as a signal regenerator. A receiver sensitivity enhancement >2.5dB across the entire C-band and a tripling of Extinction Ratio(ER) for low ER signals at 1Gb/sec is demonstrated

Membrane InP saturable absorbers on silicon as building blocks for transparent optical networks

As silicon photonics continues to gain research and industrial relevance, some of the building blocks in this technology such as modulators and switches still suffer from limitation when it comes to insertion losses and/or extinction ratio. In the past two years we have been investigating a promising new building block for silicon on insulator (SOI) circuits which is based on ultra-thin narrow stripes of InP bonded on top of SOI, which operate as saturable absorbers at very low optical power levels. The unique properties of these membrane InP switches (MIPS) make them ideally suitable as complementary components to SOI devices. By controlling the band gap of the active layers in the membrane as well as the confinement of light critical properties of such MIPS can be determined and tailored to specific applications. In this talk we will highlight two exciting applications of MIPS on SOI. First we will show how they enhance the performance of silicon based modulators by regenerating the signal through their non-linear response. Secondly we will show how they may solve a unique engineering challenge for next generation access networks by operating as optically controlled switches with high extinction ratio and no electrical power supply

A single InP membrane disc cavity for both transmission and detection of 10 Gb/s signals in on chip interconnects

We give proof of concept demonstrations for the use of a single InP membrane disc structure as both a directly modulated light source and photo-detector using a 27 -1 PRBS sequence at rates up to 10 Gb/s

Compact, low power and low threshold electrically pumped micro disc lasers for 20Gb/s non return to zero all optical wavelength conversion

\u3cp\u3eUsing a 7.5μm wide InP Micro-Disc-Laser, with a very low ∼100μA threshold current, heterogeneously integrated on top of Silicon on Insulator substrate, all optical NRZ wavelength conversion at speeds up to 20Gb/s is demonstrated.\u3c/p\u3

160 Gb/s optical packet switch module employing SOI integrated label extractor

We demonstrate a full functional 1×N optical packet switch employing a Silicon-on-Insulator integrated label extractor combined with a FPGA-based controller. Experimental results show error-free on-the-fly parallel and asynchronous optical label detection, processing and packet switching

High-speed direct-modulation of InP microdisk lasers

We demonstrate for the first time high-speed direct-modulation of InP microdisk lasers by exploiting longitudinal mode competition. High-speed operation is demonstrated by means of S21 and PRBS modulation. We show open eye diagrams and bit-error rates up to 10 Gb/s

Photonic subsystems for optical packet/burst switches based on heterogeneous SOI and III-V integration

In this paper we describe how high-quality silicon photonic ICs and III-V membrane switches integrated on this platfottit can be used to build photonic subsystems for optical packet switches

50 fJ-per-bit, high speed, directly modulated light sources for on-chip optical data communications

By employing optical injection-locking the direct modulation bandwidth of a 10 mu m diameter disc laser is increased to 15GHz. In addition, modulation at 20Gb/s is demonstrated with only 1mW DC bias & 190mV data signals (50fJ/bit