Graphite based Schottky diodes formed on Si, GaAs and 4H-SiC substrates

We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.Comment: 5 pages, 3 figures, 1 tabl

Ordered low-temperature structure in K4C60 detected by infrared spectroscopy

Infrared spectra of a K4C60 single-phase thin film have been measured between room temperature and 20 K. At low temperatures, the two high-frequency T1u modes appear as triplets, indicating a static D2h crystal-field stabilized Jahn-Teller distortion of the (C60)4- anions. The T1u(4) mode changes into the known doublet above 250 K, a pattern which could have three origins: a dynamic Jahn-Teller effect, static disorder between "staggered" anions, or a phase transition from an orientationally-ordered phase to one where molecular motion is significant.Comment: 4 pages, 2 figures submitted to Phys. Rev.

Calorimetric tunneling study of heat generation in metal-vacuum-metal tunnel junction

We have proposed novel calorimetric tunneling (CT) experiment allowing exact determination of heat generation (or heat sinking) in individual tunnel junction (TJ) electrodes which opens new possibilities in the field of design and development of experimental techniques for science and technology. Using such experiment we have studied the process of heat generation in normal-metal electrodes of the vacuum-barrier tunnel junction (VBTJ). The results show there exists dependence of the mutual redistribution of the heat on applied bias voltage and the direction of tunnel current, although the total heat generated in tunnel process is equal to Joule heat, as expected. Moreover, presented study indicates generated heat represents the energy of non-equilibrium quasiparticles coming from inelastic electron processes accompanying the process of elastic tunneling.Comment: 8 pages, 3 figures, LaTe

Pauli susceptibility of nonadiabatic Fermi liquids

The nonadiabatic regime of the electron-phonon interaction leads to behaviors of some physical measurable quantities qualitatively different from those expected from the Migdal-Eliashberg theory. Here we identify in the Pauli paramagnetic susceptibility $\chi$ one of such quantities and show that the nonadiabatic corrections reduce $\chi$ with respect to its adiabatic limit. We show also that the nonadiabatic regime induces an isotope dependence of $\chi$, which in principle could be measured.Comment: 7 pages, 3 figures, euromacr.tex, europhys.sty. Replaced with accepted version (Europhysics Letters

Quantum Resistive Transition in Type II Superconductors under Magnetic Field

It is shown that, within a Ginzburg-Landau (GL) formalism, the superconducting fluctuation is insulating at zero temperature even if the fluctuation dynamics is metallic (dissipative). Based on this fact, the low temperature behavior of the $H_{c2}$-line and the resistivity curves near a zero temperature transition are discussed. In particular, it is pointed out that the neglect of quantum fluctuations in data analysis of the dc resistivity may lead to an under-estimation of the $H_{c2}$ values near zero temperature.Comment: 7 page

Wetting to Non-wetting Transition in Sodium-Coated C_60

Based on ab initi and density-functional theory calculations, an empirical potential is proposed to model the interaction between a fullerene molecule and many sodium atoms. This model predicts homogeneous coverage of C_60 below 8 Na atoms, and a progressive droplet formation above this size. The effects of ionization, temperature, and external electric field indicate that the various, and apparently contradictory, experimental results can indeed be put into agreement.Comment: 4 pages, 4 postscript figure

Effect of in-plane line defects on field-tuned superconductor-insulator transition behavior in homogeneous thin film

Field-tuned superconductor-insulator transition (FSIT) behavior in 2D isotropic and homogeneous thin films is usually accompanied by a nonvanishing critical resistance at low $T$. It is shown that, in a 2D film including line defects paralle to each other but with random positions perpendicular to them, the (apparent) critical resistance in low $T$ limit vanishes, as in the 1D quantum superconducting (SC) transition, under a current parallel to the line defects. This 1D-like critical resistive behavior is more clearly seen in systems with weaker point disorder and may be useful in clarifying whether the true origin of FSIT behavior in the parent superconductor is the glass fluctuation or the quantum SC fluctuation. As a by-product of the present calculation, it is also pointed out that, in 2D films with line-like defects with a long but {\it finite} correlation length parallel to the lines, a quantum metallic behavior intervening the insulating and SC ones appears in the resistivity curves.Comment: 16 pages, 14 figure

Asymmetric metal-insulator transition in disordered ferromagnetic films

We present experimental data and a theoretical interpretation on the conductance near the metal-insulator transition in thin ferromagnetic Gd films of thickness b approximately 2-10 nm. A large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L_phi < b in the range of sheet resistances considered, so that the effective dimension is d = 3. The observed approximate fractional temperature power law of the conductivity is ascribed to the scaling regime near the transition. The conductivity data as a function of temperature and disorder strength collapse on to two scaling curves for the metallic and insulating regimes. The best fit is obtained for a dynamical exponent z approximately 2.5 and a correlation length critical exponent \nu' approximately 1.4 on the metallic side and a localization length exponent \nu approximately 0.8 on the insulating side.Comment: 4 pages, 4 figure

A Gaussian Theory of Superfluid--Bose-Glass Phase Transition

We show that gaussian quantum fluctuations, even if infinitesimal, are sufficient to destroy the superfluidity of a disordered boson system in 1D and 2D. The critical disorder is thus finite no matter how small the repulsion is between particles. Within the gaussian approximation, we study the nature of the elementary excitations, including their density of states and mobility edge transition. We give the gaussian exponent $\eta$ at criticality in 1D and show that its ratio to $\eta$ of the pure system is universal.Comment: Revtex 3.0, 11 pages (4 figures will be sent through airmail upon request

Evolution of the Density of States Gap in a Disordered Superconductor

It has only recently been possible to study the superconducting state in the attractive Hubbard Hamiltonian via a direct observation of the formation of a gap in the density of states N(w). Here we determine the effect of random chemical potentials on N(w) and show that at weak coupling, disorder closes the gap concurrently with the destruction of superconductivity. At larger, but still intermediate coupling, a pseudo-gap in N(w) remains even well beyond the point at which off-diagonal long range order vanishes. This change in the elementary excitations of the insulating phase corresponds to a crossover between Fermi- and Bose-Insulators. These calculations represent the first computation of the density of states in a finite dimensional disordered fermion model via the Quantum Monte Carlo and maximum entropy methods.Comment: 4 pages, 4 figure