55 research outputs found
Tunable Multifunctional Topological Insulators in Ternary Heusler Compounds
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and
experimentally realized in a quantum wells based on binary semiconductor
HgTe[1-3]. QSH state and topological insulators are the new states of quantum
matter interesting both for fundamental condensed matter physics and material
science[1-11]. Many of Heusler compounds with C1b structure are ternary
semiconductors which are structurally and electronically related to the binary
semiconductors. The diversity of Heusler materials opens wide possibilities for
tuning the band gap and setting the desired band inversion by choosing
compounds with appropriate hybridization strength (by lattice parameter) and
the magnitude of spin-orbit coupling (by the atomic charge). Based on the
first-principle calculations we demonstrate that around fifty Heusler compounds
show the band inversion similar to HgTe. The topological state in these
zero-gap semiconductors can be created by applying strain or by designing an
appropriate quantum well structure, similar to the case of HgTe. Many of these
ternary zero-gap semiconductors (LnAuPb, LnPdBi, LnPtSb and LnPtBi) contain the
rare earth element Ln which can realize additional properties ranging from
superconductivity (e. g. LaPtBi[12]) to magnetism (e. g. GdPtBi[13]) and
heavy-fermion behavior (e. g. YbPtBi[14]). These properties can open new
research directions in realizing the quantized anomalous Hall effect and
topological superconductors.Comment: 20 pages, 5 figure
First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb
We use first-principles density functional theory to calculate the phonon frequencies, electron localization lengths, Born effective charges, dielectric response, and conventional electronic structures of the IV-VI chalcogenide series. The goals of our work are twofold: first, to determine the detailed chemical composition of lone pairs and, second, to identify the factors that cause lone pairs to favor high- or low-symmetry environments. Our results show that the traditional picture of cation s-p mixing causing localization of the lone pair lobe is incomplete, and instead the p states on the anion also play an important role. In addition these compounds reveal a delicate balance between two competing instabilities—structural distortion and tendency to metallicity—leading, at the same time, to anomalously large Born effective charges as well as large dielectric constants. The magnitude of the LO-TO splitting, which depends on the relative strength of both instabilities, shows a trend consistent with the structural distortions in these compounds
Stiles-Crawford Effect of Second Kind in the Light of Spectral Shift Due to Source Correlation
Half-Metallic Magnetism of Quaternary Heusler Compounds Co2Fe x Mn1−x Si(x =0,0.5, and 1.0): First-Principles Calculations
Electronic and magnetic properties of a full-Heusler alloy Co2CrGe: a first-principles study
Investigations of the Structural, Electronic, Magnetic, and Half-Metallic Behavior of Co2MnZ (Z = Al, Ge, Si, Ga) Full-Heusler Compounds
Pressure-induced magnetic moment abnormal increase in Mn2FeAl and non-continuing decrease in Fe2MnAl via first principles
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