Thermal effect on current gains of an AlGaAs/GaAs heterostructure-emitter bipolar transistor

The temperature dependence of current gain was investigated for AlGaAs/GaAs heterostructure-emitter bipolar transistors (HEBT). The current gain of the HEBT was found much less sensitive to temperature variation than that of a heterojunction bipolar transistor. In particular, the HEBT current gain was more or less constant with increasing temperature at the high current regime, indicating great potentials for power applications.published_or_final_versio

Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors

The temperature effect on current gain is presented for GalnP/GaAs heterojunction and heterostructure-emitter bipolar transistors (HBT's and HEBT's). Experimental results showed that the current gain of the HEBT increases with the increase of temperature in the temperature range of 25-125 °C and decreases slightly at temperatures above 150 °C. The smaller the collector current, the larger is the positive differential temperature coefficient. At high current levels, the current gain dependence on temperature is significantly reduced. On the other hand, a large negative coefficient is observed in the HBT in all current range. This finding indicates that the HEBT is a better candidate than the HBT for power devices. © 1999 IEEE Publisher Item Identifier S 0018-9383(99)00257-9.published_or_final_versio

Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.published_or_final_versio

Design of a Third-party Reverse Logistics Network under a Carbon Tax Scheme

© 2016 Eastern Macedonia and Thrace Institute of Technology. Reverse logistics network involves significant inherent uncertainties, which cannot be completely characterized because of a lack of adequate historical data. In this study, a multi-product and multi-period interval programming model was developed on the basis of partial information to design an effective reverse logistics network. In addition, the trade-offbetween economic benefits and the environmental burdens from carbon emissions was analyzed by considering the effect of a carbon tax scheme on the reverse logistics network design. Through an improved and modified interval linear programming method, the optimal interval solution was obtained with LINGO. Finally, numerical simulations were conducted to explore the effectiveness of the model and the effect of the carbon tax scheme. Results show that the optimal solution of the reverse logistics network design is robust. The effect of the carbon tax scheme is trivial when the carbon tax is low and significant when the carbon tax is high. As carbon tax gradually increases, carbon emissions effectively decrease, but sharply declines the total profit sharply declines. The findings indicate that the proposed model can effectively solve the reverse logistics network design with partial information under a carbon tax scheme

Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene

In this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increase in oxidation rate induced by TCE is between 2.7 and 67% for a TCE ratio of 0.001-0.2 and a temperature of 1000-1150°C. Generally, the oxidation rate increases quickly with the TCE ratio for a TCE ratio less than 0.05 and then gradually saturates for a ratio larger than 0.05. The activation energy EB/A of the TCE oxidation for the TCE ratio range of 0.001-0.2 is 1.04-1.05 eV, which is a little larger than the 1.02 eV of dry oxidation. A two-step model for the TCE oxidation is also proposed to explain the experimental results. The model points out that in the SiC oxidation with TCE, the products (H2O and Cl2) of the reaction between TCE and O2 can speed up the oxidation, and hence, the oxidation rate is highly sensitive to the TCE ratio. © 2005 The Electrochemical Society. All rights reserved.published_or_final_versio

An Efficient Representation of Euclidean Gravity I

We explore how the topology of spacetime fabric is encoded into the local structure of Riemannian metrics using the gauge theory formulation of Euclidean gravity. In part I, we provide a rigorous mathematical foundation to prove that a general Einstein manifold arises as the sum of SU(2)_L Yang-Mills instantons and SU(2)_R anti-instantons where SU(2)_L and SU(2)_R are normal subgroups of the four-dimensional Lorentz group Spin(4) = SU(2)_L x SU(2)_R. Our proof relies only on the general properties in four dimensions: The Lorentz group Spin(4) is isomorphic to SU(2)_L x SU(2)_R and the six-dimensional vector space of two-forms splits canonically into the sum of three-dimensional vector spaces of self-dual and anti-self-dual two-forms. Consolidating these two, it turns out that the splitting of Spin(4) is deeply correlated with the decomposition of two-forms on four-manifold which occupies a central position in the theory of four-manifolds.Comment: 31 pages, 1 figur

Proteomics Analysis of Ovarian Cancer Cell Lines and Tissues Reveals Drug Resistance-associated Proteins

Background: Carboplatin and paclitaxel form the cornerstone of chemotherapy for epithelial ovarian cancer, however, drug resistance to these agents continues to present challenges. Despite extensive research, the mechanisms underlying this resistance remain unclear. Materials and Methods: A 2D-gel proteomics method was used to analyze protein expression levels of three human ovarian cancer cell lines and five biopsy samples. Representative proteins identified were validated via western immunoblotting. Ingenuity pathway analysis revealed metabolomic pathway changes. Results: A total of 189 proteins were identified with restricted criteria. Combined treatment targeting the proteasome-ubiquitin pathway resulted in re-sensitisation of drug-resistant cells. In addition, examination of five surgical biopsies of ovarian tissues revealed α-enolase (ENOA), elongation factor Tu, mitochondrial (EFTU), glyceraldehyde-3-phosphate dehydrogenase (G3P), stress-70 protein, mitochondrial (GRP75), apolipoprotein A-1 (APOA1), peroxiredoxin (PRDX2) and annexin A (ANXA) as candidate biomarkers of drug-resistant disease. Conclusion: Proteomics combined with pathway analysis provided information for an effective combined treatment approach overcoming drug resistance. Analysis of cell lines and tissues revealed potential prognostic biomarkers for ovarian cancer

Suppression of photoconductivity by magnetic field in epitaxial manganite thin films

The erasure of photoinduced resistance (PR) by the magnetic field was investigated in manganite films. The PR was significantly suppressed when a magnetic field was introduced at low temperature. The decrease (or increase) of PR with increment of magnetic field was observed in ferromagnetic (or paramagnetic) phases of films, respectively. Our results are suggested to be the coaction of two effects under magnetic fields: (i) the reorientation of domains and spin directions of photoexcited carriers and (ii) electrons trapped around oxygen vacancies released and recombined with majority carriers in films. The interplay of the external fields is a good demonstration of the strong coupling between spins and charges in colossal magnetoresistance materials. © 2012 American Institute of Physics.published_or_final_versio