Phase separation in transparent liquid-liquid miscibility gap systems

A program to be carried out on transparent liquid-phase miscibility gap materials was developed for the purpose of acquiring additional insight into the separation process occurring in these systems. The transparency feature allows the reaction to be viewed directly through light scattering and holographic methods

Evidence for long-term variability in the ultra high energy photon flux from Cygnus X-3

A time-correlation analysis of atmospheric Cerenkov pulses by a wide-angle photomultiplier system was previously shown to have present in it a nonrandom component which seemed associated with the Right Ascension (RA) range approx. 20+or-04h. A recent examination of multi-muon events recorded by a photon-decay detector shows a similar time-dependent effect, closely matching the previous results, supporting the suggestion that the effect is of cosmic origin. However, even though Cyg. X-3 lies well inside the region of peak intensity, it does not seem possible to ascribe to it the whole effect, for the implied photon flux appears too large to be reconciled to various gamma-ray measurements of Cyg. X-3. The original data were subjected to a phase-histogram analysis and it as found that only 2.5% of overall recorded data are compatible with a phase-dependent emission from Cyg. X-3. Assuming these events to be gamma rays yields a detected flux of (2.6 + or - 0.3) x 10 to the minus 12th power gamma cm -2s-1 above 5 x 10 to the 14th power eV. Comparing this value with more recent ultra high energy (UHE) photon data from the same source, it is suggested that the available data generally favor a long-term reduction in the Cyg. X-3 inferred luminosity ( 10 to the 13th power eV) by a factor of (1.8 + or - 0.3) per year

1.57 μm InGaAsP/InP surface emitting lasers by angled focus ion beam etching

The characteristics of 1.57 μm InGaAsP/InP surface emitting lasers based on an in-plan ridged structure and 45° beam deflectors defined by angled focused ion beam (FIB) etching are reported. With an externally integrated beam deflector, threshold currents and emission spectra identical to conventional edge emitting lasers are achieved. These results show that FIB etching is a very promising technique for the definition of high quality mirrors and beam deflectors on semiconductor heterostructures for a variety of integrated optoelectronic devices