The investigation of the annealing temperature for CdS cauliflower-like thin films grown by using CBD

The Cadmium Sulfide (CdS) cauliflower-like thin films were prepared on glass substrates by using chemical bath deposition at 80 °C. The films were annealed at different temperatures (373, 473, 573, 673 and 773 K) for 1 h at ambient air. The XRD results showed that these films were both in cubic and hexagonal structure and there was no structural alteration among films at different annealing temperatures. The SEM images depicted that the as-deposited film and the film annealed at 373 K had a conifer-like structure; at higher annealing temperatures, the conifer-like structures combined and formed cauliflower-like structures. Also, it was found that the optical band gap decreased from 2.42 to 2.39 eV, with the increase of annealing temperature. The electrical measurements (resistivity, carrier concentration and mobility) of the CdS films were carried out by means of Hall Effect at room temperatures. © 2016, Springer Science+Business Media New York

Structural properties of CdSe corn-like nanowires grown by chemical bath deposition

The Cadmium Selenide (CdSe) nanowire thin films were prepared on glass substrates by chemical bath deposition at 70 °C. The CdSe nanowire film was annealed in an air atmosphere at 100, 200, 300, 400 and 500 °C for 1 h. Corn-like nanowires structure was observed when the CdSe nanowire films were annealed in air atmosphere at 300, 400 and 500 °C. Scanning electron microscope indicated that the CdSe nanowires and corn-like nanowires have a diameter of about 53.0–327.0 nm while their length is about 0.75–5.0 µm. The surface particles of the corn-like nanowires have a diameter of around 30–50 nm. X-ray diffraction results showed that these films have a mixed phase of cubic and hexagonal. The optical properties of the as-deposited and annealed films were investigated by recording the transmission spectra by using UV–visible spectrophotometer. It has been observed that the energy band gap decreased upon annealing (from 1.81 to 1.40 eV). The electrical measurements (resistivity, carrier concentration and mobility) of the CdSe films were carried out using of Hall Effect at room temperatures. © 2016, Springer Science+Business Media New York