Induced top Yukawa coupling and suppressed Higgs mass parameters

In the scenarios with heavy top squarks, mass parameters of the Higgs field must be fine-tuned due to a large logarithmic correction to the soft scalar mass. We consider a new possibility that the top Yukawa coupling is small above TeV scale. The large top mass is induced from strong Yukawa interaction of the Higgs with another gauge sector, in which supersymmetry breaking parameters are given to be small. Then it is found that the logarithmic correction to the Higgs soft scalar mass is suppressed in spite of the strong coupling and the fine-tuning is ameliorated. We propose an explicit model coupled to a superconformal gauge theory which realizes the above situation.Comment: RevTeX4 style, 10 pages, 3 figure

Preparations of methoxynitrophenazines and their photoconductivities

Eight methoxynitrophenazines with a methoxy group at the 1 or 2 position and a nitro group at the 6-, 7-, 8- or 9-position of the phenazine ring 1,6, 1,7. 1,8, 1,9, 2,6, 2,7, 2,8 and 2,9 were prepared and their photocurrents were measured by illuminating the surface-type cell with white light from a W lamp under a N atmosphere at room temp. The photocurrents of 1-nitrophenazine 6 and 2-nitrophenazine 7 are compared with those of the methoxynitrophenazines. The photocurrent (i sub p) increases with increasing light intensity (I), thus satisfying log i varies as n log I. The n values are 0.5-1.0. When the nitro group is located at the beta-position of the phenazine ring, the photocurrent becomes larger owing to the electron withdrawing property of the nitro group. On the other hand, the photocurrents of phenazines with the nitro group at the Alpha-position are extremely small. The photoconductivities of methoxynitrophenazines are lower in air

Effects of various additives on sintering of aluminum nitride

Effects of thirty additives on sintering A/N were investigated. The addition of alkali earth oxides and rare earth oxides gave fully densified aluminum nitride. This is due to the formation of nitrogen-containing aluminate liquid in the system aluminum nitride-alkali earth oxides or rare earth oxides. Microstructural studies of the sintered specimens with the above two types of additives suggested that the densification was due to the liquid phase sintering. Additions of silicon compounds resulted in poor densification by the formation of highly refractory compounds such as A/N polytypes

Electronic structure of Ca1−x_{1-x}Srx_xVO3_3: a tale of two energy-scales

We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.Comment: 4 pages and 3 figures. Europhysics Letters (appearing

Field Effect Transistor Based on KTaO3 Perovskite

An n-channel accumulation-type field effect transistor (FET) has been fabricated utilizing a KTaO3 single crystal as an active element and a sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room temperature, both of which are much better than those of the SrTiO3 FETs reported previously. The field effect mobility was almost temperature independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface is worthy of further investigations as an alternative system of future oxide electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let

Silicon nitride powder

The characteristics and preparation methods of Si3N4 are reviewed. Special emphasis is placed on the correlation between impurities and strength of sintered Si3N4

Observation of EAS using a large water tank

Using a large water tank (30 m in diameter, 4.5 m in depth) transition of extensive air showers (EAS) was investigated at Taro (200 m above sea level). There are set 150,0.4 sq m proportional counters on the bottom of the water tank. A conventional EAS array of 25 plastic scintillation detectors was arranged within several tens meter from the water tank. A proportional counter (10x10x200 cc x2) is made of a square shaped pipe of iron. Tungsten wire (100 mu m phi) is stretched tight in the center of the counter. A gas mixture of 90% argon and 10% methane is used at 760 mmHg. About 3000 EAS were obtained through 1 m of water since 1984

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition

We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.Comment: 4 pages, 4 figures (REVTeX

Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained are one or two orders of magnitude larger than predicted values for p-type semiconductors with 5% hole doping. The origin of these giant Hall effects is the ``effective Aharonov-Bohm phase'' that is induced by the d-atomic angular momentum in connection with the spin-orbit interaction and the inter-orbital hopping integrals. The huge SHC and OHC generated by this mechanism are expected to be ubiquitous in multiorbital transition metal complexes, which pens the possibility of realizing spintronics as well as orbitronics devices.Comment: 5 pages, accepted for publication in PR