Susceptibility testing for welding of AlMg alloys intended for extrusion

The objective of research was to determine the weldability, using Tungsten Inert Gas (TIG) of extruded sections made of hard-deformable 5xxx series aluminum alloys with differing magnesium content, i.e. AlMg3, AlMg4,5, AlMg5, AlMg7. Welded joints were obtained as a result of a welding process consisting of several steps. Only welds characterized by very good appearance and quality were selected for tests. As a result of conducted research, TIG welding parameters were determined for sections with a thickness of 8 mm. It was observed that alloys of differing Mg content are characterized by high weldability and do not exhibit a significant reduction of the yield point. Moreover, joints exhibit uniform hardness distribution in the welded joint and heat-affected zone. Tensile strength is reduced

Solid solution strengthening in GaSb/GaAs: A mode to reduce the TD density through Be-doping

The need for a low bandgap semiconductor on a GaAs substrate for thermophotovoltaic applications has motivated research on GaSb alloys, in particular, the control of plastic relaxation of its active layer. Although interfacial misfit arrays offer a possibility of growing strain-free GaSb-based devices on GaAs substrates, a high density of threading dislocations is normally observed. Here, we present the effects of the combined influence of Be dopants and low growth temperature on the threading dislocation density observed by Transmission Electron Microscopy. The Be-related hardening mechanism, occurring at island coalescence, is shown to prevent dislocations to glide and hence reduce the threading dislocation density in these structures. The threading density in the doped GaSb layers reaches the values of seven times less than those observed in undoped samples, which confirms the proposed Be-related hardening mechanism

Preferred growth direction of III-V nanowires on differently oriented Si substrates

One of the nanowire (NW) characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs NWs. We first studied the self-catalyzed GaAs NW growth on Si (111) and Si (001) substrates. SEM observations show GaAs NWs on Si (001) are grown along four directions without preference on one or some of them. This non-preferential NW growth on Si (001) is morphologically in contrast to the extensively reported vertical preferred GaAs NW growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs NWs along selected directions depending on the Si substrate orientation. To verify the prevalence of the model, NWs were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of NW preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III–V substrates

Preferred growth direction of III-V nanowires on differently oriented Si substrates

One of the nanowire characteristics is its preferred elongation direction. Here, we investigated the impact of Si substrate crystal orientation on the growth direction of GaAs nanowires. We first studied the self-catalyzed GaAs nanowire growth on Si (111) and Si (001) substrates. SEM observations show GaAs nanowires on Si (001) are grown along four directions without preference on one or some of them. This non-preferential nanowire growth on Si (001) is morphologically in contrast to the extensively reported vertical preferred GaAs nanowire growth on Si (111) substrates. We propose a model based on the initial condition of an ideal Ga droplet formation on Si substrates and the surface free energy calculation which takes into account the dangling bond surface density for different facets. This model provides further understanding of the different preferences in the growth of GaAs nanowires along selected directions depending on the Si substrate orientation. To verify the prevalence of the model, nanowires were grown on Si (311) substrates. The results are in good agreement with the three-dimensional mapping of surface free energy by our model. This general model can also be applied to predictions of nanowire preferred growth directions by the vapor-liquid-solid growth mode on other group IV and III-V substrates

Introduction of WO3 Layer in a Cu-Based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window

In this paper, we optimize a WO3\Al2O3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing a WO3 layer formed by thermal oxidation of a W plug, the hourglass shape of the conductive filament is desirably controlled, enabling excellent switching behavior. We demonstrate a clear improvement of the microstructure and density of the WO3 layer by increasing the oxidation time and temperature, resulting in a strong increase of the high-resistance-state breakdown voltage. The high quality WO3 microstructure allows thus the use of a larger reset pulse amplitude resulting both in larger memory window and failure-free write cycling.1197Ysciescopu

Type-II InAs/GaAsSb Quantum Dot Solar Cells With GaAs Interlayer

One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells is the short lifetime of charge carriers (∼1 ns). To investigate this, InAs QD/GaAs 1--xSbx quantum well (QW) solar cells (SCs) with a 2-nm GaAs interlayer between the QDs and QW were fabricated for x = 0, 0.08, 0.14, and 0.17, respectively. Time-resolved photoluminescence measurements demonstrated prolonged carrier lifetimes up to 480 ns for the type-II SCs with x ≥ 14%. This improvement in carrier lifetime is assigned to the GaAs interlayer that reduces the wavefunction overlap between the electrons accumulated in the QDs and holes in the QW, and hence limits the possible emission pathways. External quantum efficiency measurements were performed to analyze the SC performance. An order of magnitude improvement was observed in the QD region (900–1200 nm) for the type-II SCs and is linked to the prolonged carrier lifetime

Anomalous diffusion and Tsallis statistics in an optical lattice

We point out a connection between anomalous quantum transport in an optical lattice and Tsallis' generalized thermostatistics. Specifically, we show that the momentum equation for the semiclassical Wigner function that describes atomic motion in the optical potential, belongs to a class of transport equations recently studied by Borland [PLA 245, 67 (1998)]. The important property of these ordinary linear Fokker--Planck equations is that their stationary solutions are exactly given by Tsallis distributions. Dissipative optical lattices are therefore new systems in which Tsallis statistics can be experimentally studied.Comment: 4 pages, 1 figur

Susceptibility testing for welding of AlMg alloys intended for extrusion

The objective of research was to determine the weldability, using Tungsten Inert Gas (TIG) of extruded sections made of hard-deformable 5xxx series aluminum alloys with differing magnesium content, i.e. AlMg3, AlMg4,5, AlMg5, AlMg7. Welded joints were obtained as a result of a welding process consisting of several steps. Only welds characterized by very good appearance and quality were selected for tests. As a result of conducted research, TIG welding parameters were determined for sections with a thickness of 8 mm. It was observed that alloys of differing Mg content are characterized by high weldability and do not exhibit a significant reduction of the yield point. Moreover, joints exhibit uniform hardness distribution in the welded joint and heat-affected zone. Tensile strength is reduced

2.5-µm InGaAs photodiodes grown on GaAs substrates by interfacial misfit array technique

In0.85Ga0.15As photodetectors grown on GaAs substrates using an interfacial misfit array-based simple buffer are studied. The material quality is assessed with a range of characterization tools showing low surface roughness and low density of threading dislocations. These results indicate a significant improvement on crystal quality compared to structures grown on InP substrates by using metamorphic buffers. Quantum efficiency and responsivity measurements show good performance of the fabricated devices between 1.5 and 2.5 µm, making them highly suitable for short-wavelength infrared applications

Growth of Pure Zinc-Blende GaAs(P) Core-Shell Nanowires with Highly Regular Morphology

The growth of self-catalyzed core–shell nanowires (NWs) is investigated systematically using GaAs(P) NWs. The defects in the core NW are found to be detrimental for the shell growth. These defects are effectively eliminated by introducing beryllium (Be) doping during the NW core growth and hence forming Be–Ga alloy droplets that can effectively suppress the WZ nucleation and facilitate the droplet consumption. Shells with pure zinc-blende crystal quality and highly regular morphology are successfully grown on the defect-free NW cores and demonstrated an enhancement of one order of magnitude for room-temperature emission compared to that of the defective shells. These results provide useful information on guiding the growth of high-quality shell, which can greatly enhance the NW device performance