Assessing and Remedying Coverage for a Given Dataset

Data analysis impacts virtually every aspect of our society today. Often, this analysis is performed on an existing dataset, possibly collected through a process that the data scientists had limited control over. The existing data analyzed may not include the complete universe, but it is expected to cover the diversity of items in the universe. Lack of adequate coverage in the dataset can result in undesirable outcomes such as biased decisions and algorithmic racism, as well as creating vulnerabilities such as opening up room for adversarial attacks. In this paper, we assess the coverage of a given dataset over multiple categorical attributes. We first provide efficient techniques for traversing the combinatorial explosion of value combinations to identify any regions of attribute space not adequately covered by the data. Then, we determine the least amount of additional data that must be obtained to resolve this lack of adequate coverage. We confirm the value of our proposal through both theoretical analyses and comprehensive experiments on real data.Comment: in ICDE 201

Bridging the Semantic Gap with SQL Query Logs in Natural Language Interfaces to Databases

A critical challenge in constructing a natural language interface to database (NLIDB) is bridging the semantic gap between a natural language query (NLQ) and the underlying data. Two specific ways this challenge exhibits itself is through keyword mapping and join path inference. Keyword mapping is the task of mapping individual keywords in the original NLQ to database elements (such as relations, attributes or values). It is challenging due to the ambiguity in mapping the user's mental model and diction to the schema definition and contents of the underlying database. Join path inference is the process of selecting the relations and join conditions in the FROM clause of the final SQL query, and is difficult because NLIDB users lack the knowledge of the database schema or SQL and therefore cannot explicitly specify the intermediate tables and joins needed to construct a final SQL query. In this paper, we propose leveraging information from the SQL query log of a database to enhance the performance of existing NLIDBs with respect to these challenges. We present a system Templar that can be used to augment existing NLIDBs. Our extensive experimental evaluation demonstrates the effectiveness of our approach, leading up to 138% improvement in top-1 accuracy in existing NLIDBs by leveraging SQL query log information.Comment: Accepted to IEEE International Conference on Data Engineering (ICDE) 201

Circles of Privacy

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/163476/2/jcpy1188_am.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/163476/1/jcpy1188.pd

The influence of atmosphere on the performance of pure-phase WZ and ZB InAs nanowire transistors

We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires.Comment: Accepted for publication in Nanotechnolog

RRR: Rank-Regret Representative

Selecting the best items in a dataset is a common task in data exploration. However, the concept of "best" lies in the eyes of the beholder: different users may consider different attributes more important, and hence arrive at different rankings. Nevertheless, one can remove "dominated" items and create a "representative" subset of the data set, comprising the "best items" in it. A Pareto-optimal representative is guaranteed to contain the best item of each possible ranking, but it can be almost as big as the full data. Representative can be found if we relax the requirement to include the best item for every possible user, and instead just limit the users' "regret". Existing work defines regret as the loss in score by limiting consideration to the representative instead of the full data set, for any chosen ranking function. However, the score is often not a meaningful number and users may not understand its absolute value. Sometimes small ranges in score can include large fractions of the data set. In contrast, users do understand the notion of rank ordering. Therefore, alternatively, we consider the position of the items in the ranked list for defining the regret and propose the {\em rank-regret representative} as the minimal subset of the data containing at least one of the top-$k$ of any possible ranking function. This problem is NP-complete. We use the geometric interpretation of items to bound their ranks on ranges of functions and to utilize combinatorial geometry notions for developing effective and efficient approximation algorithms for the problem. Experiments on real datasets demonstrate that we can efficiently find small subsets with small rank-regrets

Electrical isolation of GaN by MeV ion irradiation

The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of the physical mechanisms responsible for electrical isolation, these results can be used for choosing implant conditions necessary for an effective electrical isolation of GaN-based devices.This work was partly supported by Conselho Nacional de Pesquisas (CNPq, Brazil) under Contract No. 200541/ 99-4

Database Management for Life Science Research: Summary Report of the Workshop on Data Management for Molecular and Cell Biology at the National Library of Medicine, Bethesda, Maryland, February 2–3, 2003

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/63107/1/153623103322006797.pd