Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST) Thin Film Doped with Ferric Oxide on p-type Si (100) Substrate using Chemical Solution Deposition Method

In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST) and BST doped by Ferric Oxide Fe2O3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon (100) substrate using the chemical solution deposition (CSD) method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850oC for the Si (100) substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V) curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15% of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003. Received: 01 February 2010; Revised: 04 October 2011; Accepted: 02 November 201

Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film

Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200oC, 240oC, 280oC (low temperature) for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM) method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0.632 nm, 0.564 nm, 0.487 nm for temperature 200oC, 240oC, 280oC, respectively, whereas the grain size (mean diameter) are 238.4 nm, 219.0 nm, 185.1 nm for temperature 200oC, 240oC, 280oC, respectively. In fact, to increase annealing temperature from 200oC to 280oC would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature. Received: 9 November 2008; Revised: 24 August 2009; Accepted: 25 August 200

Electrical Properties of Photodiode Ba0.25Sr0.75TiO3 (BST) Thin Film Doped with Ferric Oxide on P-type Si (100) Substrate Using Chemical Solution Deposition Method

In this paper we have grown pure Ba0.25Sr0.75TiO3 (BST) and BST doped by Ferric Oxide Fe2O3 (BFST) with doping variations of 5%, 10%, and 15% above type-p Silicon (100) substrate using the chemical solution deposition (CSD) method with spin coating technique at rotation speed of 3000 rpm, for 30 seconds. BST thin film are made with a concentration of 1 M 2-methoxyethanol and annealing temperature of 850oC for the Si (100) substrate. Characterization of the thin film is performed for the electrical properties such as the current-voltage (I-V) curve using Keithley model 2400 as well as dielectric constant, time constant, pyroelectric characteristics, and depth measurement. The results show that the thin film depth increases if the concentration of the Ferric Oxide doping increases. The I-V characterization shows that the BST and BFST thin film has photodiode properties. The dielectric constant increases with the addition of doping. The maximum dielectric constant value is obtained for 15 % doping concentration namely 83.1 for pure BST and 6.89, 11.1, 41.63 and 83.1, respectively for the Ferric Oxide doping based BST with concentration of 5%, 10%, and 15%. XRD spectra of 15% of ferric oxide doped BST thin film tetragonal phase, we carried out the lattice constant were a = b = 4.203 Å; c = 4.214 Å; c/a ratio = 1.003. Received: 01 February 2010; Revised: 04 October 2011; Accepted: 02 November 201

Simulasi Pemanfaatan Data Losat Untuk Pemetaan Padi

Simulation onthe Use of LOSAT Data for Rice Field Mapping. Since the launch of LAPAN-TUBSAT satellite in 2007, Indonesia has been developing mission on earth observation missions for various applications. The next generation mission, called LAPAN-ORARI Satellite (LOSAT), is currently under development and expected to be launched in 2011. In order to facilitate the applications, a thorough assessment of the sensor should be made. This paper presents an examination of simulated LOSAT data for rice monitoring and mapping purposes coupled with QUEST statistical tree. We found that three-band simulated LOSAT data were suitable for the task with reasonably high accuracy

PYROELECTRIC PROPERTIES OF LEAD ZIRCONIUM TITANATE (PbZr0.525Ti0.475O3) METAL-FERROELECTRIC-METAL CAPACITOR AND ITS APPLICATION FOR IR SENSOR

PYROELECTRIC PROPERTIES OF LEAD ZIRCONIUM TITANATE (PbZr0.525Ti0.475O3) METAL-FERROELECTRIC-METAL CAPACITOR AND ITS APPLICATION FOR IR SENSOR. Thin films lead zirconium titanate (PbZr0.525Ti0.475O3) prepared on Pt(200)/SiO2/Si(100) substrates using chemical solution deposition (CSD) method for 0.5 M solution have been investigated. The films were grown by spin coating at 2500, 3000, 3500 rpm for 30 seconds, and then annealing at 750oC for 3 hours. X-ray diffraction (XRD), pyroelectric properties observation were employed to characterize the grown films. The film shows tetragonal structure with lattice constants are a = b = 4.141 Å, c = 3.828 Å. The voltage responsivity (rv) measured at chopper frequency of 2000 Hz and at wavelength of 947 nm are between 32.7-44.9 μV/W. Meanwhile, the pyroelectric coefficient (p) are in the range of 5.01 x 10-4-6.88 x 10-4 C/m2K for PZT thin films. These results show that PZT thin films are suitable for use as a pyroelectric IR sensor

STUDI STRUKTURMIKRO DAN MORFOLOGI FILM InXGa1-XN YANG DITUMBUHKAN DI ATAS SUBSTRAT SAPPHIRE (0006) DENGAN METODE MOCVD BERBANTUAN PLASMA

STUDI STRUKTURMIKRO DAN MORFOLOGI FILM InXGa1-XN YANG DITUMBUHKAN DI ATAS SUBSTRAT SAPPHIRE (0006) DENGAN METODE MOCVD BERBANTUAN PLASMA. Telah ditumbuhkan film tipis InXGa1-XN di atas substrat sapphire (0006) dengan metode MOCVD berbantuan plasma. Penumbuhan dilakukan pada suhu 650 oC dengan variasi komposisi uap TMIn (xv) sebesar 10 %, 20 %, 30 %, 50 % dan 100 %. Hasil analisis XRD menunjukkan fenomena pemisahan fasa yang disebabkan oleh ketidaksesuaian kisi antara InN dan GaN pada film InX1-XN dengan komposisi padatan indium (In) 0,02 dan 0,18. Proses nukleasi masih terjadi pada film-film ini, dimana tingkat kekasaran relatif masih tinggi sekitar 150 nm. Film dengan komposisi padatan indium (x) 0,28 dan 0,61 menunjukkan adanya kecendurungan fasa tunggal pada InGaN (0002). Mekanisme penggabungan (coalescence) grain terjadi pada film-film ini dengan ditandai oleh ekspansi grain secara lateral. Hal ini menyebabkan tingkat kekasaran permukaan relatif lebih rendah sekitar 100 nm