1 research outputs found
Highly Efficient Charge Separation and Collection across in Situ Doped Axial VLS-Grown Si Nanowire p–n Junctions
VLS-grown semiconductor nanowires have emerged as a viable
prospect
for future solar-based energy applications. In this paper, we report
highly efficient charge separation and collection across in situ doped
Si p–n junction nanowires with a diameter <100 nm grown
in a cold wall CVD reactor. Our photoexcitation measurements indicate
an internal quantum efficiency of ∼50%, whereas scanning photocurrent
microscopy measurements reveal effective minority carrier diffusion
lengths of ∼1.0 μm for electrons and 0.66 μm for
holes for as-grown Si nanowires (<i>d</i><sub>NW</sub> ≈
65–80 nm), which are an order of magnitude larger than those
previously reported for nanowires of similar diameter. Further analysis
reveals that the strong suppression of surface recombination is mainly
responsible for these relatively long diffusion lengths, with surface
recombination velocities (S) calculated to be 2 orders of magnitude
lower than found previously for as-grown nanowires, all of which used
hot wall reactors. The degree of surface passivation achieved in our
as-grown nanowires is comparable to or better than that achieved for
nanowires in prior studies at significantly larger diameters. We suggest
that the dramatically improved surface recombination velocities may
result from the reduced sidewall reactions and deposition in our cold
wall CVD reactor