Ab initio calculations for bromine adlayers on the Ag(100) and Au(100) surfaces: the c(2x2) structure

Ab initio total-energy density-functional methods with supercell models have been employed to calculate the c(2x2) structure of the Br-adsorbed Ag(100) and Au(100) surfaces. The atomic geometries of the surfaces and the preferred bonding sites of the bromine have been determined. The bonding character of bromine with the substrates has also been studied by analyzing the electronic density of states and the charge transfer. The calculations show that while the four-fold hollow-site configuration is more stable than the two-fold bridge-site topology on the Ag(100) surface, bromine prefers the bridge site on the Au(100) surface. The one-fold on-top configuration is the least stable configuration on both surfaces. It is also observed that the second layer of the Ag substrate undergoes a small buckling as a consequence of the adsorption of Br. Our results provide a theoretical explanation for the experimental observations that the adsorption of bromine on the Ag(100) and Au(100) surfaces results in different bonding configurations.Comment: 10 pages, 4 figure, 5 tables, Phys. Rev. B, in pres

Growth and properties of strained VOx thin films with controlled stoichiometry

We have succeeded in growing epitaxial films of rocksalt VOx on MgO(001) substrates. The oxygen content as a function of oxygen flux was determined using 18O2-RBS and the vanadium valence using XAS. The upper and lower stoichiometry limits found are similar to the ones known for bulk material (0.8<x<1.3). From the RHEED oscillation period a large number of vacancies for both vanadium and oxygen were deduced, i.e. ~16% for stoichiometric VO. These numbers are, surprisingly, very similar to those for bulk material and consequently quite strain-insensitive. XAS measurements reveal that the vacancies give rise to strong low symmetry ligand fields to be present. The electrical conductivity of the films is much lower than the conductivity of bulk samples which we attribute to a decrease in the direct overlap between t2g orbitals in the coherently strained layers. The temperature dependence of the conductivity is consistent with a variable range hopping mechanism.Comment: 12 pages, 16 figures included, revised versio