Suppression of Parasitic Nonlinear Processes in Spontaneous Four-Wave Mixing with Linearly Uncoupled Resonators

We report on a signal-to-noise ratio characterizing the generation of identical photon pairs of more than 4 orders of magnitude in a ring resonator system. Parasitic noise, associated with single-pump spontaneous four-wave mixing, is essentially eliminated by employing a novel system design involving two resonators that are linearly uncoupled but nonlinearly coupled. This opens the way to a new class of integrated devices exploiting the unique properties of identical photon pairs in the same optical mode

Extensive superior limbic keratoconjunctivitis in Graves’ disease: case report and mini-review of the literature

Elias Chelala, Hala El Rami, Ali Dirani, Henry Fakhoury, Ali Fadlallah Faculty of Medicine, Saint-Joseph University, Beirut, Lebanon Background: Superior limbic keratoconjunctivitis (SLK) is characterized as an inflammation of the superior bulbar conjunctiva with predominant involvement of the superior limbus and adjacent epithelial keratitis.Methods: A 51-year-old woman, with a history of medically controlled Graves’ disease was seen with an extensive SLK involving 5 mm of the superior cornea.Results: Total remission was observed with topical steroids (DXM). Recurrence was observed 1 week after steroid discontinuation, and steroidal treatment was reintroduced with tapering over 1 month. Total remission was then observed for 1 year. Conclusion: Extensive keratitis and vascular pannus in SLK is rarely reported. This form could be treated with topical steroids. Tapering treatment remains essential for long-term success. Keywords: superior limbic keratoconjunctivitis, anti-inflammatory drugs, dexamethasone, triamcinolone, Graves’ diseas

Novel FDSOI band-modulation device: Z 2 -FET with Dual Ground Planes

session A5L-C: Novel DevicesInternational audienceA novel sharp switching Z 2 -FET DGP device (Zero Impact Ionization and Zero Subthreshold Slope FET with Dual Ground Planes) relying on band modulation mechanism is presented in this paper. The device is fabricated in the most advanced FDSOI (Fully Depleted SOI) technology with Ultra-Thin Body and Buried Oxide (UTBB). The Z 2 -FET DGP is an upgraded version of Z 2 -FET. It features sharp on-switch, adjustable triggering voltage (Vt1), and wide hysteresis useful for 1T-DRAM memory

Sharp-switching Z²-FET device in 14 nm FDSOI technology

session C2L-E: Advanced CMOS Device and TechnologyInternational audienceZ 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a very recent sharp switching device which achieves remarkable performance in terms of leakage current and triggering control. The device is fabricated with Ultra-Thin Body and Buried Oxide (UTBB) Silicon-On-Insulator (SOI) technology, features an extremely sharp on-switch, an adjustable triggering voltage (V ON ), and can be considered for Electro-Static Discharge (ESD). The operation of our device relies on the modulation of electrons and holes injection barriers. In this paper, we show, for the first time, experimental data obtained on the 14 nm FDSOI (Fully Depleted SOI) node

Plasma etching processes for the fabrication of a low-loss SiN micro-resonator and low power threshold of parametric oscillations

International audienc

Sharp switching, hysteresis-free characteristics of Z 2 -FET for fast logic applications

session A4L-F: Emerging Devices and ApplicationsInternational audienceA logic switch for integrated circuits is demonstrated experimentally in advanced FDSOI (Fully Depleted SOI). The Z 2 -FET (Zero Impact Ionization and Zero Subthreshold Slope FET) is a band-modulation device that shows remarkable performance in terms of ON/OFF current ratio and sharp switch (~ 1 mV/decade). The Z 2 -FET capability for ESD protection and capacitorless DRAM has already been documented. However, the presence of an inherent hysteresis effect has inhibited so far fast logic applications. A new generation of Z 2 -FETs with single or dual ground-plane has been fabricated with Ultra-Thin Body and Buried Oxide (UTBB) SOI technology. We demonstrate that fast pulses on the gate result in hysteresis-free switching: the device turns ON and OFF at same gate bias. Systematic measurements reveal the key roles of the device parameters and bias on the speed of operation

High-yield ultra-low losses Si3N4 micro-resonators for energy-efficient nonlinear photonics

International audienc

Nonlinear properties of ultra-low losses hydrogen-annealed submicron silicon waveguides

International audienc

A sharp-switching gateless device (Z3-FET) in advanced FDSOI technology

session 9: Advanced Devices ad Three-Dimensional IntegrationInternational audienceA systematic study of a novel band modulation device (Z3-FET: Zero gate, Zero swing slope and Zero impact ionization) fabricated in most advanced Fully Depleted Silicon-On-Insulator technology is presented. Since the device has no front gate, the operation mechanism is controlled by two buried ground planes. Characteristics such as sharp switching, low leakage, and controllable triggering are measured and discussed. We explore several variants (thin and thick silicon film) and show promising results in terms of high current and switching performance