Non-universal transmission phase behaviour of a large quantum dot

The electron wave function experiences a phase modification at coherent transmission through a quantum dot. This transmission phase undergoes a characteristic shift of $\pi$ when scanning through a Coulomb-blockade resonance. Between successive resonances either a transmission phase lapse of $\pi$ or a phase plateau is theoretically expected to occur depending on the parity of the corresponding quantum dot states. Despite considerable experimental effort, this transmission phase behaviour has remained elusive for a large quantum dot. Here we report on transmission phase measurements across such a large quantum dot hosting hundreds of electrons. Using an original electron two-path interferometer to scan the transmission phase along fourteen successive resonances, we observe both phase lapses and plateaus. Additionally, we demonstrate that quantum dot deformation alters the sequence of transmission phase lapses and plateaus via parity modifications of the involved quantum dot states. Our findings set a milestone towards a comprehensive understanding of the transmission phase of quantum dots.Comment: Main paper: 18 pages, 5 figures, Supplementary materials: 8 pages, 4 figure

Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths

We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs

Sequential and co-tunneling behavior in the temperature-dependent thermopower of few-electron quantum dots

We have studied the temperature dependent thermopower of gate-defined, lateral quantum dots in the Coulomb blockade regime using an electron heating technique. The line shape of the thermopower oscillations depends strongly on the contributing tunneling processes. Between 1.5 K and 40 mK a crossover from a pure sawtooth- to an intermitted sawtooth-like line shape is observed. The latter is attributed to the increasing dominance of cotunneling processes in the Coulomb blockade regime at low temperatures.Comment: 4 pages, 4 figures, submitted to Phys. Rev.

Spin photocurrents and circular photon drag effect in (110)-grown quantum well structures

We report on the study of spin photocurrents in (110)-grown quantum well structures. Investigated effects comprise the circular photogalvanic effect and so far not observed circular photon drag effect. The experimental data can be described by an analytical expression derived from a phenomenological theory. A microscopic model of the circular photon drag effect is developed demonstrating that the generated current has spin dependent origin.Comment: 6 pages, 3 figure

0.7-anomaly and magnetotransport of disordered quantum wires

The unexpected "0.7" plateau of conductance quantisation is usually observed for ballistic one-dimensional devices. In this work we study a quasi-ballistic quantum wire, for which the disorder induced backscattering reduces the conductance quantisation steps. We find that the transmission probability resonances coexist with the anomalous plateau. The studies of these resonances as a function of the in-plane magnetic field and electron density point to the presence of spin polarisation at low carrier concentrations and constitute a method for the determination of the effective g-factor suitable for disordered quantum wires.Comment: 4 pages, 6 figure

The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.Comment: 9 pages, 4 figure

Wafer-scale epitaxial modulation of quantum dot density

Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/µm2 and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer