26,402 research outputs found

    Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

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    Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance

    Silicon solar cell process development, fabrication, and analysis

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    Two large cast ingots were evaluated. Solar cell performance versus substrate position within the ingots was obtained and the results are presented. Dendritic web samples were analyzed in terms of structural defects, and efforts were made to correlate the data with the performance of solar cells made from the webs

    Silicon solar cell process development, fabrication and analysis

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    Solar cells were fabricated from EFG ribbons dendritic webs, cast ingots by heat exchanger method, and cast ingots by ubiquitous crystallization process. Baseline and other process variations were applied to fabricate solar cells. EFG ribbons grown in a carbon-containing gas atmosphere showed significant improvement in silicon quality. Baseline solar cells from dendritic webs of various runs indicated that the quality of the webs under investigation was not as good as the conventional CZ silicon, showing an average minority carrier diffusion length of about 60 um versus 120 um of CZ wafers. Detail evaluation of large cast ingots by HEM showed ingot reproducibility problems from run to run and uniformity problems of sheet quality within an ingot. Initial evaluation of the wafers prepared from the cast polycrystalline ingots by UCP suggested that the quality of the wafers from this process is considerably lower than the conventional CZ wafers. Overall performance was relatively uniform, except for a few cells which showed shunting problems caused by inclusions

    Scalability study of solid xenon

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    We report a demonstration of the scalability of optically transparent xenon in the solid phase for use as a particle detector above a kilogram scale. We employed a cryostat cooled by liquid nitrogen combined with a xenon purification and chiller system. A modified {\it Bridgeman's technique} reproduces a large scale optically transparent solid xenon.Comment: arXiv admin note: substantial text overlap with arXiv:1410.649

    Double-Well Potential : The WKB Approximation with Phase Loss and Anharmonicity Effect

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    We derive a general WKB energy splitting formula in a double-well potential by incorporating both phase loss and anharmonicity effect in the usual WKB approximation. A bare application of the phase loss approach to the usual WKB method gives better results only for large separation between two potential minima. In the range of substantial tunneling, however, the phase loss approach with anharmonicity effect considered leads to a great improvement on the accuracy of the WKB approximation.Comment: 14 pages, revtex, 1 figure, will appear at Phys. Rev.

    Complex microwave conductivity of Na-DNA powders

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    We report the complex microwave conductivity, σ=σ1iσ2\sigma=\sigma_1-i\sigma_2, of Na-DNA powders, which was measured from 80 K to 300 K by using a microwave cavity perturbation technique. We found that the magnitude of σ1\sigma_1 near room temperature was much larger than the contribution of the surrounding water molecules, and that the decrease of σ1\sigma_1 with decreasing temperature was sufficiently stronger than that of the conduction of counterions. These results clearly suggest that the electrical conduction of Na-DNA is intrinsically semiconductive.Comment: 16 pages, 7 figure

    Complete Treatment of Galaxy Two-Point Statistics: Gravitational Lensing Effects and Redshift-Space Distortions

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    We present a coherent theoretical framework for computing gravitational lensing effects and redshift-space distortions in an inhomogeneous universe and investigate their impacts on galaxy two-point statistics. Adopting the linearized FRW metric, we derive the gravitational lensing and the generalized Sachs-Wolfe effects that include the weak lensing distortion, magnification, and time delay effects, and the redshift-space distortion, Sachs-Wolfe, and integrated Sachs-Wolfe effects, respectively. Based on this framework, we first compute their effects on observed source fluctuations, separating them as two physically distinct origins: the volume effect that involves the change of volume and is always present in galaxy two-point statistics, and the source effect that depends on the intrinsic properties of source populations. Then we identify several terms that are ignored in the standard method, and we compute the observed galaxy two-point statistics, an ensemble average of all the combinations of the intrinsic source fluctuations and the additional contributions from the gravitational lensing and the generalized Sachs-Wolfe effects. This unified treatment of galaxy two-point statistics clarifies the relation of the gravitational lensing and the generalized Sachs-Wolfe effects to the metric perturbations and the underlying matter fluctuations. For near future dark energy surveys, we compute additional contributions to the observed galaxy two-point statistics and analyze their impact on the anisotropic structure. Thorough theoretical modeling of galaxy two-point statistics would be not only necessary to analyze precision measurements from upcoming dark energy surveys, but also provide further discriminatory power in understanding the underlying physical mechanisms.Comment: 20 pages, 5 figures, Fig.4 corrected, appendix added, accepted for publication in Physical Review
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