Current versus voltage characteristics of GaN/AlGaN/GaN double heterostructures with varying AlGaN thickness and composition under hydrostatic pressure

We have studied current versus voltage characteristics of n-GaN∕u-AlGaN∕n-GaN double heterostructure devices under hydrostatic pressure up to 500MPa. Devices were grown on c-plane sapphire substrates by organometallic vapor phase epitaxy using epitaxial layer overgrowth. The effect of AlGaN layer thickness and composition on the pressure sensitivity was investigated. For a fixed applied bias, we found that the current decreases approximately linearly in magnitude with increasing hydrostatic pressure over the range of voltages and pressures applied. The decrease in current magnitude can be attributed to piezoelectric effects and is consistent with model calculations. The polarizationcharge densities at the GaN∕AlGaN interfaces change with hydrostatic pressure, which in turn modifies the internal potential barrier. Changes in the AlGaN layer thickness and composition also modify the interfacial polarization, with thicker AlGaN layers and higher AlN content increasing the effect of pressure on the observed current versus voltage characteristics. The strain gauge factors obtained for these devices range from ∼200 to 800

Stability Of Plasma Configurations During Compression

Magnetized Target Fusion (MTF) efforts are based on calculations showing that the addition of a closed magnetic field reduces the driver pressure and rise time requirements for inertial confinement fusion by reducing thermal conductivity. Instabilities that result in convective bulk transport at the Alphen time scale are of particular concern since they are much faster than the implosion time. Such instabilities may occur during compression due to, for example, an increase in the plasma-magnetic pressure ratio {beta} or, in the case of a rotating plasma, spin-up due to angular momentum conservation. Details depend on the magnetic field topology and compression geometry. A hard core z pinch with purely azimuthal magnetic field can theoretically be made that relaxes into a wall supported diffuse profile satisfying the Kadomtsev criterion for the stability of m = 0 modes, which is theoretically preserved during cylindrical outer wall compression. The center conductor radius and current must also be large enough to keep the {beta} below stability limits to stabilize modes with m > 0. The stability of m > 0 modes actually improves during compression. A disadvantage of this geometry, though, is plasma contact with the solid boundaries. In addition to the risk of high Z impurity contamination during the (turbulent) relaxation process, contact thereafter can cause plasma pressure near the outer surface to drop, violating the Kadomtsev criterion locally. The resultant m = 0 instability can then convect impurities inward. Also, the center conductor (which is not part of the Kadomtsev profile) can go m = 0 unstable, convecting impurities outward. One way to mitigate impurity convection is to instead use a Woltjer-Taylor minimum magnetic energy configuration (spheromak). The sheared magnetic field inhibits convection, and the need for the center conductor is eliminated. The plasma, however, would likely still have to be wall supported due to unfavorable {beta} scaling during quasispherical (3-D) compression otherwise. Use of a Field Reversed Configuration (FRC) substantially resolves the wall contact issue, but at the cost of introducing a new (rotational) instability. An FRC has an open magnetic field outside a separatrix which effectively diverts wall material. However, FRC particles diffusing across the separatrix have a preferred angular momentum, causing the FRC within to counter-rotate in response. When the FRC's rotational-diamagnetic drift frequency ratio {alpha} reaches a critical value of order unity, the FRC undergoes a rotational instability that results in rapid particle loss. The instability is exacerbated by cylindrical compression since {beta} {approx} R{sup -2/5} during this phase, assuming angular momentum conservation. A multipole magnetic field frozen into the solid liner during compression may stabilize this mode directly and/or by impeding spin-up without significantly perturbing the implosion's azimuthal symmetry

Spontaneous Interlayer Charge Transfer near the Magnetic Quantum Limit

Experiments reveal that a confined electron system with two equally-populated layers at zero magnetic field can spontaneously break this symmetry through an interlayer charge transfer near the magnetic quantum limit. New fractional quantum Hall states at unusual total filling factors such as \nu = 11/15 (= 1/3 + 2/5) stabilize as signatures that the system deforms itself, at substantial electrostatic energy cost, in order to gain crucial correlation energy by "locking in" separate incompressible liquid phases at unequal fillings in the two layers (e.g., layered 1/3 and 2/5 states in the case of \nu = 11/15).Comment: 4 pages, 4 figures (1 color) included in text. Related papers at http://www.ee.princeton.edu/~hari/papers.htm

Cyclotron effective mass of 2D electron layer at GaAs/AlGaAs heterojunction subject to in-plane magnetic fields

We have found that Fermi contours of a two-dimensional electron gas at \rmGaAs/Al_xGa_{1-x}As interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measured by the cyclotron resonance in the far-infrared transmission spectra and by the thermal damping of Shubnikov-de Haas oscillations in tilted magnetic fields with an in-plane component up to 5 T. The observed increase of the cyclotron effective mass reaches almost 5 \% of its zero field value which is in good agreement with results of a self-consistent calculation.Comment: 4 pages, Revtex, figures can be obtained on request from [email protected]; to appear in Phys. Rev. B (in press). No changes, the corrupted submission replace

CloudAligner: A fast and full-featured MapReduce based tool for sequence mapping

<p>Abstract</p> <p>Background</p> <p>Research in genetics has developed rapidly recently due to the aid of next generation sequencing (NGS). However, massively-parallel NGS produces enormous amounts of data, which leads to storage, compatibility, scalability, and performance issues. The Cloud Computing and MapReduce framework, which utilizes hundreds or thousands of shared computers to map sequencing reads quickly and efficiently to reference genome sequences, appears to be a very promising solution for these issues. Consequently, it has been adopted by many organizations recently, and the initial results are very promising. However, since these are only initial steps toward this trend, the developed software does not provide adequate primary functions like bisulfite, pair-end mapping, etc., in on-site software such as RMAP or BS Seeker. In addition, existing MapReduce-based applications were not designed to process the long reads produced by the most recent second-generation and third-generation NGS instruments and, therefore, are inefficient. Last, it is difficult for a majority of biologists untrained in programming skills to use these tools because most were developed on Linux with a command line interface.</p> <p>Results</p> <p>To urge the trend of using Cloud technologies in genomics and prepare for advances in second- and third-generation DNA sequencing, we have built a Hadoop MapReduce-based application, CloudAligner, which achieves higher performance, covers most primary features, is more accurate, and has a user-friendly interface. It was also designed to be able to deal with long sequences. The performance gain of CloudAligner over Cloud-based counterparts (35 to 80%) mainly comes from the omission of the reduce phase. In comparison to local-based approaches, the performance gain of CloudAligner is from the partition and parallel processing of the huge reference genome as well as the reads. The source code of CloudAligner is available at <url>http://cloudaligner.sourceforge.net/</url> and its web version is at <url>http://mine.cs.wayne.edu:8080/CloudAligner/.</url></p> <p>Conclusions</p> <p>Our results show that CloudAligner is faster than CloudBurst, provides more accurate results than RMAP, and supports various input as well as output formats. In addition, with the web-based interface, it is easier to use than its counterparts.</p

Exchange Instabilities in Semiconductor Double Quantum Well Systems

We consider various exchange-driven electronic instabilities in semiconductor double-layer systems in the absence of any external magnetic field. We establish that there is no exchange-driven bilayer to monolayer charge transfer instability in the double-layer systems. We show that, within the unrestricted Hartree-Fock approximation, the low density stable phase (even in the absence of any interlayer tunneling) is a quantum ``pseudospin rotated'' spontaneous interlayer phase coherent spin-polarized symmetric state rather than the classical Ising-like charge-transfer phase. The U(1) symmetry of the double quantum well system is broken spontaneously at this low density quantum phase transition, and the layer density develops quantum fluctuations even in the absence of any interlayer tunneling. The phase diagram for the double quantum well system is calculated in the carrier density--layer separation space, and the possibility of experimentally observing various quantum phases is discussed. The situation in the presence of an external electric field is investigated in some detail using the spin-polarized-local-density-approximation-based self-consistent technique and good agreement with existing experimental results is obtained.Comment: 24 pages, figures included. Also available at http://www-cmg.physics.umd.edu/~lzheng/preprint/ct.uu/ . Revised final version to appear in PR

Effect of hydrostatic pressure on the current-voltage characteristics of GaN∕AlGaN∕GaN heterostructure devices

The current-voltage characteristics of n-GaN∕u-AlGaN∕n-GaN heterostructure devices are investigated for potential pressure sensor applications. Model calculations suggest that the current decreases with pressure as a result of the piezoelectric effect, and this effect becomes more significant with thicker AlGaN layers and increasing AlN composition. The change in current with pressure is shown to be highly sensitive to the change in interfacial polarization charge densities. The concept is verified by measuring the current versus voltage characteristics of an n-GaN∕u-Al0.2Ga0.8N∕n-GaN device under hydrostatic pressure over the range of 0–5 kbars. The measured current is found to decrease approximately linearly with applied pressure in agreement with the model results. A gauge factor, which is defined as the relative change in current divided by the in-plane strain, approaching 500 is extracted from the data, demonstrating the considerable potential of these devices for pressure sensing applications