80 research outputs found

    Towards Communication-Efficient Quantum Oblivious Key Distribution

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    Oblivious Transfer, a fundamental problem in the field of secure multi-party computation is defined as follows: A database DB of N bits held by Bob is queried by a user Alice who is interested in the bit DB_b in such a way that (1) Alice learns DB_b and only DB_b and (2) Bob does not learn anything about Alice's choice b. While solutions to this problem in the classical domain rely largely on unproven computational complexity theoretic assumptions, it is also known that perfect solutions that guarantee both database and user privacy are impossible in the quantum domain. Jakobi et al. [Phys. Rev. A, 83(2), 022301, Feb 2011] proposed a protocol for Oblivious Transfer using well known QKD techniques to establish an Oblivious Key to solve this problem. Their solution provided a good degree of database and user privacy (using physical principles like impossibility of perfectly distinguishing non-orthogonal quantum states and the impossibility of superluminal communication) while being loss-resistant and implementable with commercial QKD devices (due to the use of SARG04). However, their Quantum Oblivious Key Distribution (QOKD) protocol requires a communication complexity of O(N log N). Since modern databases can be extremely large, it is important to reduce this communication as much as possible. In this paper, we first suggest a modification of their protocol wherein the number of qubits that need to be exchanged is reduced to O(N). A subsequent generalization reduces the quantum communication complexity even further in such a way that only a few hundred qubits are needed to be transferred even for very large databases.Comment: 7 page

    Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma

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    The characteristics of isotropic etching of silicon in a purely inductively coupled SF plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500 m were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27 m/min. Arrays of narrow trenches ranging from 8 to 28 m were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF⁠

    Can a Lamb Reach a Haven Before Being Eaten by Diffusing Lions?

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    We study the survival of a single diffusing lamb on the positive half line in the presence of N diffusing lions that all start at the same position L to the right of the lamb and a haven at x=0. If the lamb reaches this haven before meeting any lion, the lamb survives. We investigate the survival probability of the lamb, S_N(x,L), as a function of N and the respective initial positions of the lamb and the lions, x and L. We determine S_N(x,L) analytically for the special cases of N=1 and N--->oo. For large but finite N, we determine the unusual asymptotic form whose leading behavior is S_N(z)\simN^{-z^2}, with z=x/L. Simulations of the capture process very slowly converge to this asymptotic prediction as N reaches 10^{500}.Comment: 13 pages, 6 figures, IOP format; v2: small changes in response to referee and editor comment

    Partial uterine perforation and ovarian embedment of misplaced intrauterine device: a case report

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    Intrauterine devices (IUDs) are the commonest form of contraceptive method in use globally. IUDs like other methods of contraception may be associated with its own complications. The major risk includes uterine perforation with embedment, migration, and/or expulsion. A 35 year old female who had a history of postpartum IUD insertion 10 years ago was referred to our institute with complains of severe lower abdominal pain and vomiting since 10 days. Transabdominal and transvaginal ultrasound (TAS/TVS) were done. Ultrasound led to the final diagnosis of ovarian embedment of the IUD. Laparotomy with IUD removal was successfully performed. This case report highlights one of the rare complications of IUD migrating to the left ovary in a patient presenting with lower abdominal pain. In a patient with history an IUD insertion in situ, lower abdominal pain and missing threads on examination should wary the gynaecologist to the possibility of total or partial transmigration of the device into the pelvis or abdomen

    Air-clad suspended nanocrystalline diamond ridge waveguides

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    A hybrid group IV ridge waveguide platform is demonstrated, with potential application across the optical spectrum from ultraviolet to the far infrared wavelengths. The waveguides are fabricated by partial etching of sub-micron ridges in a nanocrystalline diamond thin film grown on top of a silicon wafer. To create vertical confinement, the diamond film is locally undercut by exposing the chip to an isotropic fluorine plasma etch via etch holes surrounding the waveguides, resulting in a mechanically stable suspended air-clad waveguide platform. Optical characterization of the waveguides at 1550 nm yields an average optical loss of 4.67 ± 0.47 dB/mm. Further improvement to the fabrication process is expected to significantly reduce this waveguide loss

    Hybrid diamond/silicon suspended integrated photonic platform using SF6 isotropic etching

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    A hybrid diamond/silicon air-clad ridge waveguide platform is demonstrated. The air-clad structure coupled with the wide transmission window of diamond can allow for the use of this architecture over a large wavelength range, especially for the longer infrared wavelengths. In order to provide vertical confinement, the silicon substrate was isotropically etched using S F6 plasma to create undercut diamond films. An in-depth analysis of the etch characteristics of this process was performed to highlight its potential to replace wet isotropic etching or XeF 2 isotropic vapour phase etching techniques. The performance of the waveguide at 1550 nm was measured, and yielded an average loss of 4.67 +/- 0.47 dB/mm
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