41,178 research outputs found
State space collapse and diffusion approximation for a network operating under a fair bandwidth sharing policy
We consider a connection-level model of Internet congestion control,
introduced by Massouli\'{e} and Roberts [Telecommunication Systems 15 (2000)
185--201], that represents the randomly varying number of flows present in a
network. Here, bandwidth is shared fairly among elastic document transfers
according to a weighted -fair bandwidth sharing policy introduced by Mo
and Walrand [IEEE/ACM Transactions on Networking 8 (2000) 556--567] []. Assuming Poisson arrivals and exponentially distributed document
sizes, we focus on the heavy traffic regime in which the average load placed on
each resource is approximately equal to its capacity. A fluid model (or
functional law of large numbers approximation) for this stochastic model was
derived and analyzed in a prior work [Ann. Appl. Probab. 14 (2004) 1055--1083]
by two of the authors. Here, we use the long-time behavior of the solutions of
the fluid model established in that paper to derive a property called
multiplicative state space collapse, which, loosely speaking, shows that in
diffusion scale, the flow count process for the stochastic model can be
approximately recovered as a continuous lifting of the workload process.Comment: Published in at http://dx.doi.org/10.1214/08-AAP591 the Annals of
Applied Probability (http://www.imstat.org/aap/) by the Institute of
Mathematical Statistics (http://www.imstat.org
Study of 0- phase transition in hybrid superconductor-InSb nanowire quantum dot devices
Hybrid superconductor-semiconducting nanowire devices provide an ideal
platform to investigating novel intragap bound states, such as the Andreev
bound states (ABSs), Yu-Shiba-Rusinov (YSR) states, and the Majorana bound
states. The competition between Kondo correlations and superconductivity in
Josephson quantum dot (QD) devices results in two different ground states and
the occurrence of a 0- quantum phase transition. Here we report on
transport measurements on hybrid superconductor-InSb nanowire QD devices with
different device geometries. We demonstrate a realization of continuous
gate-tunable ABSs with both 0-type levels and -type levels. This allow us
to manipulate the transition between 0 and junction and explore charge
transport and spectrum in the vicinity of the quantum phase transition regime.
Furthermore, we find a coexistence of 0-type ABS and -type ABS in the same
charge state. By measuring temperature and magnetic field evolution of the
ABSs, the different natures of the two sets of ABSs are verified, being
consistent with the scenario of phase transition between the singlet and
doublet ground state. Our study provides insights into Andreev transport
properties of hybrid superconductor-QD devices and sheds light on the crossover
behavior of the subgap spectrum in the vicinity of 0- transition
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A novel element upstream of the Vgamma2 gene in the murine T cell receptor gamma locus cooperates with the 3 enhancer to act as a locus control region.
Transgenic expression constructs were employed to identify a cis-acting transcription element in the T cell receptor (TCR)-gamma locus, called HsA, between the Vgamma5 and Vgamma2 genes. In constructs lacking the previously defined enhancer (3E(Cgamma1)), HsA supports transcription in mature but not immature T cells in a largely position-independent fashion. 3E(Cgamma1), without HsA, supports transcription in immature and mature T cells but is subject to severe position effects. Together, the two elements support expression in immature and mature T cells in a copy number-dependent, position-independent fashion. Furthermore, HsA was necessary for consistent rearrangement of transgenic recombination substrates. These data suggest that HsA provides chromatin-opening activity and, together with 3E(Cgamma1), constitutes a T cell-specific locus control region for the TCR-gamma locus
Modulation of the Curie Temperature in Ferromagnetic/Ferroelectric Hybrid Double Quantum Wells
We propose a ferromagnetic/ferroelectric hybrid double quantum well
structure, and present an investigation of the Curie temperature (Tc)
modulation in this quantum structure. The combined effects of applied electric
fields and spontaneous electric polarization are considered for a system that
consists of a Mn \delta-doped well, a barrier, and a p-type ferroelectric well.
We calculate the change in the envelope functions of carriers at the lowest
energy sub-band, resulting from applied electric fields and switching the
dipole polarization. By reversing the depolarizing field, we can achieve two
different ferromagnetic transition temperatures of the ferromagnetic quantum
well in a fixed applied electric field. The Curie temperature strongly depends
on the position of the Mn \delta-doped layer and the polarization strength of
the ferroelectric well.Comment: 9 pages, 5 figures, to be published in Phys. Rev. B (2006) minor
revision: One of the line types is changed in Fig.
Schottky barrier and contact resistance of InSb nanowire field effect transistors
Understanding of the electrical contact properties of semiconductor nanowire
(NW) field effect transistors (FETs) plays a crucial role in employing
semiconducting NWs as building blocks for future nanoelectronic devices and in
the study of fundamental physics problems. Here, we report on a study of the
contact properties of Ti/Au, a widely used contact metal combination, to
individual InSb NWs via both two-probe and four-probe transport measurements.
We show that a Schottky barrier of height is
present at the metal-InSb NW interfaces and its effective height is gate
tunable. The contact resistance () in the InSb NWFETs is also
analyzed by magnetotransport measurements at low temperatures. It is found that
at on-state exhibits a pronounced magnetic field dependent
feature, namely it is increased strongly with increasing magnetic field after
an onset field . A qualitative picture that takes into account
magnetic depopulation of subbands in the NWs is provided to explain the
observation. Our results provide a solid experimental evidence for the presence
of a Schottky barrier at Ti/Au-InSb NW interfaces and can be used as a basis
for design and fabrication of novel InSb NW based nanoelectronic devices and
quantum devices.Comment: 12 pages, 4 figure
Gender Differences in Response to a School-Based Mindfulness Training Intervention for Early Adolescents
Mindfulness training has been used to improve emotional wellbeing in early adolescents. However, little is known about treatment outcome moderators, or individual differences that may differentially impact responses to treatment. The current study focused on gender as a potential moderator for affective outcomes in response to school-based mindfulness training. Sixth grade students (N = 100) were randomly assigned to either the six weeks of mindfulness meditation or the active control group as part of a history class curriculum. Participants in the mindfulness meditation group completed short mindfulness meditation sessions four to five times per week, in addition to didactic instruction (Asian history). The control group received matched experiential activity in addition to didactic instruction (African history) from the same teacher with no meditation component. Self-reported measures of emotional wellbeing/affect, mindfulness, and self-compassion were obtained at pre and post intervention. Meditators reported greater improvement in emotional wellbeing compared to those in the control group. Importantly, gender differences were detected, such that female meditators reported greater increases in positive affect compared to females in the control group, whereas male meditators and control males displayed equivalent gains. Uniquely among females but not males, increases in self-reported self-compassion were associated with improvements in affect. These findings support the efficacy of school-based mindfulness interventions, and interventions tailored to accommodate distinct developmental needs of female and male adolescents
High current-carrying capability in c-axis-oriented superconducting MgB2 thin films
In high-quality c-axis-oriented MgB2 thin films, we observed high critical
current densities (Jc) of 16 MA/cm^2 at 15 K under self fields comparable to
those of cuprate high-temperature superconductors. The extrapolated value of Jc
at 5 K was estimated to be 40 MA/cm^2. For a magnetic field of 5 T, a Jc of 0.1
MA/cm^2 was detected at 15 K, suggesting that this compound would be a very
promising candidate for practical applications at high temperature and lower
power consumption. The vortex-glass phase is considered to be a possible
explanation for the observed high current-carrying capability.Comment: 3 pages and 4 figures, to be published in Physical Review Letter
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