Further Precise Determinations of αs\alpha_s from Lattice QCD

We present a new determination of the strong coupling constant from lattice QCD simulations. We use four different short-distance quantities to obtain the coupling, three different (infrared) meson splittings to tune the simulation parameters, and a wide range of lattice spacings, quark masses, and lattice volumes to test for systematic errors. Our final result consists of ten different determinations of $\alpha^{(3)}_{P}(8.2 GeV)$, which agree well with each other and with our previous results. The most accurate of these, when evolved perturbatively to the $Z^0$ mass, gives \alpha^{(5)}_{\msbar}(M_Z) = .1174(24). We compare our results with those obtained from other recent lattice simulations.Comment: 24 pages, LaTe

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve doping densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process.Comment: 22 pages, 6 figures, submitted to JA

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.Comment: 4 pages, 6 figure

Monotherapy with major antihypertensive drug classes and risk of hospital admissions for mood disorders

Major depressive and bipolar disorders predispose to atherosclerosis, and there is accruing data from animal model, epidemiological, and genomic studies that commonly used antihypertensive drugs may have a role in the pathogenesis or course of mood disorders. In this study, we propose to determine whether antihypertensive drugs have an impact on mood disorders through the analysis of patients on monotherapy with different classes of antihypertensive drugs from a large hospital database of 525 046 patients with follow-up for 5 years. There were 144 066 eligible patients fulfilling the inclusion criteria: age 40 to 80 years old at time of antihypertensive prescription and medication exposure >90 days. The burden of comorbidity assessed by Charlson and Elixhauser scores showed an independent linear association with mood disorder diagnosis. The median time to hospital admission with mood disorder was 847 days for the 299 admissions (641 685 person-years of follow-up). Patients on angiotensin-converting enzyme inhibitors or angiotensin receptor blockers had the lowest risk for mood disorder admissions, and compared with this group, those on β-blockers (hazard ratio=2.11; [95% confidence interval, 1.12–3.98]; P=0.02) and calcium antagonists (2.28 [95% confidence interval, 1.13–4.58]; P=0.02) showed higher risk, whereas those on no antihypertensives (1.63 [95% confidence interval, 0.94–2.82]; P=0.08) and thiazide diuretics (1.56 [95% confidence interval, 0.65–3.73]; P=0.32) showed no significant difference. Overall, our exploratory findings suggest possible differential effects of antihypertensive medications on mood that merits further study: calcium antagonists and β-blockers may be associated with increased risk, whereas angiotensin-converting enzyme inhibitors and angiotensin receptor blockers may be associated with a decreased risk of mood disorders

New results on heavy hadron spectroscopy with NRQCD

We present results for the spectrum of b-bbar bound states in the quenched approximation for three different values of the lattice spacing. Results for spin-independent splittings are shown to have good scaling behaviour; spin-dependent splittings are more sensitive to discretisation effects. We discuss what needs to be done to match the experimental spectrum.Comment: 3 pages, contribution to Lattice'9

Low-Temperature Rapid Synthesis and Superconductivity of Fe-Based Oxypnictide Superconductors

we were able to develop a novel method to synthesize Fe-based oxypnictide superconductors. By using LnAs and FeO as the starting materials and a ball-milling process prior to solid-state sintering, Tc as high as 50.7 K was obtained with the sample of Sm 0.85Nd0.15FeAsO0.85F0.15 prepared by sintering at temperatures as low as 1173 K for times as short as 20 min.Comment: 2 pages,2 figures, 1 tabl

Magnetic and thermal properties of the S = 1/2 zig-zag spin-chain compound In2VO5

Static magnetic susceptibility \chi, ac susceptibility \chi_{ac} and specific heat C versus temperature T measurements on polycrystalline samples of In2VO5 and \chi and C versus T measurements on the isostructural, nonmagnetic compound In2TiO5 are reported. A Curie-Wiess fit to the \chi(T) data above 175 K for In2VO5 indicates ferromagnetic exchange between V^{4+} (S = 1/2) moments. Below 150 K the \chi(T) data deviate from the Curie-Weiss behavior but there is no signature of any long range magnetic order down to 1.8 K. There is a cusp at 2.8 K in the zero field cooled (ZFC) \chi(T) data measured in a magnetic field of 100 Oe and the ZFC and field cooled (FC) data show a bifurcation below this temperature. The frequency dependence of the \chi_{ac}(T) data indicate that below 3 K the system is in a spin-glass state. The difference \Delta C between the heat capacity of In2VO5 and In2TiO5 shows a broad anomaly peaked at 130 K. The entropy upto 300 K is more than what is expected for S = 1/2 moments. The anomaly in \Delta C and the extra entropy suggests that there may be a structural change below 130 K in In2VO5.Comment: 6 pages, 7 figures, 1 tabl

High superconducting anisotropy and weak vortex pinning in Co doped LaFeAsO

Here, we present an electrical transport study in single crystals of LaFe$_{0.92}$Co$_{0.08}$AsO ($T_c \simeq 9.1$ K) under high magnetic fields. In contrast to most of the previously reported Fe based superconductors, and despite its relatively low $T_c$, LaFe$_{1-x}$Co$_x$AsO shows a superconducting anisotropy which is comparable to those seen for instance in the cuprates or $\gamma_H = H_{c2}^{ab}/H_{c2}^{c} = m_c/m_{ab} \simeq 9$, where $m_c/m_{ab}$ is the effective mass anisotropy. Although, in the present case and as in all Fe based superconductors, $\gamma \rightarrow 1$ as $T \rightarrow 0$. Under the application of an external field, we also observe a remarkable broadening of the superconducting transition particularly for fields applied along the inter-planar direction. Both observations indicate that the low dimensionality of LaFe$_{1-x}$Co$_x$AsO is likely to lead to a more complex vortex phase-diagram when compared to the other Fe arsenides and consequently, to a pronounced dissipation associated with the movement of vortices in a possible vortex liquid phase. When compared to, for instance, F-doped compounds pertaining to same family, we obtain rather small activation energies for the motion of vortices. This suggests that the disorder introduced by doping LaFeAsO with F is more effective in pinning the vortices than alloying it with Co.Comment: 7 figures, 7 pages, Phys. Rev. B (in press

Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap, into which Phosphorus is implanted at a non-metallic dose corresponding to 10^17 cm^-3. By restricting this secondary implant to a 100 nm x 100 nm region, the EDMR signal from less than 100 donors is detected. This technique provides a pathway to the study of single donor spins in semiconductors, which is relevant to a number of proposals for quantum information processing.Comment: 9 pages, 3 figure