Complete microcrystalline p-i-n solar cell—Crystalline or amorphous cell behavior?

Complete µc-Si:H p-i-n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic µc-Si:H has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably high short circuit current densities of up to 21.9 mA/cm2 due to an enhanced absorption in the near-infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely µc-Si:H cells. Voltage-dependent spectral response measurements suggest that the carrier transport in complete µc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift)

Device grade microcrystalline silicon owing to reduced oxygen contamination

As-deposited undoped microcrystalline silicon (µc-Si:H) has in general a pronounced n-type behavior. Such a material is therefore often not appropriate for use in devices, such as p-i-n diodes, as an active, absorbing i layer or as channel material for thin-film transistors. In recent work, on p-i-n solar cells, this disturbing n-type character had been successfully compensated by the ``microdoping'' technique. In the present letter, it is shown that this n-type behavior is mainly linked to oxygen impurities; therefore, one can replace the technologically delicate microdoping technique by a purification method, that is much easier to handle. This results in a reduction of oxygen impurities by two orders of magnitude; it has, furthermore a pronounced impact on the electrical properties of µc-Si:H films and on device performance, as well. Additionally, these results prove that the unwanted donor-like states within µc-Si:H are mainly due to extrinsic impurities and not to structural native defects