Hooge's Constant of Carbon Nanotube Field Effect Transistors

The 1/f noise in individual semiconducting carbon nanotubes (s-CNT) in a field effect transistor configuration has been measured in ultra-high vacuum and following exposure to air. The amplitude of the normalized current spectral noise density is independent of source-drain current, indicating the noise is due to mobility rather than number fluctuations. Hooge's constant for s-CNT is found to be 9.3 plus minus 0.4x10^-3. The magnitude of the 1/f noise is substantially degreased by exposing the devices to air

Midgap states and charge inhomogeneities in corrugated graphene

We study the changes induced by the effective gauge field due to ripples on the low energy electronic structure of graphene. We show that zero energy Landau levels will form, associated to the smooth deformation of the graphene layer, when the height corrugation, $h$, and the length of the ripple, $l$, are such that $h^2 / (l a) \gtrsim 1$, where $a$ is the lattice constant. The existence of localized levels gives rise to a large compressibility at zero energy, and to the enhancement of instabilities arising from electron-electron interactions including electronic phase separation. The combined effect of the ripples and an external magnetic field breaks the valley symmetry of graphene leading to the possibility of valley selection

Conductivity and Fano factor in disordered graphene

Using the recursive Green's function method, we study the problem of electron transport in a disordered single-layer graphene sheet. The conductivity is of order $e^2/h$ and its dependence on the carrier density has a scaling form that is controlled solely by the disorder strength and the ratio between the sample size and the correlation length of the disorder potential. The shot noise Fano factor is shown to have a narrow dip near the neutrality point for weak disorder and to develop a nearly doping independent behavior at strong disorder. Our results are in good qualitative and quantitative agreement with experiments and provide a way for extracting microscopic information about the magnitude of extrinsic disorder in graphene.Comment: 4 pages, 5 figure

Aligned Molecular Clouds towards SS433 and L=348.5 degrees; Possible Evidence for Galactic "Vapor Trail" Created by Relativistic Jet

We have carried out a detailed analysis of the NANTEN 12CO(J=1-0) dataset in two large areas of ~25 square degrees towards SS433 (l~40 degree) and of ~18 square degrees towards l~348.5 degree, respectively. We have discovered two groups of remarkably aligned molecular clouds at |b|~1--5 degree in the two regions. In SS433, we have detected 10 clouds in total, which are well aligned nearly along the axis of the X-ray jet emanating from SS433. These clouds have similar line-of-sight velocities of 42--56 km s^-1 and the total projected length of the feature is ~300 pc, three times larger than that of the X-ray jet, at a distance of 3 kpc. Towards l~348.5 degree, we have detected four clouds named as MJG348.5 at line-of-sight velocities of -80 -- -95 km s^-1 in V_LSR, which also show alignment nearly perpendicular to the Galactic plane. The total length of the feature is ~400 pc at a kinematic distance of 6 kpc. In the both cases, the CO clouds are distributed at high galactic latitudes where such clouds are very rare. In addition, their alignments and coincidence in velocity should be even rarer, suggesting that they are physically associated. We tested a few possibilities to explain these clouds, including protostellar outflows, supershells, and interactions with energetic jets. Among them, a favorable scenario is that the interaction between relativistic jet and the interstellar medium induced the formation of molecular clouds over the last ~10^5-6 yrs. It is suggested that the timescale of the relativistic jet may be considerably larger, in the order of 10^5-6 yrs, than previously thought in SS433. The driving engine of the jet is obviously SS433 itself in SS433, although the engine is not yet identified in MJG348.5 among possible several candidates detected in the X-rays and TeV gamma rays.Comment: 29 pages, 10 figures, already published in PASJ, 2008,60, 71

Atomic Structure of Graphene on SiO2

We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets.Comment: 13 pages, 4 figure