Tunneling through a narrow-gap semiconductor with different conduction- and valence-band effective masses

We have calculated tunneling conductance in metal–narrow-gap-semiconductor (NGS)–metal tunnel junctions. Flietner's two-band model is used to describe the dispersion relation within the energy gap in an isotropic NGS with different conduction- and valence-band edge effective masses. The results are compared with the tunneling conductance calculated by Kane's two-band model, which has been commonly used to describe the tunneling characteristics through the energy gap in semiconductors. These results propose that the tunneling conductance in the tunnel junctions in which a narrow gap semiconductor of largely different conduction- and valence-band effective masses is used as a tunneling barrier can exhibit quite a different behavior, especially in the region of the midgap, from the tunneling conductance described by Kane's two-band model

Solarenergieforschung am Hahn-Meitner-Institut Beitraege eine Klausurtagung

The report gives a review of the past and present activities in the Hahn-Meitner-Institute in the field of solar energy research. These include a broad spectrum of basic research as well as engagement in selected areas of applied research. The results of microstructural, optical, electrical, and photoelectrical investigations are being related to the preparation conditions and to the pretreatments of materials like silicon, silicides, pyrit, CIS, layered compounds, and highly monodispersed systems. Special attention is paid to the potential application of new materials and heterostructures in photovoltaics which requires further elucidation. (orig.)SIGLEAvailable from TIB Hannover: ZA 4746(529) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman