2,490 research outputs found
Detection of cochlear hearing loss applying wavelet packets and support vector machines
The aim of this paper is to evaluate the application of the wavelet packet transform (WP) and support vector machines (SVM) to transient evoked otoacoustic emissions (TEOAE) in order to achieve a detection of frequency-specific hearing loss. We introduce a system to determine detection rates between groups of persons with normal hearing, high frequency hearing loss, and pantonal hearing loss. The validity and use of our approach is verified on a different patient group
Magnetic domains in III-V magnetic semiconductors
Recent progress in theoretical understanding of magnetic anisotropy and
stiffness in III-V magnetic semiconductors is exploited for predictions of
magnetic domain characteristics and methods of their tuning. We evaluate the
width and the energy of domain walls as well as the period of stripe domains in
perpendicular films. The computed stripe width d = 1.1 um for
Ga_0.957Mn_0.043As/In_0.16Ga_0.84As compares favorably to the experimental
value 1.5 um, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363
(2000)].Comment: 4 RevTex pages, 2 figures spelling of author's names corrected in
abstract pag
Anomalous Hall effect in field-effect structures of (Ga,Mn)As
The anomalous Hall effect in metal-insulator-semiconductor structures having
thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and
hole densities changed by the gate electric field. Strong and unanticipated
temperature dependence, including a change of sign, of the anomalous Hall
conductance has been found in samples with the highest Curie
temperatures. For more disordered channels, the scaling relation between
and , similar to the one observed previously for
thicker samples, is recovered.Comment: 5 pages, 5 figure
Magneto-electric coupling in zigzag graphene nanoribbons
Zigzag graphene nanoribbons can have magnetic ground states with
ferromagnetic, antiferromagnetic, or canted configurations, depending on
carrier density. We show that an electric field directed across the ribbon
alters the magnetic state, favoring antiferromagnetic configurations. This
property can be used to prepare ribbons with a prescribed spin-orientation on a
given edge.Comment: 4 pages, 5 figure
Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films
Effects of spin-orbit coupling and s-d exchange interaction are probed by
magnetoresistance measurements carried out down to 50 mK on ZnO and
Zn_{1-x}Mn_{x}O with x = 3 and 7%. The films were obtained by laser ablation
and doped with Al to electron concentration ~10^{20} cm^{-3}. A quantitative
description of the data for ZnO:Al in terms of weak-localization theory makes
it possible to determine the coupling constant \lambda_{so} = (4.4 +-
0.4)*10^{-11} eVcm of the kp hamiltonian for the wurzite structure, H_{so} =
\lambda_{so}*c(s x k). A complex and large magnetoresistance of
Zn_{1-x}Mn_{x}O:Al is interpreted in terms of the influence of the s-d
spin-splitting and magnetic polaron formation on the disorder-modified
electron-electron interactions. It is suggested that the proposed model
explains the origin of magnetoresistance observed recently in many magnetic
oxide systems.Comment: 4 pages, 4 figure
Noncollinear Ferromagnetism in (III,Mn)V Semiconductors
We investigate the stability of the collinear ferromagnetic state in kinetic
exchange models for (III,Mn)V semiconductors with randomly distributed Mn ions
>. Our results suggest that {\em noncollinear ferromagnetism} is commom to
these semiconductor systems. The instability of the collinear state is due to
long-ranged fluctuations invloving a large fraction of the localized magnetic
moments. We address conditions that favor the occurrence of noncollinear
groundstates and discuss unusual behavior that we predict for the temperature
and field dependence of its saturation magnetization.Comment: 5 pages, one figure included, presentation of technical aspects
simplified, version to appear in Phys. Rev. Let
The enhancement of ferromagnetism in uniaxially stressed diluted magnetic semiconductors
We predict a new mechanism of enhancement of ferromagnetic phase transition
temperature in uniaxially stressed diluted magnetic semiconductors (DMS)
of p-type. Our prediction is based on comparative studies of both Heisenberg
(inherent to undistorted DMS with cubic lattice) and Ising (which can be
applied to strongly enough stressed DMS) models in a random field approximation
permitting to take into account the spatial inhomogeneity of spin-spin
interaction. Our calculations of phase diagrams show that area of parameters
for existence of DMS-ferromagnetism in Ising model is much larger than that in
Heisenberg model.Comment: Accepted for publication in Phys. Rev.
Magnetic interactions of substitutional Mn pairs in GaAs
We employ a kinetic-exchange tight-binding model to calculate the magnetic
interaction and anisotropy energies of a pair of substitutional Mn atoms in
GaAs as a function of their separation distance and direction. We find that the
most energetically stable configuration is usually one in which the spins are
ferromagnetically aligned along the vector connecting the Mn atoms. The
ferromagnetic configuration is characterized by a splitting of the topmost
unoccupied acceptor levels, which is visible in scanning tunneling microscope
studies when the pair is close to the surface and is strongly dependent on pair
orientation. The largest acceptor splittings occur when the Mn pair is oriented
along the symmetry direction, and the smallest when they are oriented
along . We show explicitly that the acceptor splitting is not simply
related to the effective exchange interaction between the Mn local moments. The
exchange interaction constant is instead more directly related to the width of
the distribution of all impurity levels -- occupied and unoccupied. When the Mn
pair is at the (110) GaAs surface, both acceptor splitting and effective
exchange interaction are very small except for the smallest possible Mn
separation.Comment: 25 figure
Domain-wall resistance in ferromagnetic (Ga,Mn)As
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As
with perpendicular magnetic anisotropy has been employed to determine extrinsic
and intrinsic contributions to DW resistance. The former is explained
quantitatively as resulting from a polarity change in the Hall electric field
at DW. The latter is one order of magnitude greater than a term brought about
by anisotropic magnetoresistance and is shown to be consistent with
disorder-induced misstracing of the carrier spins subject to spatially varying
magnetization
Hole concentration in a diluted ferromagnetic semiconductor
We consider a mean-field approach to the hole-mediated ferromagnetism in
III-V Mn-based semiconductor compounds to discuss the dependence of the hole
density on that of Mn sites in Ga_{1-x}Mn_xAs. The hole concentration, p, as a
function of the fraction of Mn sites, x, is parametrized in terms of the
product m*J_{pd}^2 (where m* is the hole effective mass and J_{pd} is the
Kondo-like hole/local-moment coupling), and the critical temperature Tc. By
using experimental data for these quantities, we have established the
dependence of the hole concentration with x, which can be associated with the
occurrence of a reentrant metal-insulator transition taking place in the hole
gas. We also calculate the dependence of the Mn magnetization with x, for
different temperatures (T), and found that as T increases, the width of the
composition-dependent magnetization decreases drammatically, and that the
magnetization maxima also decreases, indicating the need for quality-control of
Mn-doping composition in diluted magnetic semiconductor devices.Comment: 4 pages, 3 figures, RevTeX 3; Fig. 1 changed, new references adde
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