2,564 research outputs found

    A Comparison of Blocking Methods for Record Linkage

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    Record linkage seeks to merge databases and to remove duplicates when unique identifiers are not available. Most approaches use blocking techniques to reduce the computational complexity associated with record linkage. We review traditional blocking techniques, which typically partition the records according to a set of field attributes, and consider two variants of a method known as locality sensitive hashing, sometimes referred to as "private blocking." We compare these approaches in terms of their recall, reduction ratio, and computational complexity. We evaluate these methods using different synthetic datafiles and conclude with a discussion of privacy-related issues.Comment: 22 pages, 2 tables, 7 figure

    Superconducting magnesium diboride films on Silicon with Tc0 about 24K grown via vacuum annealing from stoichiometric precursors

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    Superconducting magnesium diboride films with Tc0 ~ 24 K and sharp transition \~ 1 K were successfully prepared on silicon substrates by pulsed laser deposition from a stoichiometric MgB2 target. Contrary to previous reports, anneals at 630 degree and a background of 2x10^(-4) torr Ar/4%H2 were performed without the requirement of Mg vapor or an Mg cap layer. This integration of superconducting MgB2 films on silicon may thus prove enabling in superconductor-semiconductor device applications. Images of surface morphology and cross-section profiles by scanning electron microscopy (SEM) show that the films have a uniform surface morphology and thickness. Energy dispersive spectroscopy (EDS) reveals these films were contaminated with oxygen, originating either from the growth environment or from sample exposure to air. The oxygen contamination may account for the low Tc for those in-situ annealed films, while the use of Si as the substrate does not result in a decrease in Tc as compared to other substrates.Comment: 5 pages, 4 figures, 15 references; due to file size limit, images were blure

    Charge injection instability in perfect insulators

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    We show that in a macroscopic perfect insulator, charge injection at a field-enhancing defect is associated with an instability of the insulating state or with bistability of the insulating and the charged state. The effect of a nonlinear carrier mobility is emphasized. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect (or contact). Charge injection stops when the field enhancement is screened below criticality. Secondly, the charge slowly redistributes in the bulk. The linear instability mechanism and the final charged steady state are discussed for a simple model and for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.Comment: Revtex, 7pages, 4 ps figure

    Infrared anomalous Hall effect in SrRuO3_3: Evidence for crossover to intrinsic behavior

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    The origin of the Hall effect in many itinerant ferromagnets is still not resolved, with an anomalous contribution from the sample magnetization that can exhibit extrinsic or intrinsic behavior. We report the first mid-infared (MIR) measurements of the complex Hall (θH\theta_H), Faraday (θF\theta_F), and Kerr (θK\theta_K) angles, as well as the Hall conductivity (σxy\sigma_{xy}) in a SrRuO3_3 film in the 115-1400 meV energy range. The magnetic field, temperature, and frequency dependence of the Hall effect is explored. The MIR magneto-optical response shows very strong frequency dependence, including sign changes. Below 200 meV, the MIR θH(T)\theta_H (T) changes sign between 120 and 150 K, as is observed in dc Hall measurements. Above 200 meV, the temperature dependence of θH\theta_H is similar to that of the dc magnetization and the measurements are in good agreement with predictions from a band calculation for the intrinsic anomalous Hall effect (AHE). The temperature and frequency dependence of the measured Hall effect suggests that whereas the behavior above 200 meV is consistent with an intrinsic AHE, the extrinsic AHE plays an important role in the lower energy response.Comment: The resolution of figures is improve
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