sj-tif-1-ear-10.1177_01455613231214705 – Supplemental material for Sudden Unilateral Visual Loss Due to an Onodi Cell Mucocele

Supplemental material, sj-tif-1-ear-10.1177_01455613231214705 for Sudden Unilateral Visual Loss Due to an Onodi Cell Mucocele by Yong Jun Yoo, Gyu Tae Kim and Marn Joon Park in Ear, Nose & Throat Journal</p

Structural Origin of the Band Gap Anomaly of Quaternary Alloy Cd_<i>x</i>Zn_1–<i>x</i>S_<i>y</i>Se_1–<i>y</i> Nanowires, Nanobelts, and Nanosheets in the Visible Spectrum

Single-crystalline alloy II–VI semiconductor nanostructures have been used as functional materials to propel photonic and optoelectronic device performance in a broad range of the visible spectrum. Their functionality depends on the stable modulation of the direct band gap (<i>E</i>_g), which can be finely tuned by controlling the properties of alloy composition, crystallinity, and morphology. We report on the structural correlation of the optical band gap anomaly of quaternary alloy Cd_<i>x</i>Zn_1–<i>x</i>S_<i>y</i>Se_1–<i>y</i> single-crystalline nanostructures that exhibit different morphologies, such as nanowires (NWs), nanobelts (NBs), and nanosheets (NSs), and cover a wide range of the visible spectrum (<i>E</i>_g = 1.96–2.88 eV). Using pulsed laser deposition, the nanostructures evolve from NWs <i>via</i> NBs to NSs with decreasing growth temperature. The effects of the growth temperature are also reflected in the systematic variation of the composition. The alloy nanostructures firmly maintain single crystallinity of the hexagonal wurtzite and the nanoscale morphology, with no distortion of lattice parameters, satisfying the virtual crystal model. For the optical properties, however, we observed distinct structure-dependent band gap anomalies: the disappearance of bowing for NWs and maximum and slightly reduced bowing for NBs and NSs, respectively. We tried to uncover the underlying mechanism that bridges the structural properties and the optical anomaly using an empirical pseudopotential model calculation of electronic band structures. From the calculations, we found that the optical bowings in NBs and NSs were due to residual strain, by which they are also distinguishable from each other: large for NBs and small for NSs. To explain the origin of the residual strain, we suggest a semiempirical model that considers intrinsic atomic disorder, resulting from the bond length mismatch, combined with the strain relaxation factor as a function of the width-to-thickness ratio of the NBs or NSs. The model agreed well with the observed optical bowing of the alloy nanostructures in which a mechanism for the maximum bowing for NBs is explained. The present systematic study on the structural–optical properties correlation opens a new perspective to understand the morphology- and composition-dependent unique optical properties of II–VI alloy nanostructures as well as a comprehensive strategy to design a facile band gap modulation method of preparing photoconverting and photodetecting materials

Surface Modulation of Graphene Field Effect Transistors on Periodic Trench Structure

In this work, graphene field effect transistors (FETs) were fabricated on a trench structure made by carbonized poly­(methylmethacrylate) to modify the graphene surface. The trench-structured devices showed different characteristics depending on the channel orientation and the pitch size of the trenches as well as channel area in the FETs. Periodic corrugations and barriers of suspended graphene on the trench structure were measured by atomic force microscopy and electrostatic force microscopy. Regular barriers of 160 mV were observed for the trench structure with graphene. To confirm the transfer mechanism in the FETs depending on the channel orientation, the ratio of experimental mobility (3.6–3.74) was extracted from the current–voltage characteristics using equivalent circuit simulation. It is shown that the number of barriers increases as the pitch size decreases because the number of corrugations increases from different trench pitches. The noise for the 140 nm pitch trench is 1 order of magnitude higher than that for the 200 nm pitch trench