Kelvin probe force microscopy for material characterization

Kelvin probe force microscopy is a scanning probe method for imaging the surface potential by atomic force microscopy. The surface potential is one of the most important surface properties and is correlated to e.g. the work function, surface dipoles, localized surface charges and structural properties. It gives detailed information on the electrical properties and can be combined with optical and electrical excitation mechanisms providing additional properties like surface band bending and charge carrier mobilities. We will introduce the main concept and will briefly describe the major methods of operation. Based on the analysis of a Si superjunction device, structures dopant profiling and the concept of surface photovoltage measurements will be introduced. The influence of local charge accumulation on these devices will be presented and the effect on the measured contact potential values will be discussed

Two case reports of unexpected tracheal agenesis in the neonate: 3 C's beyond algorithms for difficult airway management

Background: Handling neonates with postnatal respiratory failure due to congenital airway malformations implies knowledge about emergency management of unexpected difficult airway. In these stressful situations both technical and communication skills of the caretakers are essential. Case presentation: Two cases with prenatally unknown tracheal agenesis are reported. Conclusion: In the presented cases, airway malformation and subsequent difficulties upon endotracheal intubation were not adequately communicated between caretakers. We discuss the aspects of culture, communication, and capnography

Mechanical dissipation via image potential states on a topological insulator surface

Joule energy loss due to resistive heating is omnipresent in today's electronic devices whereas quantum-mechanical dissipation is largely unexplored. Here, we experimentally observe a suppression of the Joule dissipation in Bi2Te3 due to topologically protected surface states. Instead, a different type of dissipation mechanism is observed by pendulum atomic force microscopy, which is related to single-electron tunnelling resonances into image potential states that are slightly above the Bi2Te3 surface. The application of a magnetic field leads to the breakdown of the topological protection of the surface states and restores the expected Joule dissipation process. Nanomechanical energy dissipation experienced by the cantilever of the pendulum atomic force microscope provides a rich source of information on the dissipative nature of the quantum-tunnelling phenomena on the topological insulator surface, with implications for coupling a mechanical oscillator to the generic quantum material

Magnetic properties of nanomagnetic and biomagnetic systems analyzed using cantilever magnetometry

Magnetic properties of nanomagnetic and biomagnetic systems are investigated using cantilever magnetometry. In the presence of a magnetic field, magnetic films or particles deposited at the free end of a cantilever give rise to a torque on the mechanical sensor, which leads to frequency shifts depending on the applied magnetic field. From the frequency response, the magnetic properties of a magnetic sample are obtained. The magnetic field dependences of paramagnetic and ferromagnetic thin films and particles are measured in a temperature range of 5-320 K at a pressure below 10(-6) mbar. We present magnetic properties of the ferromagnetic materials Fe, Co and Ni at room temperature and also for the rare earth elements Gd, Dy and Tb at various temperatures. In addition, the magnetic moments of magnetotactic bacteria are measured under vacuum conditions at room temperature. Cantilever magnetometry is a highly sensitive tool for characterizing systems with small magnetic moments. By reducing the cantilever dimensions the sensitivity can be increased by an order of magnitude

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterization of conducting or semiconducting power devices with EFM methods requires an accurate and reliable technique from the nanometre up to the micrometre scale. For high force sensitivity it is indispensable to operate the microscope under high to ultra-high vacuum (UHV) conditions to suppress viscous damping of the sensor. Furthermore, UHV environment allows for the analysis of clean surfaces under controlled environmental conditions. Because of these requirements we built a large area scanning probe microscope operating under UHV conditions at room temperature allowing to perform various electrical measurements, such as Kelvin probe force microscopy, scanning capacitance force microscopy, scanning spreading resistance microscopy, and also electrostatic force microscopy at higher harmonics. The instrument incorporates beside a standard beam deflection detection system a closed loop scanner with a scan range of 100 μm in lateral and 25 μm in vertical direction as well as an additional fibre optics. This enables the illumination of the tip–sample interface for optically excited measurements such as local surface photo voltage detection. Results: We present Kelvin probe force microscopy (KPFM) measurements before and after sputtering of a copper alloy with chromium grains used as electrical contact surface in ultra-high power switches. In addition, we discuss KPFM measurements on cross sections of cleaved silicon carbide structures: a calibration layer sample and a power rectifier. To demonstrate the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination

Mechanical dissipation from charge and spin transitions in oxygen-deficient SrTiO3 surfaces

Bodies in relative motion separated by a gap of a few nanometers can experience a tiny friction force. This non-contact dissipation can have various origins and can be successfully measured by a sensitive pendulum atomic force microscope tip oscillating laterally above the surface. Here, we report on the observation of dissipation peaks at selected voltage-dependent tip-surface distances for oxygen-deficient strontium titanate (SrTiO_3) surface at low temperatures (T = 5K). The observed dissipation peaks are attributed to tip-induced charge and spin state transitions in quantum-dot-like entities formed by single oxygen vacancies (and clusters thereof, possibly through a collective mechanism) at the SrTiO_3 surface, which in view of technological and fundamental research relevance of the material opens important avenues for further studies and applications

Two-Dimensional Carrier Profiling on Lightly Doped n-Type 4H-SiC Epitaxially Grown Layers

Electronically active dopant profiles of epitaxially grown n-type 4H-SiC calibration layer structures with concentrations ranging from 3.1015 cm-3 to 1·1019 cm-3 have been investigated by non-contact Scanning Probe Microscopy (SPM) methods. We have shown that Kelvin Probe Force Microscopy (KPFM) and Electrostatic Force Microscopy (EFM) are capable of resolving two-dimensional carrier maps in the low doping concentration regime with nanoscale spatial resolution. Furthermore, different information depths of this wide band gap semiconductor material could be assessed due to the inherent properties of each profiling method. We additionally observed a resolution enhancement under laser illumination which we explain by reduced band-bending conditions. To gauge our SPM signals, we utilized epitaxially grown layers which were calibrated, in terms of dopant concentration, by C-V measurements