1 research outputs found
Low-Temperature Molecular Vapor Deposition of Ultrathin Metal Oxide Dielectric for Low-Voltage Vertical Organic Field Effect Transistors
We demonstrate a low-temperature
layer-by-layer formation of a metal-oxide-only (AlO<sub><i>x</i></sub>) gate dielectric to attain low-voltage operation of a self-assembly
based vertical organic field effect transistor (VOFET). The AlO<sub><i>x</i></sub> deposition method results in uniform films
characterized by high quality dielectric properties. Pin-hole free
ultrathin layers with thicknesses ranging between 1.2 and 24 nm feature
bulk dielectric permittivity, ε<sub>AlO<i>x</i></sub>, of 8.2, high breakdownfield (>8 MV cm<sup>–1</sup>),
low leakage currents (<10<sup>–7</sup>A cm<sup>–2</sup> at 3MV cm<sup>–1</sup>), and high capacitance (up to 1 μF
cm<sup>–2</sup>). We show the benefits of the tunable surface
properties of the oxide-only dielectric utilized here, in facilitating
the subsequent nanostructuring steps required to realize the VOFET
patterned source electrode. Optimal wetting properties enable the
directional block-copolymer based self-assembly patterning, as well
as the formation of robust and continuous ultrathin metallic films.
Supported by computer modeling, the vertical architecture and the
methods demonstrated here offer a simple, low-cost, and free of expensive
lithography route for the realization of low-voltage (<i>V</i><sub>GS/DS</sub> ≤ 3 V), low-power, and potentially high-frequency
large-area electronics