Entwicklung bleifreier Lote fuer die Elektronik am Beispiel der Flipchip-Technologie. Teilvorhaben: Bleifreie Legierungen fuer die Mikrokontaktierung Abschlussbericht

Objective of the project was the development of preparation and assembling techniques for a lead free solder alloy exemplary for flip chip technology. The requirements of electronic applications has been transferred to material requirements, which have been input parameters for a literature survey. A number of about 20 tin based alloys hit coarsely. In a screen process the selected candidates were tested for there interactions with electronic conductor materials as copper and aluminum. Main test criterias have been wetting behavior, dissolving and corrosion. An eutectic silver tin alloy showed the best results with respect to the test criterias. The development of direct galvanic deposition of this alloy was a big challenge because of the big difference in redox potential. A technology demonstrator has been successful realized which demonstrates all the developed processes. After temperature cycles and environment tests the reliability of the developed lead free flip chip process has been demonstrated. (orig.)SIGLEAvailable from TIB Hannover: F00B561+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman

Mobile Kommunikation. Teilvorhaben: Halbleitersendemodule fuer Kommunikationssysteme im 30-50 GHz-Bereich Abschlussbericht

The project 'GaAs Power Modules for Communication Systems in the Frequency Range 30-50 GHz' is embedded in the research program 'Mobile Communication' founded by the german Ministry of Education and Research (BMBF). In this work theoretical studies and basic technologies for the integration of 1 Watt power modules with cascaded power cells in flip chip technology were realized. In order to remove the power losses of the unthinned coplanar power cells, additionally to the electrical bump interconnects thermal bumps near the gate fingers on the source pads and high thermal conductive aluminum nitride substrates have been used. The influence of the thermal bump interconnects to the electrical characteristics of the power cells at high frequencies was determined by on wafer measurements. In order to establish a substrate integrated housing technology for frequencies up to 70 GHz coplanar feed through transmission lines have been realized by use of thin film multilayer technology with 25 #mu#m thick polyimide dielectrics. Manufacturing of the GaAs power cells was done in cooperation with Fraunhofer Institute IAF, Freiburg, and electromagnetic simulation of feed throughs, bump connections and parasitic modes in cooperation with Ferdinand braun Institute, Berlin. (orig.)Available from TIB Hannover: F99B1319+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEBundesministerium fuer Bildung und Forschung (BMBF), Bonn (Germany)DEGerman

Ferroelektrische duenne Schichten fuer die Bild- und Signaltechnik Schlussbericht

With 13 refs., 20 tabs., 47 figs.SIGLEDEGerman

Ferroelektrische duenne Schichten fuer die Bild- und Signaltechnik Schlussbericht

With 13 refs., 20 tabs., 47 figs.SIGLEDEGerman