26 research outputs found
Side extraction duoPIGatron-type ion source.
We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in such the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1x40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using Argon, BF3. The total unanalyzed beam currents are 23 mA using Ar at an arc current 5 A and 13 mA using BF3 gas at an arc current 6 A
Computer modelling new generation plasma optical devices (new results)
We present new results of computer modeling two new generation plasma optical devices based on the electrostatic plasma lens configuration that open up perspective possibility for high-tech effective applications. There describe development numerical model computer simulation results of a wide-aperture non-relativistic intense electron beam propagating through an axially symmetric plasma optical lens with a non -compensated positive space charge and the results of some theoretical calculations. The described also the original approach to use plasma accelerators with closed electron drift and open walls for generating effective lens with positive space charge.ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ ΡΠΈΡΠ»Π΅Π½Π½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΠΈΡΠΎΠ²Π°Π½ΠΈΡ Π΄Π²ΡΡ
ΠΏΠ»Π°Π·ΠΌΠΎΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΡΡΡΠΎΠΉΡΡΠ² Π½ΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠΎΠΊΠΎΠ»Π΅Π½ΠΈΡ, ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΡΡΠΈΡ
ΠΈΠ½ΡΠ΅ΡΠ΅Ρ Π΄Π»Ρ ΡΠΎΠ²ΡΠ΅ΠΌΠ΅Π½Π½ΡΡ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠΉ. ΠΠΏΠΈΡΠ°Π½Ρ Π°ΠΊΡΠΈΠ°Π»ΡΠ½ΠΎ-ΡΠΈΠΌΠΌΠ΅ΡΡΠΈΡΠ΅ΡΠΊΠΈΠ΅, ΡΠΈΠ»ΠΈΠ½Π΄ΡΠΈΡΠ΅ΡΠΊΠΈΠ΅, ΠΏΠ»Π°Π·ΠΌΠΎΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΠ΅ ΡΡΡΡΠΎΠΉΡΡΠ²Π°, Π² ΡΠΈΠ·ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΈ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΠΎΠΉ ΠΎΡΠ½ΠΎΠ²Π΅ ΠΊΠΎΡΠΎΡΡΡ
Π»Π΅ΠΆΠΈΡ ΡΠ»Π΅ΠΊΡΡΠΎΡΡΠ°ΡΠΈΡΠ΅ΡΠΊΠ°Ρ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½Π°Ρ Π»ΠΈΠ½Π·Π°. ΠΡΠΈΠ²Π΅Π΄Π΅Π½Ρ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΡ Π΄Π°Π»ΡΠ½Π΅ΠΉΡΠ΅Π³ΠΎ ΡΠ°Π·Π²ΠΈΡΠΈΡ ΡΠΈΡΠ»Π΅Π½Π½ΠΎΠΉ ΠΌΠΎΠ΄Π΅Π»ΠΈ Π΄ΠΈΠ½Π°ΠΌΠΈΠΊΠΈ Π½Π΅ΡΠ΅Π»ΡΡΠΈΠ²ΠΈΡΡΡΠΊΠΎΠ³ΠΎ ΡΠΈΡΠΎΠΊΠΎΠ°ΠΏΠ΅ΡΡΡΡΠ½ΠΎΠ³ΠΎ ΠΈΠ½ΡΠ΅Π½ΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΠΏΡΡΠΊΠ° ΡΠ»Π΅ΠΊΡΡΠΎΠ½ΠΎΠ² Π² ΠΎΠ±Π»Π°ΠΊΠ΅ ΠΏΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΡΠΎΡΡΡΠ°Π½ΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Π°. ΠΠΏΠ΅ΡΠ²ΡΠ΅ ΠΎΠΏΠΈΡΠ°Π½Π° ΠΎΠ΄Π½ΠΎΠΌΠ΅ΡΠ½Π°Ρ ΠΌΠΎΠ΄Π΅Π»Ρ ΠΎΡΠΈΠ³ΠΈΠ½Π°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠ»Π°Π·ΠΌΠ΅Π½Π½ΠΎΠ³ΠΎ ΡΡΠΊΠΎΡΠΈΡΠ΅Π»Ρ Ρ ΠΎΡΠΊΡΡΡΡΠΌΠΈ ΡΡΠ΅Π½ΠΊΠ°ΠΌΠΈ Π΄Π»Ρ ΠΈΡΠΏΠΎΠ»ΡΠ·ΠΎΠ²Π°Π½ΠΈΡ Π²ΠΊΠ°ΡΠ΅ΡΡΠ²Π΅ ΡΡΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΠΉ ΠΏΠ»Π°Π·ΠΌΠ΅Π½ΠΎΠΉ Π»ΠΈΠ½Π·Ρ ΡΠΏΠΎΠ·ΠΈΡΠΈΠ²Π½ΡΠΌ ΠΏΡΠΎΡΡΡΠ°Π½ΡΡΠ²Π΅Π½Π½ΡΠΌ Π·Π°ΡΡΠ΄ΠΎΠΌ.ΠΡΠ΅Π΄ΡΡΠ°Π²Π»Π΅Π½ΠΎ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΈ ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΠΌΠΎΠ΄Π΅Π»ΡΠ²Π°Π½Π½Ρ Π΄Π²ΠΎΡ
ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎ-ΠΎΠΏΡΠΈΡΠ½ΠΈΡ
ΠΏΡΠΈΠ»Π°Π΄ΡΠ² Π½ΠΎΠ²ΠΎΠ³ΠΎ ΠΏΠΎΠΊΠΎΠ»ΡΠ½Π½Ρ, ΡΠΊΡ ΠΏΡΠ΅Π΄ΡΡΠ°Π²Π»ΡΡΡΡ ΡΠ½ΡΠ΅ΡΠ΅Ρ Π΄Π»Ρ ΡΡΡΠ°ΡΠ½ΠΈΡ
ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΡΠΉ. ΠΠΏΠΈΡΠ°Π½ΠΎ Π°ΠΊΡΡΠ°Π»ΡΠ½ΠΎ-ΡΠΈΠΌΠ΅ΡΡΠΈΡΠ½Ρ, ΡΠΈΠ»ΡΠ½Π΄ΡΠΈΡΠ½Ρ, ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎΠΎΠΏΡΠΈΡΠ½Ρ ΠΏΡΠΈΡΡΡΠΎΡ, Π² ΡΡΠ·ΠΈΡΠ½ΠΎΡ Ρ ΠΊΠΎΠ½ΡΡΡΡΠΊΡΠΈΠ²Π½ΠΎΡ ΠΎΡΠ½ΠΎΠ²Ρ ΡΠΊΠΈΡ
Π»Π΅ΠΆΠΈΡΡ Π΅Π»Π΅ΠΊΡΡΠΎΡΡΠ°ΡΠΈΡΠ½Π° ΠΏΠ»Π°Π·ΠΌΠΎΠ²Π° Π»ΡΠ½Π·Π°. ΠΠ°Π²Π΅Π΄Π΅Π½ΠΎ ΡΠ΅Π·ΡΠ»ΡΡΠ°ΡΠΈ ΠΏΠΎΠ΄Π°Π»ΡΡΠΎΠ³ΠΎ ΡΠΎΠ·Π²ΠΈΡΠΊΡ ΡΠΈΡΠ΅Π»ΡΠ½ΠΎΡ ΠΌΠΎΠ΄Π΅Π»Ρ Π΄ΠΈΠ½Π°ΠΌΡΠΊΠΈ ΠΏΡΡΠΊΠ° Π΅Π»Π΅ΠΊΡΡΠΎΠ½ΡΠ² Ρ Ρ
ΠΌΠ°ΡΡ ΠΏΠΎΠ·ΠΈΡΠΈΠ²Π½ΠΎΠ³ΠΎ ΠΏΡΠΎΡΡΠΎΡΠΎΠ²ΠΎΠ³ΠΎ Π·Π°ΡΡΠ΄Ρ, ΡΡΠ²ΠΎΡΠ΅Π½ΠΎΠ³ΠΎ ΡΠΈΠ»ΡΠ½Π΄ΡΠΈΡΠ½ΠΈΠΌ ΠΏΡΠΈΡΠΊΠΎΡΡΠ²Π°ΡΠ΅ΠΌ Π· Π°Π½ΠΎΠ΄Π½ΠΈΠΌ ΡΠ°ΡΠΎΠΌ ΡΠ° ΠΌΠ°Π³Π½ΡΡΠ½ΠΎΡ ΡΠ·ΠΎΠ»ΡΡΡΡΡ Π΅Π»Π΅ΠΊΡΡΠΎΠ½ΡΠ². ΠΠΏΠ΅ΡΡΠ΅ ΠΎΠΏΠΈΡΠ°Π½Π° ΠΎΠ΄Π½ΠΎΠ²ΠΈΠΌΡΡΠ½Π° ΠΌΠΎΠ΄Π΅Π»Ρ ΠΎΡΠΈΠ³ΡΠ½Π°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎΠ³ΠΎ ΠΏΡΠΈΡΠΊΠΎΡΡΠ²Π°ΡΠ° Π· Π²ΡΠ΄ΠΊΡΠΈΡΠΈΠΌΠΈ ΡΡΡΠ½ΠΊΠ°ΠΌΠΈ Π΄Π»Ρ Π²ΠΈΠΊΠΎΡΠΈΡΡΠ°Π½Π½Ρ Π² ΡΠΊΠΎΡΡΡ Π΅ΡΠ΅ΠΊΡΠΈΠ²Π½ΠΎΡ ΠΏΠ»Π°Π·ΠΌΠΎΠ²ΠΎΡ Π»ΡΠ½Π·ΠΈ Π· ΠΏΠΎΠ·ΠΈΡΠΈΠ²Π½ΠΈΠΌ ΠΏΡΠΎΡΡΠΎΡΠΎΠ²ΠΈΠΌ Π·Π°ΡΡΠ΄ΠΎΠΌ
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BERNAS ION SOURCE DISCHARGE SIMULATION
The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Bemas ion source is the wide used ion source for ion implantation industry. The new simulation code was developed for the Bemas ion source discharge simulation. We present first results of the simulation for several materials interested in semiconductors. As well the comparison of results obtained with experimental data obtained at the ITEP ion source test-bench is presented
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STATUS OF ITEP DECABORANE ION SOURCE PROGRAM.
The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bemas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented
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Ion Sources for Energy Extremes of Ion Implantation.
For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources
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Underline Physics of E - MEVVA Operation.
Recently substantial enhancement of high ion charge states was clearly observed in both the HCEI and ITEP E-MEVVA ion sources. These experimental set-ups have two different methods of measuring the ion charge state distributions. The results can be considered as a proof of the E-MEVVA principle. These results sparked discussions regarding, which physics effects are dominant. Basic physics seems straightforward, an ion charge state in E-MEVVA is determined by the number of collisions with fast electrons versus the number of encounters with neutrals and lower charge state ions during an ion dwell time in the drift channel. However, the fluxes of fast electrons, lower charge state ions, and neutrals encountered by an ion may be a consequence of numerous effects. Factors determining neutral fluxes might be poor vacuum conditions, desorption of adsorbed gas by the electron beam directly or indirectly due to stacking (E-beam reflection) and/or instabilities that cause heating and desorption. Flux and energy of the fast electrons is primarily determined by the electron gun output. But significant contributions from electron beam stacking, instabilities, as well as plasma electron heating, are possible