Side extraction duoPIGatron-type ion source.

We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in such the ion can be extracted from side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1x40 mm. The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has stable arc, uniformly bright illumination, and dense plasma. The present work describes some of preliminary operating parameters of the ion source using Argon, BF3. The total unanalyzed beam currents are 23 mA using Ar at an arc current 5 A and 13 mA using BF3 gas at an arc current 6 A

Computer modelling new generation plasma optical devices (new results)

We present new results of computer modeling two new generation plasma optical devices based on the electrostatic plasma lens configuration that open up perspective possibility for high-tech effective applications. There describe development numerical model computer simulation results of a wide-aperture non-relativistic intense electron beam propagating through an axially symmetric plasma optical lens with a non -compensated positive space charge and the results of some theoretical calculations. The described also the original approach to use plasma accelerators with closed electron drift and open walls for generating effective lens with positive space charge.Представлены результаты численного моделирования двух плазмооптических устройств нового поколения, представляющих интерес для современных технологий. Описаны аксиально-симметрические, цилиндрические, плазмооптические устройства, в физической и конструктивной основе которых лежит электростатическая плазменная линза. Приведены результаты дальнейшего развития численной модели динамики нерелятивистского широкоапертурного интенсивного пучка электронов в облаке положительного пространственного заряда. Впервые описана одномерная модель оригинального плазменного ускорителя с открытыми стенками для использования вкачестве эффективной плазменой линзы спозитивным пространственным зарядом.Представлено результати чисельного моделювання двох плазмово-оптичних приладів нового покоління, які представляють інтерес для сучасних технологій. Описано аксіально-симетричні, циліндричні, плазмовооптичні пристрої, в фізичної і конструктивної основі яких лежить електростатична плазмова лінза. Наведено результати подальшого розвитку чисельної моделі динаміки пучка електронів у хмарі позитивного просторового заряду, створеного циліндричним прискорювачем з анодним шаром та магнітною ізоляцією електронів. Вперше описана одновимірна модель оригінального плазмового прискорювача з відкритими стінками для використання в якості ефективної плазмової лінзи з позитивним просторовим зарядом

BERNAS ION SOURCE DISCHARGE SIMULATION

The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Bemas ion source is the wide used ion source for ion implantation industry. The new simulation code was developed for the Bemas ion source discharge simulation. We present first results of the simulation for several materials interested in semiconductors. As well the comparison of results obtained with experimental data obtained at the ITEP ion source test-bench is presented

STATUS OF ITEP DECABORANE ION SOURCE PROGRAM.

The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bemas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented

Ion Sources for Energy Extremes of Ion Implantation.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques, which meet the two energy extreme range needs of mega-electron-volt and 100's of electron-volt ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of Antimony and Phosphorous ions: P{sup 2+} (8.6 pmA), P{sup 3+} (1.9 pmA), and P{sup 4+} (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb{sup 3+} Sb{sup 4+}, Sb{sup 5+}, and Sb{sup 6+} respectively. For low energy ion implantation our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA of positive Decaborane ions were extracted at 10 keV and smaller currents of negative Decaborane ions were also extracted. Additionally, Boron current fraction of over 70% was extracted from a Bemas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources

Underline Physics of E - MEVVA Operation.

Recently substantial enhancement of high ion charge states was clearly observed in both the HCEI and ITEP E-MEVVA ion sources. These experimental set-ups have two different methods of measuring the ion charge state distributions. The results can be considered as a proof of the E-MEVVA principle. These results sparked discussions regarding, which physics effects are dominant. Basic physics seems straightforward, an ion charge state in E-MEVVA is determined by the number of collisions with fast electrons versus the number of encounters with neutrals and lower charge state ions during an ion dwell time in the drift channel. However, the fluxes of fast electrons, lower charge state ions, and neutrals encountered by an ion may be a consequence of numerous effects. Factors determining neutral fluxes might be poor vacuum conditions, desorption of adsorbed gas by the electron beam directly or indirectly due to stacking (E-beam reflection) and/or instabilities that cause heating and desorption. Flux and energy of the fast electrons is primarily determined by the electron gun output. But significant contributions from electron beam stacking, instabilities, as well as plasma electron heating, are possible