Advantages of the multinucleon transfer reactions based on 238U target for producing neutron-rich isotopes around N = 126

The mechanism of multinucleon transfer (MNT) reactions for producing neutron-rich heavy nuclei around N = 126 is investigated within two different theoretical frameworks: dinuclear system (DNS) model and isospin-dependent quantum molecular dynamics (IQMD) model. The effects of mass asymmetry relaxation, N=Z equilibration, and shell closures on production cross sections of neutron-rich heavy nuclei are investigated. For the first time, the advantages for producing neutron-rich heavy nuclei around N = 126 is found in MNT reactions based on 238U target. We propose the reactions with 238U target for producing unknown neutron-rich heavy nuclei around N = 126 in the future.Comment: 6 pages, 6 figure

Annihilation Rates of Heavy 1−−1^{--} S-wave Quarkonia in Salpeter Method

The annihilation rates of vector $1^{--}$ charmonium and bottomonium $^3S_1$ states $V \rightarrow e^+e^-$ and $V\rightarrow 3\gamma$, $V \rightarrow \gamma gg$ and $V \rightarrow 3g$ are estimated in the relativistic Salpeter method. We obtained $\Gamma(J/\psi\rightarrow 3\gamma)=6.8\times 10^{-4}$ keV, $\Gamma(\psi(2S)\rightarrow 3\gamma)=2.5\times 10^{-4}$ keV, $\Gamma(\psi(3S)\rightarrow 3\gamma)=1.7\times 10^{-4}$ keV, $\Gamma(\Upsilon(1S)\rightarrow 3\gamma)=1.5\times 10^{-5}$ keV, $\Gamma(\Upsilon(2S)\rightarrow 3\gamma)=5.7\times 10^{-6}$ keV, $\Gamma(\Upsilon(3S)\rightarrow 3\gamma)=3.5\times 10^{-6}$ keV and $\Gamma(\Upsilon(4S)\rightarrow 3\gamma)=2.6\times 10^{-6}$ keV. In our calculations, special attention is paid to the relativistic correction, which is important and can not be ignored for excited $2S$, $3S$ and higher excited states.Comment: 10 pages,2 figures, 5 table

Enhanced Gas-Flow-Induced Voltage in Graphene

We show by systemically experimental investigation that gas-flow-induced voltage in monolayer graphene is more than twenty times of that in bulk graphite. Examination over samples with sheet resistances ranging from 307 to 1600 {\Omega}/sq shows that the induced voltage increase with the resistance and can be further improved by controlling the quality and doping level of graphene. The induced voltage is nearly independent of the substrate materials and can be well explained by the interplay of Bernoulli's principle and the carrier density dependent Seebeck coefficient. The results demonstrate that graphene has great potential for flow sensors and energy conversion devices