1 research outputs found
Growth of the Bi<sub>2</sub>Se<sub>3</sub> Surface Oxide for Metal–Semiconductor–Metal Device Applications
The effect of the surface structure
of Bi<sub>2</sub>Se<sub>3</sub> on its interior properties has been
well studied recently, but the
interfacial structure and electrical properties of the oxidized Bi<sub>2</sub>Se<sub>3</sub> surface are little known. In contrast to the
self-limited formation of native oxide on Bi<sub>2</sub>Se<sub>3</sub>, the degree of oxidation on the Bi<sub>2</sub>Se<sub>3</sub> surface
in oxygen plasma is enhanced. Results of transmission electron microscopy
and X-ray photoelectron spectroscopy show that the surface of the
oxidized Bi<sub>2</sub>Se<sub>3</sub> is composed of a layer of amorphous
bismuth oxide (BiO<sub><i>x</i></sub>), and the thickness
of the BiO<sub><i>x</i></sub> layer can be controlled by
the length of the plasma process. Electrical measurements of this
structure present the Schottky-type transport property at the interface
between the oxidized layer and the bulk Bi<sub>2</sub>Se<sub>3</sub> crystal, and the turn-on voltage depends on the thickness of the
surface BiO<sub><i>x</i></sub> layer. This study of the
structure, formation mechanism, and electrical properties of the surface
oxide of Bi<sub>2</sub>Se<sub>3</sub> formed in oxygen plasma provides
useful information for future development of electronic devices based
on bismuth chalcogenides