Block-Copolymer Assisted Fabrication of Anisotropic Plasmonic Nanostructures

The anisotropic nanostructures of noble metals are of great interest for plasmonic applications due to the possibility of tuning the localized surface plasmon resonance (LSPR) across the UV-VIS-NIR without sacrificing the linewidth as well as to achieve larger local field enhancement. Here, we report a simple and promising fabrication method of anisotropic gold nanostructures film using polystyrene-b-2vinylpyridine (PS-b-P2VP) block copolymers (BCP) as a template. In this approach, PS-b-P2VP spherical micelles were first synthesized as a template followed by selective deposition of Au precursor inside P2VP core of the micelles using ethanol solution of Au salt. Subsequently, heat treatment of the precursor deposited BCP films followed by removal of the BCP template produced anisotropic gold nanostructures of various shapes, such as octahedron, icosahedron, tetrahedron, and triangular prism. A temperature- and time-dependent annealing of the fabricated nanostructures led to the formation of clusters at higher temperatures. Furthermore, measurement of ensemble extinction spectra of the anisotropic Au nanoparticle films showed two broad distinct LSPR peaks; one in the visible range (~ 660 nm), and the other in the NIR range (~ 875 nm). The electrodynamic simulation showed that octahedron and icosahedron nanoparticles are responsible for the LSPR response in the visible; whereas the triangular shapes are responsible for the LSPR response in the NIR. Our work is expected to open up a new direction of synthesis of anisotropic nanostructures of noble metals that can be utilized to tune the LSPR response across the UV-VIS-NIR range using a simple BCP template-based method

Algorithm based high composition-controlled growths of GeSn on GaAs (001) via molecular beam epitaxy

The growth of high-composition GeSn films of the future will likely be guided via algorithms. In this study we show how a logarithmic-based algorithm can be used to obtain GeSn compositions up to 16 % on GaAs (001) substrates via molecular beam epitaxy. Within we demonstrate composition targeting and logarithmic gradients to achieve pseudomorph GeSn compositions near 11% before partial relaxation of the structure and a continued gradient to 16 % GeSn. Using algorithmic-based control and calibration, the ability to consistently and easily grow GeSn compositions above 20 % will likely become very possible. In this report, we use X-ray diffraction and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm

Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy

The growth of high-composition GeSn films in the future will likely be guided by algorithms. In this study, we show how a logarithmic-based algorithm can be used to obtain high-quality GeSn compositions up to 16% on GaAs (001) substrates via molecular beam epitaxy. Herein, we use composition targeting and logarithmic Sn cell temperature control to achieve linearly graded pseudomorph Ge1−xSnx compositions up to 10% before partial relaxation of the structure and a continued gradient up to 16% GeSn. In this report, we use X-ray diffraction, simulation, secondary ion mass spectrometry, and atomic force microscopy to analyze and demonstrate some of the possible growths that can be produced with the enclosed algorithm. This methodology of growth is a major step forward in the field of GeSn development and the first ever demonstration of algorithmically driven, linearly graded GeSn films

Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy

Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques. The nucleation of Ge proceeds by forming (111) oriented three-dimensional islands with two rotational twin domains about the growth axis. The boundaries between the twin grains are the origin of the 0.2% strain and tilt grains. The transition to a single-grain orientation reduces the strain and results in a better-quality Ge buffer. Understanding the role of thickness on material quality during the Ge(111)/Al2O3(0001) epitaxy is vital for achieving device quality when using group IV material on the sapphire platform