Gamma radiation exposure of MCT diode arrays

Investigations of electrical properties of long-wavelength infrared (LWIR) mercury cadmium telluride (MCT) arrays exposed to gamma-radiation have been performed. Resistance-area product characteristics of LWIR n{+}-p photodiodes have been investigated using microprobe technique at T=78 K before and after an exposure to various doses of gamma-radiation. The current transport mechanisms for those structures are described within the framework of the balance equation model taking into account the occupation of the trap states in the band gap.Comment: 11 pages, 4 figures, submitted to Semiconductor Science and Technolog

Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

Abstract. Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~

Oscillatory regularity of charge carrier traps energy spectra in silicon organic polymer poly(di-n-hexylsilane)

Charge carrier traps energy spectra have been investigated in silicon organic polymer poly(di-n-hexylsilane) by fractional thermally stimulated luminescence in the temperature range from 5 to 200 K. The energy spectrum of traps has been found to be discrete in nature, not the quasi-continuous, as it was considered earlier. It has been established that the traps energies form two characteristic series resulting from the vibrational quanta at 373 and 259 cm⁻¹, respectively. It is important that these vibrational quanta coincide with the frequencies of the totally symmetric vibrational modes of silicon chain which are active in Raman spectrum. The regularities mentioned are analyzed using the oscillatory traps model as the basis

Thermal imager based on the array light sensor device of 128×128 CdHgTe-photodiodes

The results of investigation of developed thermal imager for middle (3—5 µm) infrared region are presented and its applications features are discussed. The thermal imager consists of cooled to 80 K 128×128 diodes focal plane array on the base of cadmium–mercury–telluride compound and cryostat with temperature checking system. The photodiode array is bonded with readout device (silicon focal processor) via indium microcontacts. The measured average value of noise equivalent temperature difference was NETD= 20±4 mK (background radiation temperature T = 300 K, field of view 2θ = 180°, the cooled diaphragm was not used)