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2 research outputs found
Variations of hole mass in pMOSFETs under process induced stress
Author
Guillaume M. Mouis T.
Publication venue
'Lexxion Verlag'
Publication date
01/01/2005
Field of study
No full text
International audienc
Hal - Université Grenoble Alpes
Calculations of hole mass in [110]-uniaxially strained silicon for the stress engineering of p-MOS transistors
Author
Guillaume M. Mouis T.
Publication venue
'Elsevier BV'
Publication date
01/01/2006
Field of study
No full text
International audienc
Hal - Université Grenoble Alpes
No full text
No full text
