Blue emitting organic semiconductors under high pressure:status and outlook

The microstructure of ZK40, ZK40 with 2 wt% of Nd and Gd (ZK40-2Nd and ZK40-2Gd, respectively) were investigated with optical, scanning and transmission electron microscopy, X-ray diffraction and Scanning Kelvin Probe Force Microscopy. The mechanical properties and the corrosion behaviour were correlated with the microstructure. The 2 wt% Gd addition enhanced the ductility, while the Nd addition resulted in deterioration in mechanical properties. The corrosion behaviour was also enhanced with the addition of Gd

Second Order Phase Transition and Stabilizing CH···H and CH···S Interactions in Naphthyl End-Capped Bithiophene at 3.5 GPa

The semiconducting bithiophene systems are largely unexplored structurally at high-pressures. Here, we characterize the high-pressure structure and phase behavior of 5,5′-bis(naphth-2-yl)-2,2′-bithiophene (NaT2) by single crystal X-ray diffraction, photoluminescence and Raman compression measurements in the diamond anvil cell to 7.6 GPa. Experimental results are supported by empirical interaction energy calculations. NaT2 maintains its ambient pressure structure (P21/c) on compression but undergoes a subtle second-order phase transition at ca. 3.5 GPa. The newly formed phase at 4.0 GPa is characterized by the formation of a new S···H interaction between thiophene moieties in adjacent molecules, as well as by the emergence of a more favorable compression pathway in its long-chain direction. NaT2 also undergoes a band gap closure manifested as a distinct yellow to red color change on compression that is fully reversible on decompression.</p

Enhanced Piezoresponse and Nonlinear Optical Properties of Fluorinated Self-Assembled Peptide Nanotubes

Self-assembled L,L-diphenylalanine (FF) nanostructures offer an attractive platform for photonics and nonlinear optics. The nonlinear optical (NLO) coefficients of FF nanotubes depend on the diameter of the tube [S. Khanra et al. Phys. Chem. Chem. Phys. 19(4), 3084-3093 (2017)]. To further enhance the NLO properties of FF, we search for structural modifications. Here, we report on the synthesis of fluorinated FF dipeptides by replacing one ortho-hydrogen atom in each of the phenyl groups of FF by a fluorine atom. Density-functional theoretical calculations yield insights into minimum energy conformers of fluorinated FF (Fl-FF). Fl-FF self-assembles akin to FF into micron-length tubes. The effects of fluorination are evaluated on the piezoelectric response and nonlinear optical properties. The piezoelectric d15 coefficient of Fl-FF is found to be more than 10 times higher than that of FF nanotubes, and the intensity of second harmonic generation (SHG) polarimetry from individual Fl-FF nanotubes is more than 20 times that of individual FF nanotubes. Furthermore, we obtain SHG images to compare the intensities of FF and Fl-FF tubes. This work demonstrates the potential of fluorine substitution in other self-assembled biomimetic peptides for enhancing nonlinear optical response and piezoelectricity

Correlating charge transport to structure in deconstructed diketopyrrolopyrrole oligomers: A case study of a monomer in field-effect transistors

Copolymers based on diketopyrrolopyrrole (DPP) cores have attracted a lot of attention because of their high p-type as well as n-type carrier mobilities in organic field-effect transistors (FETs) and high power conversion efficiencies in solar cell structures. We report the structural and charge transport properties of n-dialkyl side-chain-substituted thiophene DPP end-capped with a phenyl group (Ph-TDPP-Ph) monomer in FETs which were fabricated by vacuum deposition and solvent coating. Grazing-incidence X-ray diffraction (GIXRD) from bottom-gate, bottom-contact FET architectures was measured with and without biasing. Ph-TDPP-Ph reveals a polymorphic structure with pi-conjugated stacking direction oriented in-plane. The unit cell comprises either one monomer with a = 20.89 angstrom, b = 13.02 angstrom, c = 5.85 angstrom, alpha = 101.4 degrees, beta = 90.6 degrees, and gamma = 94.7 degrees for one phase (TR1) or two monomers with a = 24.92 angstrom, b = 25.59 angstrom, c = 5.42 angstrom, alpha = 80.3 degrees, beta = 83.5 degrees, and gamma = 111.8 degrees for the second phase (TR2). The TR2 phase thus signals a shift from a coplanar to herringbone orientation of the molecules. The device performance is sensitive to the ratio of the two triclinic phases found in the film. Some of the best FET performances with p-type carrier mobilities of 0.1 cm(2)/V s and an on/off ratio of 10(6)are for films that comprise mainly the TR1 phase. GIXRD from in operando FETs demonstrates the crystalline stability of Ph-TDPP-Ph

Solution-Processed Organic and ZnO Field-Effect Transistors in Complementary Circuits

The use of high κ dielectrics lowers the operating voltage in organic field-effect transistors (FETs). Polymer ferroelectrics open the path not just for high κ values but allow processing of the dielectric films via electrical poling. Poled ferroelectric dielectrics in p-type organic FETs was seen to improve carrier mobility and reduce leakage current when compared to unpoled devices using the same dielectric. For n-type FETs, solution-processed ZnO films provide a viable low-cost option. UV–ozone-treated ZnO films was seen to improve the FET performance due to the filling of oxygen vacancies. P-type FETs were fabricated using the ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) as the dielectric along with a donor–acceptor polymer based on diketopyrrolopyrrole (DPP-DTT) as the semiconductor layer. The DPP-DTT FETs yield carrier mobilities upwards of 0.4 cm2/Vs and high on/off ratios when the PVDF-TrFE layer is electrically poled. For n-type FETs, UV–ozone-treated sol–gel ZnO films on SiO2 yield carrier mobilities of 10−2 cm2/Vs. DPP-DTT-based p- and ZnO-based n-type FETs were used in a complementary voltage inverter circuit, showing promising characteristic gain. A basic inverter model was used to simulate the inverter characteristics, using parameters from the individual FET characteristics.</jats:p