29,675 research outputs found

    Microwave performance of high-density bulk MgB2

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    We have performed microwave measurements on superconducting hot-isostatically- pressed (HIPed) bulk MgB2 using a parallel-plate resonator technique. The high density and strength of the HIPed material allowed preparation of samples with mirror-like surfaces for microwave measurements. The microwave surface resistance decreased by about 40% at 20 K when the root-mean-square surface roughness was reduced from 220 nm to 110 nm through surface-polishing and ion-milling. The surface resistance was independent of surface microwave magnetic field at least up to 4 Oe and below 30 K. We attribute this behavior, and the overall low surface resistance (~0.8 mOhms at 10 GHz and 20 K), to the high density of our samples and the absence of weak links between grains

    Neutron scattering study of spin ordering and stripe pinning in superconducting La1.93_{1.93}Sr0.07_{0.07}CuO4_4

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    The relationships among charge order, spin fluctuations, and superconductivity in underdoped cuprates remain controversial. We use neutron scattering techniques to study these phenomena in La1.93_{1.93}Sr0.07_{0.07}CuO4_4, a superconductor with a transition temperature of Tc=20T_c = 20~K. At T≪TcT\ll T_c, we find incommensurate spin fluctuations with a quasielastic energy spectrum and no sign of a gap within the energy range from 0.2 to 15 meV. A weak elastic magnetic component grows below ∼10\sim10~K, consistent with results from local probes. Regarding the atomic lattice, we have discovered unexpectedly strong fluctuations of the CuO6_6 octahedra about Cu-O bonds, which are associated with inequivalent O sites within the CuO2_2 planes. Furthermore, we observed a weak elastic (33ˉ0)(3\bar{3}0) superlattice peak that implies a reduced lattice symmetry. The presence of inequivalent O sites rationalizes various pieces of evidence for charge stripe order in underdoped \lsco. The coexistence of superconductivity with quasi-static spin-stripe order suggests the presence of intertwined orders; however, the rotation of the stripe orientation away from the Cu-O bonds might be connected with evidence for a finite gap at the nodal points of the superconducting gap function.Comment: 13 pages, 11 figures; accepted versio

    Significant neutrinoless double beta decay with quasi-Dirac neutrinos

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    A significant signal of neutrinoless double beta decay can be consistent with the existence of light quasi-Dirac neutrinos. To demonstrate this possibility, we consider a realistic model where the neutrino masses and the neutrinoless double beta decay can be simultaneously generated after a Peccei-Quinn symmetry breaking.Comment: 5 pages, 3 figures, 1 table. Journal versio

    Hysteretic ac losses in a superconductor strip between flat magnetic shields

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    Hysteretic ac losses in a thin, current-carrying superconductor strip located between two flat magnetic shields of infinite permeability are calculated using Bean's model of the critical state. For the shields oriented parallel to the plane of the strip, penetration of the self-induced magnetic field is enhanced, and the current dependence of the ac loss resembles that in an isolated superconductor slab, whereas for the shields oriented perpendicular to the plane of the strip, penetration of the self-induced magnetic field is impaired, and the current dependence of the ac loss is similar to that in a superconductor strip flanked by two parallel superconducting shields. Thus, hysteretic ac losses can strongly augment or, respectively, wane when the shields approach the strip.Comment: 9 pages, 5 figures, submitted to PR

    Theory and design of Inx_{x}Ga1−x_{1-x}As1−y_{1-y}Biy_{y} mid-infrared semiconductor lasers: type-I quantum wells for emission beyond 3 μ\mum on InP substrates

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    We present a theoretical analysis and optimisation of the properties and performance of mid-infrared semiconductor lasers based on the dilute bismide alloy Inx_{x}Ga1−x_{1-x}As1−y_{1-y}Biy_{y}, grown on conventional (001) InP substrates. The ability to independently vary the epitaxial strain and emission wavelength in this quaternary alloy provides significant scope for band structure engineering. Our calculations demonstrate that structures based on compressively strained Inx_{x}Ga1−x_{1-x}As1−y_{1-y}Biy_{y} quantum wells (QWs) can readily achieve emission wavelengths in the 3 -- 5 μ\mum range, and that these QWs have large type-I band offsets. As such, these structures have the potential to overcome a number of limitations commonly associated with this application-rich but technologically challenging wavelength range. By considering structures having (i) fixed QW thickness and variable strain, and (ii) fixed strain and variable QW thickness, we quantify key trends in the properties and performance as functions of the alloy composition, structural properties, and emission wavelength, and on this basis identify routes towards the realisation of optimised devices for practical applications. Our analysis suggests that simple laser structures -- incorporating Inx_{x}Ga1−x_{1-x}As1−y_{1-y}Biy_{y} QWs and unstrained ternary In0.53_{0.53}Ga0.47_{0.47}As barriers -- which are compatible with established epitaxial growth, provide a route to realising InP-based mid-infrared diode lasers.Comment: Submitted versio

    Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

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    Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).Comment: 2 new references adde

    Single-particle-sensitive imaging of freely propagating ultracold atoms

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    We present a novel imaging system for ultracold quantum gases in expansion. After release from a confining potential, atoms fall through a sheet of resonant excitation laser light and the emitted fluorescence photons are imaged onto an amplified CCD camera using a high numerical aperture optical system. The imaging system reaches an extraordinary dynamic range, not attainable with conventional absorption imaging. We demonstrate single-atom detection for dilute atomic clouds with high efficiency where at the same time dense Bose-Einstein condensates can be imaged without saturation or distortion. The spatial resolution can reach the sampling limit as given by the 8 \mu m pixel size in object space. Pulsed operation of the detector allows for slice images, a first step toward a 3D tomography of the measured object. The scheme can easily be implemented for any atomic species and all optical components are situated outside the vacuum system. As a first application we perform thermometry on rubidium Bose-Einstein condensates created on an atom chip.Comment: 24 pages, 10 figures. v2: as publishe
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