Specimen preparation methods for elemental characterisation of grain boundaries and isolated dislocations in multicrystalline silicon using atom probe tomography

Multicrystalline silicon (mc-Si) is a cost effective feedstock for solar photovoltaic devices but is limited by the presence of defects and impurities. Imaging impurities segregated to nanometre-scale dislocations and grain boundaries is a challenge that few materials characterisation techniques can achieve. Atom Probe Tomography (APT) is a 3-dimensional time-of-flight microscopy technique that can image the distribution of elements at the atomic scale, however one of the most challenging factors when using APT is the complexity of specimen preparation for specific regions of interest. Atom probe specimen preparation methods have been developed in a dual FIB/SEM system that enable a specific extended defect such as an isolated dislocation or a section of a grain boundary to be selected for APT analysis. The methods were used to fabricate APT specimens from an isolated dislocation and a grain boundary in mc-Si samples. Complementary TEM images confirm the presence of the defects in both specimens, whilst APT analyses also reveal segregation of impurities to the defects

Environmentally-assisted grain boundary attack as a mechanism of embrittlement in a nickel-based superalloy

The loss of ductility in the high strength polycrystalline superalloy 720Li is studied in air between room temperature and 1000 °C. Tensile ductility is influenced profoundly by the environment, leading to a pronounced minimum at 750 °C. A relationship between tensile ductility and oxidation kinetics is identified. The physical factors responsible for the ductility dip are established using energy-dispersive X-ray spectroscopy, nanoscale secondary ion mass spectrometry and the analysis of electron backscatter diffraction patterns. Embrittlement results from internal intergranular oxidation along the γ -grain boundaries, and in particular, at incoherent interfaces of the primary γ′ precipitates with the matrix phase. These fail under local microstresses arising from the accumulation of dislocations during slip-assisted grain boundary sliding. Above 850 °C, ductility is restored because the accumulation of dislocations at grain boundaries is no longer prevalent

Microstructural characterization of transparent silicon oxide permeation barrier coatings on PET

The aim of this study was to correlate the microstructure and gas barrier performance of nanocomposite films. A range of SiOx layers of varying thickness (13 to 316 nm), deposited by electron beam evaporation on polyethylene terephthalate substrates, have been investigated. The gas barrier properties of the films have been measured for several gases, namely He, Ne, Ar and O. A variety of techniques have been used to microstructurally characterize the oxide coating. It was found that the barrier layer was uniform, amorphous and free of macro-scale defects. A theoretical model has been proposed that describes the SiOx layer as a solid with a pore size distribution of 2.7 to 4 angstroms. Using this model, it is possible to account for the gas transmission properties exhibited by the films.</p

Study of the structural, electric and magnetic properties of Mn-doped Bi2Te3 single crystals

Breaking the time reversal symmetry of a topological insulator, for example by the presence of magnetic ions, is a prerequisite for spin-based electronic applications in the future. In this regard Mn-doped Bi2Te3 is a prototypical example that merits a systematic investigation of its magnetic properties. Unfortunately, Mn doping is challenging in many host materials—resulting in structural or chemical inhomogeneities affecting the magnetic properties. Here, we present a systematic study of the structural, magnetic and magnetotransport properties of Mn-doped Bi2Te3 single crystals using complimentary experimental techniques. These materials exhibit a ferromagnetic phase that is very sensitive to the structural details, with TC varying between 9 and 13 K (bulk values) and a saturation moment that reaches 4.4(5) μB per Mn in the ordered phase. Muon spin rotation suggests that the magnetism is homogeneous throughout the sample. Furthermore, torque measurements in fields up to 33 T reveal an easy axis magnetic anisotropy perpendicular to the ab-plane. The electrical transport data show an anomaly around TC that is easily suppressed by an applied magnetic field, and also anisotropic behavior due to the spin-dependent scattering in relation to the alignment of the Mn magnetic moment. Hall measurements on different crystals established that these systems are n-doped with carrier concentrations of ~ 0.5–3.0 × 1020 cm−3. X-ray magnetic circular dichroism (XMCD) at the Mn L2,3 edge at 1.8 K reveals a large spin magnetic moment of 4.3(3) μB/Mn, and a small orbital magnetic moment of 0.18(2) μB/Mn. The results also indicate a ground state of mixed d4–d5–d6 character of a localized electronic nature, similar to the diluted ferromagnetic semiconductor Ga1−xMnxAs. XMCD measurements in a field of 6 T give a transition point at T ≈ 16 K, which is ascribed to short range magnetic order induced by the magnetic field. In the ferromagnetic state the easy direction of magnetization is along the c-axis, in agreement with bulk magnetization measurements. This could lead to gap opening at the Dirac point, providing a means to control the surface electric transport, which is of great importance for applications.ISSN:1367-263