Trap-Assisted Tunneling in the Schottky Barrier

The paper presents a new way how to calculate the currents in a Schottky barrier. The novel phenomeno-logical model extends the Shockley-Read-Hall recombi-nation-generation theory of trap-assisted tunneling. The proposed approach explains the occurrence of large leakage currents in Schottky structures on wide band semi-conductors with a high Schottky barrier (above 1 eV) and with a high density of traps. Under certain conditions, trap-assisted tunneling (TAT) plays a more important role than direct tunneling

A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling

The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk’s model of trap-assisted tunneling. The new approach takes into account generation and recombination as well as tunneling processes in pn-junctions. Using this model, the real “soft” I-V curve usually observed in the case of switching diodes and transistors was modeled as a result of the high concentration of traps that assist in the process of tunneling