Evaporation and Discharge Dynamics of Highly Charged Multicomponent Droplets Generated by Electrospray Ionization

We investigate the Rayleigh discharge and evaporation dynamics of highly charged two-component droplets consisting principally of methanol with 2-methoxyethanol, tert-butanol, or m-nitrobenzyl alcohol. A phase Doppler anemometer (PDA) characterizes droplets generated by electrospray ionization (ESI) according to size, velocity, and charge as they move through a uniform electric field within an ion mobility spectrometer (IMS). Repeated field reversals result in droplet “ping-pong” through the PDA. This generates individual droplet histories of solvent evaporation behavior and the dynamics of charge loss to progeny droplets during Rayleigh discharge events. On average, methanol droplets discharge at 127% their Rayleigh limit of charge, q_R, and release 25% of the net charge. Charge loss from methanol/2-methoxyethanol droplets behaves similarly to pure 2-methoxyethanol droplets which release ~28% of their net charge. Binary methanol droplets containing up to 50% tert-butanol discharge at a lower percent q_R than pure methanol and release a greater fraction of their net charge. Mixed 99% methanol/1% m-nitrobenzyl alcohol droplets possess discharge characteristics similar to those of methanol. However, droplets of methanol containing 2% m-nitrobenzyl evaporate down to a fixed size and charge that remains constant with no observable discharges. Quasi-steady-state evaporation models accurately describe observed evaporation phenomena in which methanol/tert-butanol droplets evaporate at a rate similar to that of pure methanol and methanol/2-methoxyethanol droplets evaporate at a rate similar to that of 2-methoxyethanol. We compare these results to previous Rayleigh discharge experiments and discuss the implications for binary solvents in electrospray mass spectrometry (ESI-MS) and field-induced droplet ionization mass spectrometry (FIDI-MS)

Photoelectrochemical Behavior of n-Type GaAs(100) Electrodes Coated by a Single Layer of Graphene

Methods for cell-selective analysis of proteome dynamics will facilitate studies of biological processes in multicellular organisms. Here we describe a mutant murine methionyl-tRNA synthetase (designated L274GMmMetRS) that charges the noncanonical amino acid azidonorleucine (Anl) to elongator tRNA^(Met) in hamster (CHO), monkey (COS7), and human (HeLa) cell lines. Proteins made in cells that express the synthetase can be labeled with Anl, tagged with dyes or affinity reagents, and enriched on affinity resin to facilitate identification by mass spectrometry. The method does not require expression of orthogonal tRNAs or depletion of canonical amino acids. Successful labeling of proteins with Anl in several mammalian cell lines demonstrates the utility of L274GMmMetRS as a tool for cell-selective analysis of mammalian protein synthesis

Osteochondritis Dissecans Development after Bone Contusion of the Knee in the Skeletally Immature: A Case Series

Osteochondritis dissecans (OCD) is thought to be an acquired osteochondral disorder, and its etiology may be multi-factorial. Trauma, both acute and repetitive events, has previously been proposed as a potential cause for OCD development. We present two cases of skeletally immature males who developed a symptomatic OCD lesion following a femoral condyle bone contusion. These cases suggest that an acute traumatic event may lead to the development of OCD of the knee

820 mV open-circuit voltages from Cu_(2)O/CH_(3)CN junctions

P-Type cuprous oxide (Cu_(2)O) photoelectrodes prepared by the thermal oxidation of Cu foils exhibited open-circuit voltages in excess of 800 mV in nonaqueous regenerative photoelectrochemical cells. In contact with the decamethylcobaltocene^(+/0) (Me_(10)CoCp_(2)^(+/0)) redox couple, cuprous oxide yielded open-circuit voltage, V_(oc), values of 820 mV and short-circuit current density, J_(sc), values of 3.1 mA cm^(−2) under simulated air mass 1.5 illumination. The energy-conversion efficiency of 1.5% was limited by solution absorption and optical reflection losses that reduced the short-circuit photocurrent density. Spectral response measurements demonstrated that the internal quantum yield approached unity in the 400–500 nm spectral range, but poor red response, attributable to bulk recombination, lowered the overall efficiency of the cell. X-Ray photoelectron spectroscopy and Auger electron spectroscopy indicated that the photoelectrodes had a high-quality cuprous oxide surface, and revealed no observable photocorrosion during operation in the nonaqueous electrolyte. The semiconductor/liquid junctions thus provide a noninvasive method to investigate the energy-conversion properties of cuprous oxide without the confounding factors of deleterious surface reactions

Enhanced Stability and Efficiency for Photoelectrochemical Iodide Oxidation by Methyl Termination and Electrochemical Pt Deposition of n-Si Microwire Arrays

Arrays of Si microwires doped n-type (n-Si) and surface-functionalized with methyl groups have been used, with or without deposition of Pt electrocatalysts, to photoelectrochemically oxidize I–(aq) to I_3–(aq) in 7.6 M HI(aq). Under conditions of iodide oxidation, methyl-terminated n-Si microwire arrays exhibited stable short-circuit photocurrents over a time scale of days, albeit with low energy-conversion efficiencies. In contrast, electrochemical deposition of Pt onto methyl-terminated n-Si microwire arrays consistently yielded energy-conversion efficiencies of ∼2% for iodide oxidation, with an open-circuit photovoltage of ∼400 mV and a short-circuit photocurrent density of ∼10 mA cm^(–2) under 100 mW cm^(–2) of simulated air mass 1.5G solar illumination. Platinized electrodes were stable for >200 h of continuous operation, with no discernible loss of Si or Pt. Pt deposited using electron-beam evaporation also resulted in stable photoanodic operation of the methyl-terminated n-Si microwire arrays but yielded substantially lower photovoltages than when Pt was deposited electrochemically

Comparison of the Photoelectrochemical Behavior of H‑Terminated and Methyl-Terminated Si(111) Surfaces in Contact with a Series of One-Electron, Outer-Sphere Redox Couples in CH_3CN

The photoelectrochemical behavior of methyl-terminated p-type and n-type Si(111) surfaces was determined in contact with a series of one-electron, outer-sphere, redox couples that span >1 V in the Nernstian redox potential, E(A/A^−), of the solution. The dependence of the current vs potential data, as well as of the open-circuit photovoltage, V_(OC), on E(A/A^−) was compared to the behavior of H-terminated p-type and n-type Si(111) surfaces in contact with these same electrolytes. For a particular E(A/A^−) value, CH_3-terminated p-Si(111) electrodes showed lower V_(OC) values than Hterminated p-Si(111) electrodes, whereas CH_3-terminated n-Si(111) electrodes showed higher V_(OC) values than H-terminated n-Si(111) electrodes. Under 100 mW cm^(−2) of ELH-simulated Air Mass 1.5 illumination, n-type H−Si(111) and CH_3−Si(111) electrodes both demonstrated nonrectifying behavior with no photovoltage at very negative values of E(A/A^−) and produced limiting V_(OC) values of >0.5 V at very positive values of E(A/A^−). Illuminated p-type H−Si(111) and CH_3−Si(111) electrodes produced no photovoltage at positive values of E(A/A^−) and produced limiting V_(OC) values in excess of 0.5 V at very negative values of E(A/A^−). In contact with CH_3CN-octamethylferrocene^(+/0), differential capacitance vs potential experiments yielded a −0.40 V shift in flat-band potential for CH_3-terminated n-Si(111) surfaces relative to H-terminated n-Si(111) surfaces. Similarly, in contact with CH_3CN-1,1′-dicarbomethoxycobaltocene^(+/0), the differential capacitance vs potential data indicated a −0.25 V shift in the flat-band potential for CH_3-terminated p-Si(111) electrodes relative to H-terminated p-Si(111) electrodes. The observed trends in V_(OC) vs E(A/A^−), and the trends in the differential capacitance vs potential data are consistent with a negative shift in the interfacial dipole as a result of methylation of the Si(111) surface. The negative dipole shift is consistent with a body of theoretical and experimental comparisons of the behavior of CH_3−Si(111) surfaces vs H−Si(111) surfaces, including density functional theory of the sign and magnitude of the surface dipole, photoemission spectroscopy in ultrahigh vacuum, the electrical behavior of Hg/Si contacts, and the pH dependence of the current−potential behavior of Si electrodes in contact with aqueous electrolytes

Photoelectrochemical Behavior of n‑type Si(100) Electrodes Coated with Thin Films of Manganese Oxide Grown by Atomic Layer Deposition

Thin (10 nm) films of manganese oxide have been deposited by atomic layer deposition (ALD) onto n-type silicon and onto degenerately doped p-type silicon. The photoelectrochemical properties of the resulting semiconductor/metal-oxide structures were evaluated in contact with aqueous 0.35 M K_4Fe(CN)_6−0.05 M K_3Fe(CN)_6, 1.0 M KOH(aq), as well as in contact with a series of nonaqueous one electron, reversible, outer-sphere redox systems. Under simulated air mass (AM) 1.5 illumination in contact with 0.35 M K_4Fe(CN)_6−0.05 M K_3Fe(CN)_6(aq), MnO-coated n-Si photoanodes displayed open-circuit voltages of up to 550 mV and stable anodic currents for periods of hours at 0.0 V versus the solution potential. In contact with 1.0 M KOH(aq), at current densities of ∼25 mA cm^(−2), MnO|Si photoanodes under 100 mW cm^(−2) of simulated AM 1.5 illuminationyielded stable oxygen evolution for 10−30 min. Variation in the thickness of the MnO films from 4 to 20 nm indicated the presence of a series resistance in the MnO film that limited the fill factor and thus the solar energy-conversion efficiency of the photoelectrodes. Open-circuit photovoltages of 30 and 450 mV, respectively, were observed in contact with cobaltocene^(+/0) or ferrocene^(+/0) in CH_3CN, indicating that the energetics of the MnO-coated Si surfaces were a function of the electrochemical potential of the contacting electrolyte solution

Highly stable and efficient all-inorganic lead-free perovskite solar cells with native-oxide passivation

There has been an urgent need to eliminate toxic lead from the prevailing halide perovskite solar cells (PSCs), but the current lead-free PSCs are still plagued with the critical issues of low efficiency and poor stability. This is primarily due to their inadequate photovoltaic properties and chemical stability. Herein we demonstrate the use of the lead-free, allinorganic cesium tin-germanium triiodide (CsSn0.5Ge0.5I3) solid-solution perovskite as the light absorber in PSCs, delivering promising efficiency of up to 7.11%. More importantly, these PSCs show very high stability, with less than 10% decay in efficiency after 500 h of continuous operation in N2 atmosphere under one-sun illumination. The key to this striking performance of these PSCs is the formation of a full-coverage, stable native-oxide layer, which fully encapsulates and passivates the perovskite surfaces. The native-oxide passivation approach reported here represents an alternate avenue for boosting the efficiency and stability of lead-free PSCs