Pathogen reduction/inactivation of products for the treatment of bleeding disorders:what are the processes and what should we say to patients?

Patients with blood disorders (including leukaemia, platelet function disorders and coagulation factor deficiencies) or acute bleeding receive blood-derived products, such as red blood cells, platelet concentrates and plasma-derived products. Although the risk of pathogen contamination of blood products has fallen considerably over the past three decades, contamination is still a topic of concern. In order to counsel patients and obtain informed consent before transfusion, physicians are required to keep up to date with current knowledge on residual risk of pathogen transmission and methods of pathogen removal/inactivation. Here, we describe pathogens relevant to transfusion of blood products and discuss contemporary pathogen removal/inactivation procedures, as well as the potential risks associated with these products: the risk of contamination by infectious agents varies according to blood product/region, and there is a fine line between adequate inactivation and functional impairment of the product. The cost implications of implementing pathogen inactivation technology are also considered

OLED-on-CMOS integration for optoelectronic sensor applications

Highly-efficient, low-voltage organic light emitting diodes (OLEDs) are well suitable for post-processing integration onto the top metal layer of CMOS devices. This has been proven for OLED microdisplays so far. Moreover, OLEDon-CMOS technology may also be excellently suitable for various optoelectronic sensor applications by combining highly efficient emitters, use of low-cost materials and cost-effective manufacturing together with silicon-inherent photodetectors and CMOS circuitry. The use of OLEDs on CMOS substrates requires a top-emitting, low-voltage and highly efficient OLED structure. By reducing the operating voltage for the OLED below 5V, the costs for the CMOS process can be reduced, because a process without high-voltage option can be used. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on different dualmetal layer CMOS test substrates without active transistor area. Afterwards, the different devices were measured and compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m2 for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m2 for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m2 for the white fluorescent emitting OLED have been achieved here. Therefore, those OLED stacks are suitable for use in a CMOS process even within a regular 5V process option. Moreover, the operating voltage achieved so far is expected to be reduced further when using different top electrode materials. Integrating such OLEDs on a CMOS-substrate provide a preferable choice for silicon-based optical Microsystems targeted towards optoelectronic sensor applications, as there are integrated light barriers, optocouplers, or lab-onchip devices

Flow sensor based on monolithic integration of organic light-emitting diodes (OLED's) and CMOS circuits

In this paper we present an optoelectronic integrated circuit (OEIC) based on monolithic integration of organic light-emitting diodes (OLED's) and CMOS technology. By the use of integrated circuits, photodetectors and highly efficient OLED's on the same silicon chip, novel OEIC's with combined sensors and actuating elements can be realized. The OLED's are directly deposited on the CMOS top metal. The metal layer serves as OLED bottom electrode and determines the bright area. Furthermore, the area below the OLED electrodes can be used for integrated circuits. The monolithic integration of actuators, sensors and electronics on a common silicon substrate brings significant advantages in most sensory applications. The developed OEIC combines three different types of sensors: a reflective sensor, a color sensor and a particle flow sensor and is configured with an orange (597nm) emitting p-i-n OLED. We describe the architecture of such a monolithic OEIC and demonstrate a meth od to determine the velocity of a fluid being conveyed pneumatically in a transparent capillary. The integrated OLED's illuminate the capillary with the flowing fluid. The fluid has a random reflection profile. Depending on the velocity and a random contrast difference, more or less light is reflected back to the substrate. The integrated photodiodes located at different fixed points detect the reflected light and using cross-correlation, the velocity is calculated from the time in which contrast differences move over a fixed distance

Integration of high-efficiency PIN organic light-emitting devices in lighting and optoelectronic applications

Displays based on organic light-emitting diodes (OLED) have rapidly developed and are commercially available since some time. However, in order to achieve large market penetration in new segments like lighting and optoelectronic, it is generally expected that the current status of the field has to advance in terms of manufacturing cost and integration possibilities. OLED devices with electrically doped transport layers show low operating voltage, high efficiency and long lifetime. In this paper we demonstrate that the concept of p- and n-type electrical doping can be applied under manufacturing conditions on the worldwide first vertical in-line fabrication setup for large area lighting applications. An in-linemanufactured highly efficient white-OLED-system will be presented. The driving of large area lighting tiles defines the resulting OLED lifetime and efficiency. In this paper we will present first results on the driving of large area lighting panels. Beside the lighting application the integration of highly efficient OLEDs for optoelectronic applications is an opportunity for innovative new applications. Microdisplays, integrated optocoupler and light barriers are few examples for the potential of OLEDs in optoelectronic applications. We will present results regarding the integration of highly efficient top-emitting PIN OLEDsTM for optoelectronic applications

OLED-on-CMOS - optoelectronic devices with embedded light emitter

Highly-efficient, low-voltage organic light emitting diodes (OLED) are well suitable for post-processing integration onto the top metal layer of CMOS devices. The operation of OLEDs on active matrix CMOS substrates requires a top-emitting, low-voltage OLED stack. Low operating voltage devices can be achieved applying the concept of electrical doping of the charge transport layers of the OLED. Devices with very high power efficiency can be prepared when combining the concept of electrical doping with highly efficient emitter systems. The typical device architecture is the so-called p-i-n- stacking (intrinsic emitter layer and blocking layers sandwiched between doped p- and n-type transport layers). Although OLED-on-CMOS micro-displays are on the market already, those devices have not yet been shown with p-i-n technology, i.e. with low operating voltage at high brightness. Red, orange, white, green and blue OLED-stacks with doped charge transport layers were prepared on various CMOS test substrates. The different devices were compared with respect to their performance (current, luminance, voltage, luminance dependence on viewing angle, optical outcoupling etc.). Low operating voltages of 2.4V at 100cd/m² for the red p-i-n type phosphorescent emitting OLED stack, 2.5V at 100cd/m² (3.3V@1000cd/m²) for the orange phosphorescent emitting OLED stack and 3.2V at 100cd/m² (4.7V@1000cd/m²) for the white fluorescent emitting OLED have been achieved. By monolithically combining OLED with CMOS circuitry in a single device, specific OLED advantages (efficiency, low voltage, high brightness, spectral characteristics (VIS/NIR) allow to address several new and alternative applications, going far beyond the current major application in small and medium displays. This is especially based on CMOS capabilities for implementation of various sensing devices (e.g., photodetectors). By OLED-on-CMOS technology, it becomes possible to supplement integrated optical sensors by an efficient and stable light source inside the silicon, both driven, read-out and controlled by embedded CMOS circuitry. Moreover, the light emitter is placed above the CMOS electronics, therefore saving expensive chip area without requiring additional space. That combination allows advanced devices and applications, e.g., OLED microdisplays with embedded image detector (camera), or optoelectronic sensors with embedded light source. Applications address mainly two areas: advanced microdisplays (e.g., head-mounted display with integrated eye-tracking), and optical sensors (e.g., light barriers, lab-on-chip, optocouplers)

Recombinant ADAMTS13 normalizes von Willebrand factor-cleaving activity in plasma of acquired TTP patients by overriding inhibitory antibodies

Severe deficiency of the von Willebrand factor (VWF)-cleaving protease ADAMTS13 as observed in acquired thrombotic thrombocytopenic purpura (TTP) is caused by inhibitory and non-inhibitory autoantibodies directed against the protease. Current treatment with plasma exchange is considered to remove circulating antibodies and to concurrently replenish the deficient enzyme

Thin-film transistors and circuits on plastic foil

We present our recent achievements in organic semiconductor technology in two emerging application areas. We show that the performance of our technology approaches the requirements for Electronic Product Coding RFID tags. Also, backplanes of OLED displays are enabled by the unique compatibility of pentacene transistors with high-k gate dielectrics. © 2009 IEEE