Dependence of a rabbit's reaction on the frequency of repetition of an impulse and current exposition in experiment

Now electroshock devices are used as a civilian weapon for self-defense and as a non-lethal weapon in the police. Therefore, medical-biological safety testing of electroshock devices should be carried out. Development of hygienic regulations is relevant as well. The aim of our work is the study of the biological effects of pulsed current depending on the pulse frequency, pulse amplitude and exposure. Material and methods. We compared the biological effects with varying frequency of the current pulse (50, 400, and 600 Hz) with varying exposure (0.25, 0.5 and 1.0 s.). Average pulse power in all cases was equal, and the pulse energy was different. Experiments were performed on rabbits. Biological effects of stun device were evaluated by clinical lesions, as well as electrophysiological parameters: ECG and electro-pneumogram. Results. Response was observed only in the current period (0.25 s, 0.5 s or 1 s) was disorientation, convulsing, dyspnea. The degree of severity of the reaction was determined by a combination of pulse repetition frequency and exposure. Immediately after switching off the current noted vocalization, decreased heart rate and breathing. Heart rate and respiration in 5 minutes back to the normal values. Conclusions. In the results of the research has got a comparative classification organism's response (based on a points system) as well as the characteristic of the biological response of the individual systems of the body on the parameters of the current pulse

High-temperature quantum kinetic effect in silicon nanosandwiches

The negative- U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport, with the reduction of the electron-electron interaction. The aforesaid promotes also the creation of composite bosons and fermions by the capture of single magnetic flux quanta on the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of the quantum kinetic phenomena in weak magnetic fields at high-temperatures up to the room temperature. As a certain version noted above we present the first findings of the high temperature de Haas-van Alphen, 300 K, quantum Hall, 77 K, effects as well as quantum conductance staircase in the silicon sandwich structure that represents the ultra-narrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface