273 research outputs found

    Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

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    International audienceWe show the role played by the buffer surface morphology and by alloying effects on the size, shape and lateral distribution of InAs nanostructures grown on InP001 substrates by molecular beam epitaxy. Three buffers, viz., In 0.53 Ga 0.47 As, In 0.52 Al 0.48 As, and InP lattice matched on InP have been studied. Differences in nanostructure morphology and in carrier confinement have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements, respectively. Alongside the classical relaxation mode through two-dimensional/three-dimensional surface morphology change, a chemical relaxation mode has to be introduced as a competitive mode of relaxation of strained layers. This chemical relaxation mode, due to alloying between the InAs deposit and the buffer, is thought to be responsible for most of the observed differences in the InAs nanostructure properties

    Spin injection in Silicon at zero magnetic field

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    In this letter, we show efficient electrical spin injection into a SiGe based \textit{p-i-n} light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electrons spin polarization is then analysed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field \textit{i.e.} in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3 % at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.Comment: accepted in AP

    Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

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    International audienceInAs nanostructures were grown on In 0.52 Al 0.48 As alloy lattice matched on InP001 substrates by molecular beam epitaxy using specific growth parameters in order to improve island self-organization. We show how the change in InAs surface reconstruction via growth temperature from (24) to (21) and/or the use of InAlAs initial buffer surface treatments improve the island shape homogeneity either as quantum wires or as quantum dots. Differences in island shape and in carrier confinement are shown by atomic force microscopy and by photoluminescence measurements, respectively. We point out that such shape amendments induce drastic improvements to island size distribution and discernible changes in photoluminescence properties, in particular concerning polarization

    Manifestation of ageing in the low temperature conductance of disordered insulators

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    We are interested in the out of equilibrium phenomena observed in the electrical conductance of disordered insulators at low temperature, which may be signatures of the electron coulomb glass state. The present work is devoted to the occurrence of ageing, a benchmark phenomenon for the glassy state. It is the fact that the dynamical properties of a glass depend on its age, i.e. on the time elapsed since it was quench-cooled. We first critically analyse previous studies on disordered insulators and question their interpretation in terms of ageing. We then present new measurements on insulating granular aluminium thin films which demonstrate that the dynamics is indeed age dependent. We also show that the results of different relaxation protocols are related by a superposition principle. The implications of our findings for the mechanism of the conductance slow relaxations are then discussed

    History-dependent relaxation and the energy scale of correlation in the Electron-Glass

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    We present an experimental study of the energy-relaxation in Anderson-insulating indium-oxide films excited far from equilibrium. In particular, we focus on the effects of history on the relaxation of the excess conductance dG. The natural relaxation law of dG is logarithmic, namely dG=-log(t). This may be observed over more than five decades following, for example, cool-quenching the sample from high temperatures. On the other hand, when the system is excited from a state S_{o} in which it has not fully reached equilibrium to a state S_{n}, the ensuing relaxation law is logarithmic only over time t shorter than the time t_{w} it spent in S_{o}. For times t>t_{w} dG(t) show systematic deviation from the logarithmic dependence. It was previously shown that when the energy imparted to the system in the excitation process is small, this leads to dG=P(t/t_{w}) (simple-aging). Here we test the conjecture that `simple-aging' is related to a symmetry in the relaxation dynamics in S_{o} and S_{n}. This is done by using a new experimental procedure that is more sensitive to deviations in the relaxation dynamics. It is shown that simple-aging may still be obeyed (albeit with a modified P(t/t_{w})) even when the symmetry of relaxation in S_{o} and S_{n} is perturbed by a certain degree. The implications of these findings to the question of aging, and the energy scale associated with correlations are discussed

    Growth of GaInTlAs layers on InP by molecular beam epitaxy

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    International audienceGrowth of GaInTlAs alloys on InP001 has been attempted by solid source molecular beam epitaxy. Thallium incorporation into Ga 1x In x As matrices was studied as a function of substrate temperature, arsenic overpressure, matrix composition, and growth rate. At high temperatures 350 °C thallium evaporates, whereas at intermediary temperatures 270-350 °C thallium segregates into droplets on the surface. Only in the low temperature range 180-260 °C can thallium be incorporated in some conditions, leading to mirror-like surfaces. Up to 18% Tl content was incorporated into a Ga 0.70 In 0.30 As matrix and up to 40% Tl into a GaAs matrix. For these high Tl concentrations, Tl droplets are avoided and Tl incorporation is achieved only when using high arsenic pressures. However, this limits surface adatom diffusion and leads to amorphous, polycrystalline, or twinned materials. Finally, a narrow window for single-crystal growth has been found for low Tl contents 4% using optimized growth conditions with low V/III pressure ratios and high growth rates

    Processing Succinct Matrices and Vectors

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    We study the complexity of algorithmic problems for matrices that are represented by multi-terminal decision diagrams (MTDD). These are a variant of ordered decision diagrams, where the terminal nodes are labeled with arbitrary elements of a semiring (instead of 0 and 1). A simple example shows that the product of two MTDD-represented matrices cannot be represented by an MTDD of polynomial size. To overcome this deficiency, we extended MTDDs to MTDD_+ by allowing componentwise symbolic addition of variables (of the same dimension) in rules. It is shown that accessing an entry, equality checking, matrix multiplication, and other basic matrix operations can be solved in polynomial time for MTDD_+-represented matrices. On the other hand, testing whether the determinant of a MTDD-represented matrix vanishes PSPACE$-complete, and the same problem is NP-complete for MTDD_+-represented diagonal matrices. Computing a specific entry in a product of MTDD-represented matrices is #P-complete.Comment: An extended abstract of this paper will appear in the Proceedings of CSR 201

    Do drugs interact together in cardiovascular prevention? A meta-analysis of powerful or factorial randomized controlled trials.

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    To explore whether preventive cardiovascular drugs (antihypertensive, antiplatelet, lipid lowering and hypoglycemic agents) interact together in cardiovascular prevention. We searched PubMed®, Web of science™, Embase and Cochrane library for powerful randomized placebo-controlled trials (>1000 patients). We explored whether drug effect on major vascular events changed according to cross-exposure to other drug classes or to cardiovascular risk factors (hypertension or type 2 diabetes), through a meta-analysis of relative odds ratio computed by trial subgroups. A significant interaction was suggested from confidence intervals of the ratio of odds ratios, when they excluded neutral value of 1. In total, 14 trials with 178,398 patients were included. No significant interaction was observed between co-prescribed drugs or between these medications and type 2 diabetes/hypertension status. Our meta-analysis is the first one to evaluate drug-drug and drug-hypertension/type 2 diabetes status interactions in terms of cardiovascular risks: we did not observe any significant interaction. This indirectly reinforces the rationale of using several contrasted mechanisms to address cardiovascular prevention; and allows the combination effect prediction by a simple multiplication of their odds ratios. The limited availability of data reported or obtained from authors is a strong argument in favor of data sharing
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