MoS₂ Transistors Fabricated <i>via</i> Plasma-Assisted Nanoprinting of Few-Layer MoS₂ Flakes into Large-Area Arrays

Large-area few-layer-MoS₂ device arrays are desirable for scale-up applications in nanoelectronics. Here we present a novel approach for producing orderly arranged, pristine few-layer MoS₂ flakes, which holds significant potential to be developed into a nanomanufacturing technology that can be scaled up. We pattern bulk MoS₂ stamps using lithographic techniques and subsequently transfer-print prepatterned MoS₂ features onto pristine and plasma-charged SiO₂ substrates. Our work successfully demonstrates the transfer printing of MoS₂ flakes into ordered arrays over cm²-scale areas. Especially, the MoS₂ patterns printed on plasma-charged substrates feature a regular edge profile and a narrow distribution of MoS₂ flake thicknesses (<i>i</i>.<i>e</i>., 3.0 ± 1.9 nm) over cm²-scale areas. Furthermore, we experimentally show that our plasma-assisted printing process can be generally used for producing other emerging atomically layered nanostructures (<i>e</i>.<i>g</i>., graphene nanoribbons). We also demonstrate working n-type transistors made from printed MoS₂ flakes that exhibit excellent properties (<i>e</i>.<i>g</i>., ON/OFF current ratio 10⁵–10⁷, field-effect mobility on SiO₂ gate dielectrics 6 to 44 cm²/(V s)) as well as good uniformity of such transistor parameters over a large area. Finally, with additional plasma treatment processes, we also show the feasibility of creation of p-type transistors as well as pn junctions in MoS₂ flakes. This work lays an important foundation for future scale-up nanoelectronic applications of few-layer-MoS₂ micro- and nanostructures