Quantitative modeling of \textit{in situ} x-ray reflectivity during organic molecule thin film growth

Synchrotron-based x-ray reflectivity is increasingly employed as an \textit{in situ} probe of surface morphology during thin film growth, but complete interpretation of the results requires modeling the growth process. Many models have been developed and employed for this purpose, yet no detailed, comparative studies of their scope and accuracy exists in the literature. Using experimental data obtained from hyperthermal deposition of pentane and diindenoperylene (DIP) on SiO$_2$, we compare and contrast three such models, both with each other and with detailed characterization of the surface morphology using ex-situ atomic force microscopy (AFM). These two systems each exhibit particular phenomena of broader interest: pentacene/SiO$_2$ exhibits a rapid transition from rough to smooth growth. DIP/SiO$_2$, under the conditions employed here, exhibits growth rate acceleration due to a different sticking probability between the substrate and film. In general, \textit{independent of which model is used}, we find good agreement between the surface morphology obtained from fits to the \insitu x-ray data with the actual morphology at early times. This agreement deteriorates at later time, once the root-mean squared (rms) film roughness exceeds about 1 ML. A second observation is that, because layer coverages are under-determined by the evolution of a single point on the reflectivity curve, we find that the best fits to reflectivity data --- corresponding to the lowest values of $\chi_\nu^2$ --- do not necessarily yield the best agreement between simulated and measured surface morphologies. Instead, it appears critical that the model reproduce all local extrema in the data. In addition to showing that layer morphologies can be extracted from a minimal set of data, the methodology established here provides a basis for improving models of multilayer growth by comparison to real systems.Comment: 34 pages (double-spaced, including figures and references), 10 figures, 3 appendice

Towards quantitative off-axis electron holographic mapping of the electric field around the tip of a sharp biased metallic needle

We apply off-axis electron holography and Lorentz microscopy in the transmission electron microscope to map the electric field generated by a sharp biased metallic tip. A combination of experimental data and modelling provides quantitative information about the potential and the field around the tip. Close to the tip apex, we measure a maximum field intensity of 82 MV/m, corresponding to a field k factor of 2.5, in excellent agreement with theory. In order to verify the validity of the measurements, we use the inferred charge density distribution in the tip region to generate simulated phase maps and Fresnel (out-of-focus) images for comparison with experimental measurements. While the overall agreement is excellent, the simulations also highlight the presence of an unexpected astigmatic contribution to the intensity in a highly defocused Fresnel image, which is thought to result from the geometry of the applied field