2,093 research outputs found

    Importance of charge capture in interphase regions during readout of charge-coupled devices

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    The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is negligible. However, simulation capabilities developed at the Centre for Electronic Imaging, which includes direct input of electron density simulations, have made it possible to investigate this assumption further. As part of the radiation testing campaign of the Euclid CCD273 devices, data have been obtained using the trap pumping method, a method that can be used to identify and characterize single defects within CCDs. Combining these data with simulations, we find that trapping during the transfer of charge among phases is indeed necessary to explain the results of the data analysis. This result could influence not only trap pumping theory and how trap pumping should be performed but also how a radiation-damaged CCD is readout in the most optimal way

    Proton irradiation of a swept charge device at cryogenic temperature and the subsequent annealing

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    A number of studies have demonstrated that a room temperature proton irradiation may not be sufficient to provide an accurate estimation of the impact of the space radiation environment on detector performance. This is a result of the relationship between defect mobility and temperature, causing the performance to vary subject to the temperature history of the device from the point at which it was irradiated. Results measured using Charge Coupled Devices (CCD) irradiated at room temperature therefore tend to differ from those taken when the device was irradiated at a cryogenic temperature, more appropriate considering the operating conditions in space, impacting the prediction of in-flight performance. This paper describes the cryogenic irradiation, and subsequent annealing of an e2v technologies Swept Charge Device (SCD) CCD236 irradiated at āˆ’35.4Ā°C with a 10 MeV equivalent proton fluence of 5.0 Ɨ 108 protons centerdot cmāˆ’2. The CCD236 is a large area (4.4 cm2) X-ray detector that will be flown on-board the Chandrayaan-2 and Hard X-ray Modulation Telescope spacecraft, in the Chandrayaan-2 Large Area Soft X-ray Spectrometer and the Soft X-ray Detector respectively. The SCD is readout continually in order to benefit from intrinsic dither mode clocking, leading to suppression of the surface component of the dark current and allowing the detector to be operated at warmer temperatures than a conventional CCD. The SCD is therefore an excellent choice to test and demonstrate the variation in the impact of irradiation at cryogenic temperatures in comparison to a more typical room temperature irradiation

    Metabolism impacts upon Candida immunogenicity and pathogenicity at multiple levels

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    Copyright Ā© 2014 The Authors. Published by Elsevier Ltd.. All rights reserved. Open Access funded by Wellcome TrustNon peer reviewedPublisher PD

    Postirradiation behavior of p-channel charge-coupled devices irradiated at 153 K

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    The displacement damage hardness that can be achieved using p-channel charge-coupled devices (CCD) was originally demonstrated in 1997, and since then a number of other studies have demonstrated an improved tolerance to radiation-induced CTI when compared to n-channel CCDs. A number of recent studies have also shown that the temperature history of the device after the irradiation impacts the performance of the detector, linked to the mobility of defects at different temperatures. This study describes the initial results from an e2v technologies p-channel CCD204 irradiated at 153 K with a 10 MeV equivalent proton fluences of 1.24Ɨ109 and 1.24Ɨ1011 protons cm-2. The dark current, cosmetic quality and the number of defects identified using trap pumping immediately were monitored after the irradiation for a period of 150 hours with the device held at 153 K and then after different periods of time at room temperature. The device also exhibited a flatband voltage shift of around 30 mV / krad, determined by the reduction in full well capacity

    Semi-quantitative, duplexed qPCR assay for the detection of leishmania spp. using bisulphite conversion technology

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    Ā© 2019 by the authors. Leishmaniasis is caused by the flagellated protozoan Leishmania, and is a neglected tropical disease (NTD), as defined by theWorld Health Organisation (WHO). Bisulphite conversion technology converts all genomic material to a simplified form during the lysis step of the nucleic acid extraction process, and increases the efficiency of multiplex quantitative polymerase chain reaction (qPCR) reactions. Through utilization of qPCR real-time probes, in conjunction with bisulphite conversion, a new duplex assay targeting the 18S rDNA gene region was designed to detect all Leishmania species. The assay was validated against previously extracted DNA, from seven quantitated DNA and cell standards for pan-Leishmania analytical sensitivity data, and 67 cutaneous clinical samples for cutaneous clinical sensitivity data. Specificity was evaluated by testing 76 negative clinical samples and 43 bacterial, viral, protozoan and fungal species. The assay was also trialed in a side-by-side experiment against a conventional PCR (cPCR), based on the Internal transcribed spacer region 1 (ITS1 region). Ninety-seven percent of specimens from patients that previously tested positive for Leishmania were positive for Leishmania spp. with the bisulphite conversion assay, and a limit of detection (LOD) of 10 copies per PCR was achieved, while the LOD of the ITS1 methodology was 10 cells/1000 genomic copies per PCR. This method of rapid, accurate and simple detection of Leishmania can lead to improved diagnosis, treatment and public health outcomes

    Evolution and impact of defects in a p-channel CCD after cryogenic proton-irradiation

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    P-channel CCDs have been shown to display improved tolerance to radiation-induced charge transfer inefficiency (CTI) when compared to n-channel CCDs. However, the defect distribution formed during irradiation is expected to be temperature dependent due to the differences in lattice energy caused by a temperature change. This has been tested through defect analysis of two p-channel e2v CCD204 devices, one irradiated at room temperature and one at a cryogenic temperature (153K). Analysis is performed using the method of single trap pumping. The dominant charge trapping defects at these conditions have been identified as the donor level of the silicon divacancy and the carbon interstitial defect. The defect parameters are analysed both immediately post irradiation and following several subsequent room-temperature anneal phases up until a cumulative anneal time of approximately 10 months. We have also simulated charge transfer in an irradiated CCD pixel using the defect distribution from both the room-temperature and cryogenic case, to study how the changes affect imaging performance. The results demonstrate the importance of cryogenic irradiation and annealing studies, with large variations seen in the defect distribution when compared to a device irradiated at room-temperature, which is the current standard procedure for radiation-tolerance testing

    Proton radiation damage study of the next generation of swept charge devices

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    The first generation of Swept Charge Device (SCD) the e2v technologies plc CCD54 was used in the Demonstration of a Compact Imaging X-ray Spectrometer (D-CIXS) launched in 2003 and again in the Chandrayaan-1 X-ray Spectrometer (C1XS) instrument currently in orbit around the Moon. The main source of decreased energy resolution in both cases is proton damage, from trapped and solar protons respectively. This paper presents the results from an experimental study to evaluate the performance of the next generation of SCD the CCD234 and CCD236 irradiated with a 10 MeV equivalent proton fluence of 3.0?108 protons.cm-2, demonstrating the factor of two increase in radiation hardness when compared to the CCD54. In particular the increased dark current, decrease in energy resolution and the degradation of charge transfer efficiency (CTE) are described

    Learning on a Budget via Teacher Imitation

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    Deep Reinforcement Learning (RL) techniques can benefit greatly from leveraging prior experience, which can be either self-generated or acquired from other entities. Action advising is a framework that provides a flexible way to transfer such knowledge in the form of actions between teacher-student peers. However, due to the realistic concerns, the number of these interactions is limited with a budget; therefore, it is crucial to perform these in the most appropriate moments. There have been several promising studies recently that address this problem setting especially from the student's perspective. Despite their success, they have some shortcomings when it comes to the practical applicability and integrity as an overall solution to the learning from advice challenge. In this paper, we extend the idea of advice reusing via teacher imitation to construct a unified approach that addresses both advice collection and advice utilisation problems. We also propose a method to automatically tune the relevant hyperparameters of these components on-the-fly to make it able to adapt to any task with minimal human intervention. The experiments we performed in 5 different Atari games verify that our algorithm either surpasses or performs on-par with its top competitors while being far simpler to be employed. Furthermore, its individual components are also found to be providing significant advantages alone

    A study of the double-acceptor level of the silicon divacancy in a proton irradiated n-channel CCD

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    Radiation damage effects are problematic for space-based detectors. Highly energetic particles, predominantly from the sun can damage a detector and reduce its operational lifetime. For an image sensor such as a Charge-Coupled Device (CCD) impinging particles can potentially displace silicon atoms from the CCD lattice, creating defects which can trap signal charge and degrade an image through smearing. This paper presents a study of one energy level of the silicon divacancy defect using the technique of single trap-pumping on a proton irradiated n-channel CCD. The technique allows for the study of individual defects at a sub-pixel level, providing highly accurate data on defect parameters. Of particular importance when concerned with CCD performance is the emission time-constant of a defect level, which is the time-scale for which it can trap a signal charge. The trap-pumping technique is a direct probe of individual defect emission time-constants in a CCD, allowing for them to be studied with greater precision than possible with other defect analysis techniques such as deep-level transient spectroscopy on representative materials
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