Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment

Fluorine negative ion detachment kinetics

A study of the rate of F(-) detachment by O and H atoms via the reactions F(-) + O yields FO + e and F(-) + H yields FH+ e was undertaken using a drift tube to produce F(-) ions at various drift velocities and therefore different ion temperatures. Preliminary mobility measurements of F(-) ions in Ar were made, indicating that ion temperatures in the 300 K to 5000 K range could be achieved; however due to numerous difficulties experienced in obtaining a reliable F(-) ion source, the study could not be completed

Generalised Perk--Schultz models: solutions of the Yang-Baxter equation associated with quantised orthosymplectic superalgebras

The Perk--Schultz model may be expressed in terms of the solution of the Yang--Baxter equation associated with the fundamental representation of the untwisted affine extension of the general linear quantum superalgebra $U_q[sl(m|n)]$, with a multiparametric co-product action as given by Reshetikhin. Here we present analogous explicit expressions for solutions of the Yang-Baxter equation associated with the fundamental representations of the twisted and untwisted affine extensions of the orthosymplectic quantum superalgebras $U_q[osp(m|n)]$. In this manner we obtain generalisations of the Perk--Schultz model.Comment: 10 pages, 2 figure

Resonance Cones in the Field Pattern of a Radio Frequency Probe in a Warm Anisotropic Plasma

An experimental and theoretical investigation of the angular distribution of the electric field of a short radio frequency probe in a plasma in a magnetic field is described. The field is observed to become very large along a resonance cone whose axis is parallel to the static magnetic field and whose opening angle is observed to vary with incident probe frequency, cyclotron frequency, and plasma frequency in agreement with simple cold plasma dielectric theory. The relationship of these cones to the limiting phase- and group-velocity cones which appear in the theory of plane wave propagation is discussed. The addition of electron thermal velocities (warm plasma effects) is examined in the limit of a large static magnetic field. A fine structure appears inside the cones and is shown to result from an interference between a fast electromagnetic wave and a slow plasma wave. This interference structure is observed experimentally and measurements of the angular interference spacing are shown to agree with the warm plasma theory. The use of measurements of the resonance cones and structure as a diagnostic tool to determine the plasma density and electron temperature in a plasma in a magnetic field is discussed

Fully electrically read-write device out of a ferromagnetic semiconductor

We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.Comment: 4 pages, 4 figure

Bound hole states in a ferromagnetic (Ga,Mn)As environment

A numerical technique is developed to solve the Luttinger-Kohn equation for impurity states directly in k-space and is applied to calculate bound hole wave functions in a ferromagnetic (Ga,Mn)As host. The rich properties of the band structure of an arbitrarily strained, ferromagnetic zinc-blende semiconductor yields various features which have direct impact on the detailed shape of a valence band hole bound to an active impurity. The role of strain is discussed on the basis of explicit calculations of bound hole states.Comment: 9 pages, 10 figure