Zeeman Effect of an Induced Absorption Line in Highly Excited CuCl(Physics)

Zeeman effect is studied for a narrow absorption line at 390.89 nm in CuCl crystal induced by a nitrogen laser excitation, the appearance of which was reported previously as a possible evidence for the Bose condensation of excitons. From the Zeeman splitting, it is concluded that this absorption corresponds to the formation of an exciton bound to a transiently generated neutral donor

サンカ ダイ1 ドウ ノ オルソ レイキシ ノ 1S ジュンイ ニ キョウメイ シタ ダイ2 コウチョウハ ハッセイ

The electric-quadrupole second-harmonic (SH) signal resonant to 1S yellow orthoexciton in Cu2O is observed. SH signals for the polycrystalline and the single crystal have been investigated. The polarization property of the SH signal has also been studied. The enhanced resonant SH signal can be ascribed to the small damping constant of the electric-quadrupole transition of the orthoexciton. The polarization properties of the SH signal are explained in terms of the energy consideration of the nonlinear optical properties of solids proposed by Pershan. In addition, resonant hyper-Raman scattering of the Γ12- phonon is also observed.Cu2Oの1S オルソ励起子に共鳴した電気四重極第2高調波シグナルを観測した。オルソ励起子準位のダンピングエネルギーが小さいため、鋭い共鳴が生じる。共鳴スペクトルの偏光特性がPershanの理論によって説明できることが分かった

Optical Properties of CdTe Microcrystallites in CaF_2

Using pulsed laser beam and electron beam coevaporation method, we have embedded CdTe microcrystallites into CaF_2 thin film in a highly based vacuum chamber. Nanometer scale CdTe particles are observed in the thin film with transmission electron micrographs. The blue shifts of the absorption bands and the corresponding shifts of photoluminescence bands are obtained. And the broadened optical phonon Raman structure and low wave number acoustic phonon structure are also obtained. These results are considered to be size effect of the CdTe microcrystallites

Vibrational Modes of C_<60> Fullerene Adsorbed on Si(100)2×1 Surface Studied by High-Resolution Electron-Energy-Loss Spectroscopy

We have measured the inelastic electron-energy-loss spectra of C_ on the Si(100)2x1 surface in the infra-red energy range. If C_ is evaporated 5Å (approximately half a monolayer) on Si(100), a strong energy loss peak appears at 65 meV, and weak peaks and shoulders at 72, 144, and 175 meV. In the 12Å thick film, additional weak peaks at 96, 160, and 189 meV become more apparent. Intensities of these peaks are comparable to those of thick films measured by infra-red absorption and by Raman scattering spectroscopies. Moreover, we have measured the angle dependence of the inelastic electron intensity. These results suggest appreciable interactions between C_ and the dangling bonds of Si surface

Multiple-Phonon Scattering Mechanism in the Exciton Region of HgI_2(Excitons and Phonons)

Multiple-phonon structure has been observed in both the Raman spectrum in the exciton region and the excitation spectrum for the phonon-assisted free exciton emission of a layer semiconductor, red-HgI_2. The associated longitudinal phonon has symmetry E. Two dimensionality in its dispersion contributes to the large cross section for the multiple-phonon scattering. The multiple-phonon structure observed in the Raman spectrum suggests that the initial state for the resonant Raman scattering is given not only by the polariton state but also by the hot exciton state